公开(公告)号：US20240287408A1

公开(公告)日：2024-08-29

申请号：US18647489

申请日：2024-04-26

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA ,  Naoko OUCHI ,  Shimpei YAMADA

IPC: C11D1/90 ,  C11D3/20 ,  C11D3/24 ,  C11D3/30 ,  C11D3/34 ,  C11D3/48

CPC classification number: C11D1/90 ,  C11D3/2034 ,  C11D3/2044 ,  C11D3/2079 ,  C11D3/2082 ,  C11D3/2086 ,  C11D3/24 ,  C11D3/30 ,  C11D3/3481 ,  C11D3/48

Abstract: An object of the present invention is to provide a treatment liquid for a semiconductor substrate, which has excellent storage stability, excellent anticorrosion properties of tungsten, and excellent cleanability for a semiconductor substrate having tungsten after a CMP treatment. The treatment liquid for a semiconductor substrate according to an embodiment of the present invention includes an amphoteric compound, an antimicrobial agent, and an amino alcohol, in which the amphoteric compound includes an acid group having a pKa of less than 4.5 and a basic group having a pKa of more than 4.5, and the number of the basic groups is larger than the number of the acid groups.

公开(公告)号：US20250019623A1

公开(公告)日：2025-01-16

申请号：US18892835

申请日：2024-09-23

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA ,  Shimpei YAMADA

IPC: C11D7/26 ,  C11D7/32 ,  H01L21/02

Abstract: An object of the present invention is to provide a cleaning composition that suppresses a surface roughness of a region including Mo and has excellent removability of Mo-based residues in a case of being used in a treatment of an Mo-containing substrate. The cleaning composition of an embodiment of the present invention is a cleaning composition used in a treatment of a molybdenum-containing substrate, the cleaning composition including an organic acid and organic amine compounds having at least one group selected from the group consisting of a primary amino group, a secondary amino group, and a tertiary amino group, in which the cleaning composition includes two or more kinds of the organic amine compounds.

公开(公告)号：US20240026254A1

公开(公告)日：2024-01-25

申请号：US18356507

申请日：2023-07-21

Applicant: FUJIFILM Corporation

Inventor： Shimpei YAMADA ,  Tetsuya KAMIMURA ,  Naoko OUCHI ,  Naotsugu MURO ,  Nobuaki SUGIMURA ,  Yuta SHIGENOI

IPC: C11D11/00 ,  C11D3/30 ,  C11D3/20

CPC classification number: C11D11/0047 ,  C11D3/30 ,  C11D3/2096 ,  H01L21/02065

Abstract: An object of the present invention is to provide a cleaning liquid for a semiconductor substrate, which has excellent cleaning performance and excellent ruthenium oxide dissolving ability in a case of being applied as a cleaning liquid after a CMP treatment of a semiconductor substrate including a metal film. A cleaning liquid for a semiconductor substrate according to the present invention is a cleaning liquid for a semiconductor substrate, which is used for cleaning a semiconductor substrate, where the cleaning liquid contains at least one purine compound selected from the group consisting of purine and a purine derivative and a compound represented by Formula (A).