公开(公告)号：US20150111382A1

公开(公告)日：2015-04-23

申请号：US14394412

申请日：2013-04-10

Applicant: FUJIMI INCORPORATED

Inventor： Toshio Shinoda

IPC: C09G1/02 ,  H01L21/306

CPC classification number: C09G1/02 ,  B24B37/042 ,  C09K3/1463 ,  H01L21/30625

Abstract: Provided is a polishing composition used for polishing a semiconductor substrate having a through-silicon via structure, comprising an oxidizing agent having a standard electrode potential of 350 mV or more and 740 mV or less, a silicon polishing accelerating agent, a through-silicon via material polishing speed increasing agent, a silicon contamination preventing agent, and water.

Abstract translation: 本发明提供一种抛光组合物，其用于研磨具有贯通硅通孔结构的半导体衬底，该半导体衬底包括标准电极电位为350mV以上且740mV以下的氧化剂，硅研磨促进剂，通过硅通孔 材料抛光加速剂，硅污染防止剂和水。

公开(公告)号：US12221557B2

公开(公告)日：2025-02-11

申请号：US17679415

申请日：2022-02-24

Applicant: FUJIMI INCORPORATED

Inventor： Daiki Ito ,  Toshio Shinoda

IPC: C09G1/02 ,  C09G1/18 ,  H01L21/306

Abstract: There is provided a polishing composition capable of improving the polishing removal rate of silicon nitride to polish silicon oxide and silicon nitride at the same polishing removal rate and polishing silicon nitride with a small number of defects.
A polishing composition contains: abrasives having a positive zeta potential; and a cyclic compound having a mother nucleus with a ring structure and two or more anionic functional groups bonded to the mother nucleus, in which the abrasives contain silica. This polishing composition is used for polishing objects to be polished containing silicon oxide and silicon nitride.

公开(公告)号：US10988636B2

公开(公告)日：2021-04-27

申请号：US16535570

申请日：2019-08-08

Applicant: FUJIMI INCORPORATED

Inventor： Toshio Shinoda ,  Aya Nishimura

IPC: C09G1/02 ,  H01L21/321 ,  H01L21/306

Abstract: To provide a polishing composition capable of polishing an object to be polished containing a silicon nitride film at a high polishing removal rate and reducing the particle residual amount on the object to be polished and a method for manufacturing the same, a polishing method, and a method for manufacturing a substrate.
A polishing composition is a polishing composition containing abrasives, an anionic surfactant, and a dispersion medium, in which the anionic surfactant has at least one kind of acidic functional group selected from the group consisting of a sulfo group, a phosphate group, and a phosphonic acid group and a polyoxyalkylene group and the pH is less than 7 and which is used for polishing an object to be polished containing a silicon nitride film.

公开(公告)号：US20200071567A1

公开(公告)日：2020-03-05

申请号：US16557271

申请日：2019-08-30

Applicant: Fujimi Incorporated

Inventor： Toshio Shinoda ,  Yoshihiro Izawa ,  Daiki Ito

IPC: C09G1/02 ,  C09K3/14

Abstract: The polishing composition according to the present invention is used to polish an object to be polished having a silicon oxide film, contains an abrasive grain, a compound having a logarithmic value (Log P) of partition coefficient of 1.0 or more, and a dispersing medium, and has a pH of less than 7.

公开(公告)号：US20220372330A1

公开(公告)日：2022-11-24

申请号：US17729672

申请日：2022-04-26

Applicant: FUJIMI INCORPORATED

Inventor： Masashi Abe ,  Toshio Shinoda ,  Satoshi Ishiguro ,  Satoru Yarita

IPC: C09G1/02 ,  C01B33/141

Abstract: The method for producing a polishing composition according to the present invention includes mixing a dispersion containing silica and a solution containing a silane coupling agent having a cationic group at a concentration of 0.03% by mass or more and less than 1% by mass to obtain a dispersion containing cationically modified silica.

公开(公告)号：US20200048497A1

公开(公告)日：2020-02-13

申请号：US16535570

申请日：2019-08-08

Applicant: FUJIMI INCORPORATED

Inventor： Toshio Shinoda ,  Aya Nishimura

IPC: C09G1/02 ,  H01L21/321

Abstract: To provide a polishing composition capable of polishing an object to be polished containing a silicon nitride film at a high polishing removal rate and reducing the particle residual amount on the object to be polished and a method for manufacturing the same, a polishing method, and a method for manufacturing a substrate.A polishing composition is a polishing composition containing abrasives, an anionic surfactant, and a dispersion medium, in which the anionic surfactant has at least one kind of acidic functional group selected from the group consisting of a sulfo group, a phosphate group, and a phosphonic acid group and a polyoxyalkylene group and the pH is less than 7 and which is used for polishing an object to be polished containing a silicon nitride film.

公开(公告)号：US10406652B2

公开(公告)日：2019-09-10

申请号：US15127294

申请日：2015-02-26

Applicant: FUJIMI INCORPORATED

Inventor： Toshio Shinoda

IPC: B24D3/00 ,  C09K3/14 ,  B24B37/04 ,  H01L21/3105 ,  C09G1/02 ,  B24D3/02 ,  B24D11/00 ,  B24D18/00 ,  C08K3/14 ,  C08K3/22 ,  C08K3/36

Abstract: The present invention provides a polishing composition with which differences in height of a SiN film can be sufficiently removed.The present invention is a polishing composition for use in polishing a polishing object having a surface which is positively charged at a pH of less than 6, containing water, abrasive grains, and an anionic copolymer having a specific unit structure, and having a pH of less than 6, wherein the anionic copolymer has at least two acidic groups having different acidities.

公开(公告)号：US09340707B2

公开(公告)日：2016-05-17

申请号：US14394412

申请日：2013-04-10

Applicant: FUJIMI INCORPORATED

Inventor： Toshio Shinoda

IPC: C09K13/06 ,  C09G1/02 ,  B24B37/04 ,  C09K3/14 ,  H01L21/306

CPC classification number: C09G1/02 ,  B24B37/042 ,  C09K3/1463 ,  H01L21/30625

Abstract: Provided is a polishing composition used for polishing a semiconductor substrate having a through-silicon via structure, comprising an oxidizing agent having a standard electrode potential of 350 mV or more and 740 mV or less, a silicon polishing accelerating agent, a through-silicon via material polishing speed increasing agent, a silicon contamination preventing agent, and water.

Abstract translation: 本发明提供一种抛光组合物，其用于研磨具有贯通硅通孔结构的半导体衬底，该半导体衬底包括标准电极电位为350mV以上且740mV以下的氧化剂，硅研磨促进剂，通过硅通孔 材料抛光加速剂，硅污染防止剂和水。