COMPOSITION FOR SURFACE TREATMENT AND METHOD OF PRODUCING THE SAME, SURFACE TREATMENT METHOD, AND METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE

    公开(公告)号:US20210130735A1

    公开(公告)日:2021-05-06

    申请号:US16491845

    申请日:2018-01-19

    Inventor: Yasuto ISHIDA

    Abstract: The purpose of the present invention is to provide means for sufficiently removing residues on a surface of an object which has been polished including silicon nitride, silicon oxide, or polysilicon.
    Provided is a composition for surface treatment including an anionic surfactant having a molecular weight of 1,000 or less and water, the composition having a pH of less than 7, wherein a ratio of a molecular weight of a hydrophilic moiety to a molecular weight of a hydrophobic moiety (the molecular weight of the hydrophilic moiety/the molecular weight of the hydrophobic moiety) of the anionic surfactant is 0.4 or more (in which the hydrophobic moiety is a hydrocarbon group having 4 or more carbon atoms and the hydrophilic moiety is a part excluding the hydrophobic moiety and a counterion), and the composition for surface treatment is used for surface treatment of an object which has been polished including at least one selected from the group consisting of silicon nitride, silicon oxide, and polysilicon.

    COMPOSITION FOR SURFACE TREATMENT, AND METHOD FOR SURFACE TREATMENT USING THE SAME

    公开(公告)号:US20190177656A1

    公开(公告)日:2019-06-13

    申请号:US16324090

    申请日:2017-06-26

    Inventor: Yasuto ISHIDA

    Abstract: The present invention is to provide a means with which foreign matters remaining on a surface of a polished object to be polished can be sufficiently removed. The present invention relates to a composition for surface treatment for a polished object to be polished, including: a (co)polymer containing a structural unit A having a phosphonic acid group and a divalent (poly)oxyhydrocarbon group or a salt thereof; and water, wherein a content of the structural units A exceeds 50% by mole relative to the total structural units forming the (co)polymer.

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