公开(公告)号：US10988636B2

公开(公告)日：2021-04-27

申请号：US16535570

申请日：2019-08-08

Applicant: FUJIMI INCORPORATED

Inventor： Toshio Shinoda ,  Aya Nishimura

IPC: C09G1/02 ,  H01L21/321 ,  H01L21/306

Abstract: To provide a polishing composition capable of polishing an object to be polished containing a silicon nitride film at a high polishing removal rate and reducing the particle residual amount on the object to be polished and a method for manufacturing the same, a polishing method, and a method for manufacturing a substrate.
A polishing composition is a polishing composition containing abrasives, an anionic surfactant, and a dispersion medium, in which the anionic surfactant has at least one kind of acidic functional group selected from the group consisting of a sulfo group, a phosphate group, and a phosphonic acid group and a polyoxyalkylene group and the pH is less than 7 and which is used for polishing an object to be polished containing a silicon nitride film.

公开(公告)号：US20200048497A1

公开(公告)日：2020-02-13

申请号：US16535570

申请日：2019-08-08

Applicant: FUJIMI INCORPORATED

Inventor： Toshio Shinoda ,  Aya Nishimura

IPC: C09G1/02 ,  H01L21/321

Abstract: To provide a polishing composition capable of polishing an object to be polished containing a silicon nitride film at a high polishing removal rate and reducing the particle residual amount on the object to be polished and a method for manufacturing the same, a polishing method, and a method for manufacturing a substrate.A polishing composition is a polishing composition containing abrasives, an anionic surfactant, and a dispersion medium, in which the anionic surfactant has at least one kind of acidic functional group selected from the group consisting of a sulfo group, a phosphate group, and a phosphonic acid group and a polyoxyalkylene group and the pH is less than 7 and which is used for polishing an object to be polished containing a silicon nitride film.