公开(公告)号：US20170357067A1

公开(公告)日：2017-12-14

申请号：US15671812

申请日：2017-08-08

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Yutaka OHKI ,  Kazuyuki UMENO ,  Ryuichiro MINATO

IPC: G02B6/42 ,  H01S5/22 ,  G02B6/43 ,  H01S5/24

CPC classification number: G02B6/4295 ,  G02B6/42 ,  G02B6/4203 ,  G02B6/43 ,  H01S5/02284 ,  H01S5/0425 ,  H01S5/1017 ,  H01S5/16 ,  H01S5/166 ,  H01S5/168 ,  H01S5/22 ,  H01S5/2202 ,  H01S5/2231 ,  H01S5/227 ,  H01S5/24 ,  H01S2301/16 ,  H01S2301/185

Abstract: A semiconductor laser device includes a semiconductor layer portion having an active layer and performs multi-mode oscillation of laser light. Further, the semiconductor layer portion includes first and second regions, the second region being located closer to a facet on a laser light radiation side than the first region, the first region and the second region include a stripe region in which the laser light is guided, and an optical confinement effect of the laser light to the stripe region in a horizontal direction in the second region is less than that in the first region.