公开(公告)号：US20200003627A1

公开(公告)日：2020-01-02

申请号：US16566643

申请日：2019-09-10

Applicant: FUJIFILM Corporation

Inventor： Takamichi FUJII

IPC: G01J5/34 ,  G01J1/04 ,  H01L41/187 ,  G01J5/08

Abstract: Provided is a pyroelectric sensor including: an Si substrate; a laminated portion in which a heat absorption layer formed of an inorganic material, a lower electrode, a piezoelectric film, and an upper electrode are laminated in this order from one surface side of the Si substrate on the one surface; and an optical filter that is provided at a position of the other surface of the Si substrate corresponding to the laminated portion and selectively transmits an infrared ray, in which an infrared ray incident to the laminated portion from the optical filter side through the Si substrate is sensed.

公开(公告)号：US20190214541A1

公开(公告)日：2019-07-11

申请号：US16352770

申请日：2019-03-13

Applicant: FUJIFILM Corporation

Inventor： Takamichi FUJII ,  Takayuki NAONO

IPC: H01L41/083 ,  H01L41/27 ,  H01L41/08 ,  B81C1/00 ,  B06B1/06 ,  H01L41/316 ,  H01L41/047 ,  H01L41/09 ,  H01L41/297

CPC classification number: H01L41/083 ,  B06B1/0611 ,  B81C1/00158 ,  H01L41/0471 ,  H01L41/0478 ,  H01L41/0805 ,  H01L41/0831 ,  H01L41/094 ,  H01L41/0973 ,  H01L41/27 ,  H01L41/297 ,  H01L41/316

Abstract: Provided are a piezoelectric element having high stability, which operates with high efficiency, and a method for manufacturing the piezoelectric element. The piezoelectric element (10) has a laminate structure in which a first electrode (14), a first piezoelectric film (16), a second electrode (18), an adhesion layer (20), an interlayer (22), a third electrode (24), a second piezoelectric film (26), and a fourth electrode (28) are laminated in this order on a silicon substrate (12). The interlayer (22) is formed of a material different from that of the second electrode (18) and has a thickness of 0.4 μm to 10 μm. A device having a diaphragm structure or a cantilever structure is formed by removing a part of the silicon substrate (12). The respective layers (14 to 28) laminated on the silicon substrate (12) can be formed using a thin film formation method represented by a vapor phase epitaxial method.

公开(公告)号：US20180254406A1

公开(公告)日：2018-09-06

申请号：US15968522

申请日：2018-05-01

Applicant: FUJIFILM Corporation

Inventor： Naoki MURAKAMI ,  Takamichi FUJII ,  Takami ARAKAWA

IPC: H01L41/187 ,  B41J2/14 ,  B41J2/175 ,  H01L41/09

CPC classification number: H01L41/1876 ,  B41J2/14 ,  B41J2/14233 ,  B41J2/175 ,  B41J2202/03 ,  B41J2202/21 ,  H01L41/09 ,  H01L41/187

Abstract: The piezoelectric film includes a perovskite oxide which is represented by General Formula P, A1+δB1-x-yNbxNiyOz  General Formula P where A contains at least Pb, B contains at least Zr and Ti, and x and y respectively satisfy 0.1≤x≤0.3 and 0≤y≤0.75x. Although standard values of δ and z are δ=0 and z=3, these values may deviate from the standard values in a range in which a perovskite structure is capable of being obtained.

公开(公告)号：US20180123017A1

公开(公告)日：2018-05-03

申请号：US15846258

申请日：2017-12-19

Applicant: FUJIFILM Corporation

Inventor： Takamichi FUJII ,  Takayuki NAONO

IPC: H01L41/187 ,  H01L41/316 ,  H01L41/08 ,  H01L41/09

CPC classification number: H01L41/187 ,  H01L41/0805 ,  H01L41/09 ,  H01L41/094 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/313 ,  H01L41/316

Abstract: A piezoelectric element is obtained using a method including: preparing a first structure; preparing a second structure; disposing a first facing electrode layer of the first structure to face a first surface of a vibration plate substrate and bonding the first structure to the first surface of the vibration plate substrate; processing the vibration plate substrate into a vibration plate by polishing or etching a second surface of the vibration plate substrate to which the first structure is bonded; preparing a laminate structure by disposing a second facing electrode layer of the second structure to face an exposed surface of the vibration plate and bonding the second structure to the vibration plate; and removing at least a part of a first silicon substrate of the first structure and a second silicon substrate of the second structure from the laminate structure.

公开(公告)号：US20160027996A1

公开(公告)日：2016-01-28

申请号：US14871339

申请日：2015-09-30

Applicant: FUJIFILM Corporation

Inventor： Takamichi FUJII ,  Akihiro MUKAIYAMA

IPC: H01L41/332 ,  H01L41/29

CPC classification number: H01L41/332 ,  H01L41/0477 ,  H01L41/1875 ,  H01L41/1876 ,  H01L41/29

Abstract: In a method for etching a piezoelectric film and a manufacturing method thereof, a piezoelectric film is formed on a substrate on which a lower electrode is formed, a metal film having a thickness of 20 nm to 300 nm is formed, a patterned resist film is formed, the metal film is etched with a first etchant to which the piezoelectric film has etching resistance, and the piezoelectric film is etched with a second etchant to which the metal film has etching resistance.

Abstract translation: 在蚀刻压电膜的方法及其制造方法中，在形成有下电极的基板上形成压电膜，形成厚度为20nm〜300nm的金属膜，图案化抗蚀剂膜为 形成的金属膜用压电膜具有耐腐蚀性的第一蚀刻剂进行蚀刻，并用第二蚀刻剂蚀刻压电膜，金属膜具有耐蚀刻性。

公开(公告)号：US20130300254A1

公开(公告)日：2013-11-14

申请号：US13837420

申请日：2013-03-15

Applicant: FUJIFILM CORPORATION

Inventor： Takamichi FUJII ,  Akihiro MUKAIYAMA

IPC: H01L41/047 ,  H01L41/33

CPC classification number: H01L41/047 ,  G01C19/5663 ,  H01L41/0475 ,  H01L41/0477 ,  H01L41/0805 ,  H01L41/1876 ,  H01L41/29 ,  H01L41/316 ,  H01L41/33 ,  Y10T29/42

Abstract: A piezoelectric device includes: a substrate; a lower electrode provided on a substrate; a piezoelectric film provided by being laminated on the lower electrode, the piezoelectric film being formed of lead zirconate titanate (PZT) containing 6 at % or more in atomic composition percentage of at least one type of metal element selected from V group and VI group; an oxide electrode layer provided by being laminated on the piezoelectric film; a first metal electrode layer containing an oxidation-resistant precious metal provided by being laminated on the oxide electrode layer; a second metal electrode layer provided by being laminated on the first metal electrode layer; and a wire connected to the second metal electrode layer.

Abstract translation: 压电装置包括：基板; 设置在基板上的下电极; 通过层压在下电极上的压电膜，所述压电膜由选自V族和VI族的至少一种金属元素的原子组成百分比含有6原子％以上的钛酸铅钛酸铅（PZT）形成; 通过层压在压电膜上而提供的氧化物电极层; 含有通过层压在所述氧化物电极层上而提供的抗氧化性贵金属的第一金属电极层; 通过层叠在第一金属电极层上而形成的第二金属电极层; 以及连接到第二金属电极层的导线。

公开(公告)号：US20140083971A1

公开(公告)日：2014-03-27

申请号：US14030985

申请日：2013-09-18

Applicant: FUJIFILM CORPORATION

Inventor： Takamichi FUJII ,  Akihiro MUKAIYAMA

IPC: H01L41/332

CPC classification number: H01L41/332 ,  C09K13/08 ,  H01L41/0477 ,  H01L41/1876

Abstract: The present invention provides an etching solution for etching a piezoelectric film having a thin film of a perovskite structure grown to be a columnar structure on a lower electrode formed on a substrate and having a pyrochlore layer at an interface thereof with the lower electrode, wherein the etching solution comprises at least: a hydrofluoric acid type chemical comprising at least any of buffered hydrofluoric acid (BHF), hydrogen fluoride (HF), and diluted hydrofluoric acid (DHF); and nitric acid, and has a concentration by weight of hydrochloric acid of less than 10% and a weight ratio of hydrochloric acid to nitric acid (hydrochloric acid/nitric acid) of 1/4 or less. The present invention also provides a method of manufacturing a piezoelectric element to carry out etching using the etching solution.

Abstract translation: 本发明提供了一种蚀刻溶液，用于蚀刻具有在基板上形成的下电极上形成为柱状结构的钙钛矿型结构的薄膜的压电膜，并在其与下电极的界面处具有烧绿石层，其中， 蚀刻溶液至少包括：包含缓冲氢氟酸（BHF），氟化氢（HF）和稀释氢氟酸（DHF）中的至少任一种的氢氟酸型化学品; 和硝酸，盐酸浓度小于10％，盐酸与硝酸（盐酸/硝酸）的重量比为1/4以下。 本发明还提供一种制造压电元件以使用蚀刻溶液进行蚀刻的方法。

公开(公告)号：US20130099627A1

公开(公告)日：2013-04-25

申请号：US13644178

申请日：2012-10-03

Applicant: FUJIFILM Corporation

Inventor： Takamichi FUJII ,  Yoshikazu HISHINUMA

IPC: H01L41/08 ,  H01L41/277 ,  H01L41/04

CPC classification number: H01L41/0805 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1628 ,  B41J2/1642 ,  B41J2/1646 ,  B41J2002/14258 ,  B41J2202/03 ,  H01L41/04 ,  H01L41/0471 ,  H01L41/0477 ,  H01L41/0973 ,  H01L41/277 ,  H01L41/297 ,  H01L41/316

Abstract: A piezoelectric device includes: a substrate; a first electrode which is layered over the substrate; a first piezoelectric film which is layered over the first electrode; a metal oxide film which is layered over the first piezoelectric film; a metal film which is layered over the metal oxide film; a second piezoelectric film which is layered over the metal film; and a second electrode which is layered over the second piezoelectric film.

Abstract translation: 压电装置包括：基板; 层叠在所述基板上的第一电极; 层叠在第一电极上的第一压电膜; 层叠在第一压电膜上的金属氧化物膜; 层叠在金属氧化物膜上的金属膜; 层叠在金属膜上的第二压电膜; 以及层叠在第二压电膜上的第二电极。

公开(公告)号：US20200235284A1

公开(公告)日：2020-07-23

申请号：US16841703

申请日：2020-04-07

Applicant: FUJIFILM CORPORATION

Inventor： Takamichi FUJII ,  Kenichi UMEDA

IPC: H01L41/338 ,  H01L41/053 ,  H01L41/113 ,  H02N2/18 ,  H01L41/047 ,  H01L41/31

Abstract: A method of manufacturing a power generation element includes a first step of disposing a support unit that supports a vibration unit in one end portion of the vibration unit in one direction, and disposing a weight unit in the other end portion of the vibration unit in the one direction in a substrate including the vibration unit capable of vibrating, a second step of disposing a piezoelectric unit that generates power due to vibration in a portion of the vibration unit on an opposite side from the support unit side in a thickness direction of the substrate after the support unit and the weight unit are disposed in the vibration unit, and a third step of extracting a power generation element from the substrate by cutting an outer edge of the vibration unit in the thickness direction of the substrate after the piezoelectric unit is disposed in the vibration unit.

公开(公告)号：US20170186936A1

公开(公告)日：2017-06-29

申请号：US15460616

申请日：2017-03-16

Applicant: FUJIFILM Corporation

Inventor： Takamichi FUJII ,  Takehiro KASAHARA

IPC: H01L41/047 ,  H01L41/45 ,  H01L41/18 ,  H01L41/29 ,  B41J2/16 ,  C23C14/08

CPC classification number: H01L41/0477 ,  B41J2/14233 ,  B41J2/1607 ,  B41J2/161 ,  B41J2/1628 ,  B41J2/1646 ,  B41J2202/03 ,  B41J2202/21 ,  C04B35/493 ,  C04B2235/3251 ,  C04B2235/768 ,  C04B2235/79 ,  C23C14/025 ,  C23C14/08 ,  C23C14/088 ,  C23C14/34 ,  H01L41/0815 ,  H01L41/0973 ,  H01L41/18 ,  H01L41/1876 ,  H01L41/29 ,  H01L41/316 ,  H01L41/319 ,  H01L41/45

Abstract: A piezoelectric element includes: a titanium-containing adhesion layer, a lower electrode, a PZT-based piezoelectric film, and an upper electrode, which are sequentially provided on a silicon substrate, in which the lower electrode includes a columnar structure film consisting of a large number of columnar crystals which are grown from a surface of the titanium-containing adhesion layer and have a platinum group element as a primary component, and an adhesion layer component diffused from the titanium containing adhesion layer and oxygen diffused from the piezoelectric film side, which are present in the columnar structure film, and a main column diameter of the columnar crystal of the columnar structure film is 50 nm or more and 200 nm or less.