POLISHING COMPOSITION, POLISHING METHOD AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE

    公开(公告)号:US20220298380A1

    公开(公告)日:2022-09-22

    申请号:US17698962

    申请日:2022-03-18

    Abstract: Provided is a polishing composition capable of polishing a layer containing an element in group 13 of the periodic table in a content of more than 40 mass % at a high polishing speed. Provided is a polishing composition for use in polishing an object to be polished having a layer containing an element in group 13 of the periodic table in a content of more than 40 mass %, the polishing composition containing a cationically modified silica, a polyalkylene glycol, and an acid.

    POLISHING COMPOSITION
    2.
    发明申请

    公开(公告)号:US20200308449A1

    公开(公告)日:2020-10-01

    申请号:US16797177

    申请日:2020-02-21

    Abstract: An object of the present invention is to provide a new polishing composition that contributes to improving the quality of a device.There is provided a polishing composition containing: an abrasive grain having an organic acid immobilized on a surface thereof; a first water-soluble polymer having a sulfonic acid group or a group having a salt thereof, or a carboxyl group or a group having a salt thereof; a second water-soluble polymer different from the first water-soluble polymer; a nonionic surfactant; and an aqueous carrier, wherein the polishing composition is used for polishing an object to be polished.

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