Abstract:
An object of the present invention is to provide a compound which, when used for organic semiconductor films in organic thin-film transistors, makes the organic thin-film transistors exhibit a high carrier mobility, a material for an organic thin-film transistor for which the compound is used, a composition for an organic thin-film transistor, an organic thin-film transistor and a method for manufacturing the same, and an organic semiconductor film.An organic thin-film transistor of the present invention contains a compound represented by General Formula (1) in an organic semiconductor film (organic semiconductor layer) thereof.
Abstract:
An electroconductive-film-forming composition capable of forming an electroconductive film having excellent conductivity and few voids and a method for producing an electroconductive film using the same. The electroconductive-film-forming composition contains copper particles having an average particle diameter of 1 nm to 10 copper oxide particles having an average particle diameter of 1 nm to 500 nm, a reducing agent having a hydroxy group, a metal catalyst including metals other than copper, and a solvent, in which the content of the copper oxide particles is 50% by mass to 300% by mass with respect to the content of the copper particles, the content of the reducing agent is 100 mol % to 800 mol % with respect to the content of the copper oxide particles, and the content of the metal catalyst is 10% by mass or less with respect to the content of the copper oxide particles.
Abstract:
Provided are an organic transistor with high carrier mobility having a semiconductor active layer containing a compound which is represented by the following formula and has a molecular weight of equal to or less than 3,000, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a coating solution for a non-light-emitting organic semiconductor device, a method for manufacturing an organic transistor, a method for manufacturing an organic semiconductor film, an organic semiconductor film for a non-light-emitting organic semiconductor device, and a method for manufacturing an organic semiconductor material. (X represents an oxygen, sulfur, selenium, or tellurium atom or NR5; Y and Z each represents CR6, an oxygen, sulfur, selenium, or nitrogen atom, or NR7; a ring containing Y and Z is an aromatic heterocycle; any one of R1 and R2 and the aromatic heterocycle containing Y and Z or any one of R3 and R4 and a benzene ring may be bonded to each other through a specific divalent linking group; R1, R2, and R5 to R8 each represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group; R3 and R4 each represent an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or heteroaryl group; and each of m and n is an integer of 0 to 2).
Abstract:
A composition includes a near infrared absorbing pigment, a compound represented by Formula (1), a primary to tertiary amine compound having a molecular weight of 500 or less and a boiling point of 300° C. or lower, a resin, and a solvent. The compound represented by Formula (1) has a solubility in propylene glycol methyl ether acetate at 25° C. of 0.1 g/L or higher. A content of the amine compound in a total solid content of the composition is 10-5000 mass ppm. In Formula (1), P1 represents a colorant structure, L1 represents a single bond or a linking group, X1 represents an acid group, a basic group, a group having a salt structure, or a phthalimide methyl group, m is 1 or more, and n is 1 or more. P1L1-(X1)n)m (1)
Abstract:
An object of the present invention is to provide a method for producing a peptide with high efficiency, which is capable of deprotecting a protective group in a side chain with a weak acid; a protective group-forming reagent having excellent deprotective properties; and a compound. According to the present invention, there is provided a method for producing a peptide, including a peptide chain extending step of reacting a first amino acid or peptide in which a side chain is protected with a first protective group represented by Formula (1) with a second amino acid or peptide to obtain a third amino acid or peptide, and a first deprotecting step of deprotecting the first protective group of the third amino acid or peptide, in which, in the first deprotecting step, the deprotection is performed using a deprotection solution having a trifluoroacetic acid content of 10% by mass or less. In the formula, R11 is an aryl group having a substituent, R21 and R22 are each independently a hydrogen atom or a substituent, and n is an integer of 1 to 6.
Abstract:
A photopolymerization initiator which is a compound having a structure in which one or more carbonyl groups that link to a carbon atom are further directly bonded to an aromatic ring of an aromatic acyl group that bonds to a phosphorus atom in an acylphosphine oxide structure. A producing method of a photopolymerization initiator produces the photopolymerization initiator. In a polymerizable composition and an ink jet recording method, the photopolymerization initiator is used. Furthermore, an acylphosphine oxide compound has a partial structure represented by Formula 1 or Formula 2.
Abstract:
A photopolymerization initiator which is a compound having a structure in which one or more carbonyl groups that link to a carbon atom are further directly bonded to an aromatic ring of an aromatic acyl group that bonds to a phosphorus atom in an acylphosphine oxide structure. A producing method of a photopolymerization initiator produces the photopolymerization initiator. In a polymerizable composition and an ink jet recording method, the photopolymerization initiator is used. Furthermore, an acylphosphine oxide compound has a partial structure represented by Formula 1 or Formula 2.
Abstract:
An acylphosphine oxide compound represented by Formula 1-1 or Formula 2-1 which can be used as a photopolymerization initiator. In Formula 1-1 and Formula 2-1, A represents an m-valent group, L's each independently represent a single bond or a divalent linking group, R1's each independently represent an alkyl group having 1 to 8 carbon atoms, an aryl group having 6 to 20 carbon atoms, or an alkoxy group having 1 to 4 carbon atoms, R2 and R3 each independently represent an alkyl group, an aryl group, or an alkoxy group, m represents an integer of 3 or more, n1's each independently represent an integer of 0 to 4, and n2's each independently represent an integer of 0 to 5.
Abstract:
An object of the present invention is to provide an organic thin film transistor having excellent carrier mobility and excellent atmospheric stability, a novel compound, an organic thin film transistor material, an organic semiconductor film, an organic thin film transistor composition, and a method of manufacturing an organic thin film transistor using this. The organic thin film transistor according to the present invention has an organic semiconductor film containing a compound represented by Formula (1) or (2).
Abstract:
Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.)