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公开(公告)号：US20230020128A1
公开(公告)日：2023-01-19
申请号：US17951291
申请日：2022-09-23
Applicant: FURUKAWA ELECTRIC CO., LTD.
Inventor： Takahiro TOMIYASU , Eisaku KAJI , Yutaka OHKI
IPC: H01S5/023 , H01S5/02345
Abstract: A submount includes a light emitting device mounted thereon. The submount includes: a base including a first surface extending in a first direction and in a second direction that is orthogonal to the first direction; a first electrode extending in the first direction and in the second direction on the first surface, the first electrode including a first end in the second direction, and a second end in opposite direction of the second direction, the second end extending in the first direction; and a second electrode extending in the first direction and in the second direction on the first surface, the second electrode including a third end in the opposite direction of the second direction, the third end being separated from the first end in the second direction with a gap therebetween, and a fourth end in the second direction, the fourth end extending in the first direction. In the second electrode, a second width between the third end and the fourth end in the second direction differs according to a position in the first direction.
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公开(公告)号：US20150146757A1
公开(公告)日：2015-05-28
申请号：US14614561
申请日：2015-02-05
Applicant: FURUKAWA ELECTRIC CO., LTD.
Inventor： Yutaka OHKI , Satoshi ARAKAWA , Shunsuke OKUYAMA , Masaki FUNABASHI , Junji YOSHIDA , Hidehiro TANIGUCHI
IPC: H01S5/026
CPC classification number: H01S3/094003 , H01S5/0014 , H01S5/02248 , H01S5/02284 , H01S5/02415 , H01S5/1064 , H01S5/227 , H01S2301/185
Abstract: A semiconductor laser module includes: a semiconductor laser outputting a laser light from an output-facet side of a waveguide which has a first narrow portion identical in width, a wide portion wider than the first narrow portion, a second narrow portion narrower than the wide portion, a first tapered portion between the first narrow portion and the wide portion and increasing in width toward the wide portion, and a second tapered portion between the wide portion and the second narrow portion and decreasing in width toward the second narrow portion; and an optical fiber to which the laser light is input has an optical-feedback unit reflecting a predetermined wavelength of light. The semiconductor laser is enclosed in a package with one end of the optical fiber. The optical-feedback unit has a first optical-feedback unit set at a predetermined reflection center wavelength determining an oscillation wavelength and a second optical-feedback unit.
Abstract translation: 半导体激光器模块包括：半导体激光器，其输出来自波导的输出侧面的激光，该激光具有宽度相同的第一窄部分，宽于第一窄部分的宽部分，比宽度窄的第二窄部分 在所述第一窄部与所述宽部之间的第一锥形部分，朝向所述宽部扩大宽度，以及在所述宽部与所述第二窄部之间的第二锥形部，并且朝向所述第二狭窄部宽度减小; 并且输入激光的光纤具有反映预定波长的光的光学反馈单元。 半导体激光器被封装在具有光纤的一端的封装中。 光反馈单元具有设置在确定振荡波长的预定反射中心波长的第一光反馈单元和第二光反馈单元。
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3.发明申请公开(公告)号：US20210281039A1
公开(公告)日：2021-09-09
申请号：US17329666
申请日：2021-05-25
Applicant: FURUKAWA ELECTRIC CO., LTD.
Inventor： Eisaku KAJI , Yutaka OHKI
IPC: H01S5/0237 , H01S5/023
Abstract: A semiconductor-laser-chip-on-submount includes: a semiconductor laser chip that includes a semiconductor portion having an emitting facet and a rear facet along a longitudinal direction and emits laser light from the emitting facet; and a submount where the semiconductor laser chip is mounted. Further, a first distance between the submount and the emitting facet of the semiconductor portion is less than a second distance between the submount and the rear facet of the semiconductor portion.
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4.发明申请SEMICONDUCTOR LASER WITH VARIED-WIDTH WAVEGUIDE AND SEMICONDUCTOR LASER MODULE INCLUDING THE SAME 审中-公开具有变宽波长的半导体激光器和包括其的半导体激光器模块公开(公告)号：US20140314113A1
公开(公告)日：2014-10-23
申请号：US14322401
申请日：2014-07-02
Applicant: Furukawa Electric Co., Ltd.
Inventor： Yutaka OHKI , Satoshi ARAKAWA , Shunsuke OKUYAMA , Masaki FUNABASHI , Junji YOSHIDA , Hidehiro TANIGUCHI
CPC classification number: H01S5/20 , H01S5/0014 , H01S5/02248 , H01S5/02284 , H01S5/02415 , H01S5/1064 , H01S5/227 , H01S2301/185
Abstract: A semiconductor laser outputs a laser light from an output facet of a waveguide having an index waveguide structure, via a lens system. The waveguide includes, in order from a rear facet opposite to the output facet, a first narrow portion, a wide portion that is wider than the first narrow portion, a second narrow portion narrower than the wide portion, a first tapered portion formed between the first narrow portion and the wide portion, which expands toward the wide portion, and a second tapered portion formed between the wide portion and the second narrow portion, which narrows toward the second narrow portion. Each of the first narrow portion, the wide portion, and the second narrow portion has a uniform width.
Abstract translation: 半导体激光器经由透镜系统从具有折射率波导结构的波导的输出面输出激光。 波导包括从与输出小面相对的后小面的顺序，包括比第一窄部宽的第一狭窄部分，比宽部分窄的第二窄部分，形成在第一窄部分之间的第一锥形部分 第一窄部分和朝向宽部分扩展的宽部分，以及形成在宽部分和第二窄部分之间的朝向第二窄部分变窄的第二锥形部分。 第一狭窄部分，宽部分和第二窄部分中的每一个具有均匀的宽度。
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公开(公告)号：US20170357067A1
公开(公告)日：2017-12-14
申请号：US15671812
申请日：2017-08-08
Applicant: FURUKAWA ELECTRIC CO., LTD.
Inventor： Yutaka OHKI , Kazuyuki UMENO , Ryuichiro MINATO
CPC classification number: G02B6/4295 , G02B6/42 , G02B6/4203 , G02B6/43 , H01S5/02284 , H01S5/0425 , H01S5/1017 , H01S5/16 , H01S5/166 , H01S5/168 , H01S5/22 , H01S5/2202 , H01S5/2231 , H01S5/227 , H01S5/24 , H01S2301/16 , H01S2301/185
Abstract: A semiconductor laser device includes a semiconductor layer portion having an active layer and performs multi-mode oscillation of laser light. Further, the semiconductor layer portion includes first and second regions, the second region being located closer to a facet on a laser light radiation side than the first region, the first region and the second region include a stripe region in which the laser light is guided, and an optical confinement effect of the laser light to the stripe region in a horizontal direction in the second region is less than that in the first region.
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Patent Agency Ranking
公开(公告)号：US20140072007A1
公开(公告)日：2014-03-13
申请号：US14078547
申请日：2013-11-13
Applicant: Furukawa Electric Co., Ltd.
Inventor： Hidehiro TANIGUCHI , Yutaka OHKI
IPC: H01S5/00
CPC classification number: H01S5/005 , G02B6/4202 , G02B6/4248 , H01S5/022 , H01S5/02252 , H01S5/02284 , H01S5/02415 , H01S5/02484 , H01S5/02492 , H01S5/146 , H01S5/147 , H01S2301/16
Abstract: To achieve stable multimode output even when driven by a drive current near a threshold value, provided is a laser apparatus comprising a semiconductor laser element; a wavelength selecting element that performs laser oscillation by forming a resonator between itself and a reflective surface of the semiconductor laser element to output oscillated laser light; and an optical system that is optically coupled to an emission surface of the semiconductor laser element with a coupling efficiency η and inputs to the wavelength selecting element light output from the emission surface. The optical system causes a value that is correlated with a minimum light output within a linear light output region in which light output is linear with respect to an injection current injected to the semiconductor laser element to be less than this value occurring when the coupling efficiency η is at a maximum.
Abstract translation: 即使在驱动电流接近阈值驱动的情况下也能实现稳定的多模输出，提供了包括半导体激光元件的激光装置; 波长选择元件，通过在其半导体激光元件的自身与反射表面之间形成谐振器来执行激光振荡，以输出振荡的激光; 以及光学系统，其以耦合效率ηa和与从发射表面输出的波长选择元件光的输入光学耦合到半导体激光元件的发射表面。 光学系统引起与在相对于注入到半导体激光元件的注入电流的光输出为线性的线性光输出区域内的最小光输出相关的值小于当耦合效率eta 是最大的。
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公开(公告)号：US20190020178A1
公开(公告)日：2019-01-17
申请号：US16054462
申请日：2018-08-03
Applicant: FURUKAWA ELECTRIC CO., LTD.
Inventor： Atsushi OGURI , Etsuji KATAYAMA , Yuta ISHIGE , Toshio KIMURA , Yutaka OHKI , Hajime MORI
Abstract: A laser apparatus includes light source elements outputting laser beams; a wavelength-selecting element disposed in an optical path of each of the laser beams and configured to cause light in a predetermined wavelength band to selectively transmit therethrough; and a partially transmissive-reflector that receives the light transmitted through the wavelength-selecting element, reflects a part of the input light toward the wavelength-selecting element, and causes its remainder to transmit therethrough. The wavelength-selecting element causes a part of the respective laser beams output from the respective light source elements to selectively transmit therethrough, the partially transmissive-reflector reflects a part of the respective transmitted laser beams, and the wavelength-selecting element causes a part of the respective reflected laser beams to transmit to return to the light source elements, and each of the light source elements preferentially oscillates at a wavelength of the laser beam that transmits through the wavelength-selecting element.
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公开(公告)号：US20160181761A1
公开(公告)日：2016-06-23
申请号：US15059304
申请日：2016-03-03
Applicant: FURUKAWA ELECTRIC CO., LTD.
Inventor： Hidehiro TANIGUCHI , Yutaka OHKI
CPC classification number: H01S5/0421 , B82Y20/00 , H01L33/005 , H01L33/305 , H01S5/028 , H01S5/2004 , H01S5/2068 , H01S5/2072 , H01S5/22 , H01S5/3054 , H01S5/3063 , H01S5/343 , H01S5/34313 , H01S2304/04
Abstract: Provided is a semiconductor light device comprising a semiconductor substrate having a first conduction type; a first cladding layer having the first conduction type deposited above the semiconductor substrate; an active layer; a second cladding layer having a second conduction type; and a contact layer. The active layer includes a window portion that is disordered via diffusion of vacancies and a non-window portion having less disordering than the window portion, and the contact layer includes a first region and a second region that is below the first region and has greater affinity for hydrogen than the first region.
Abstract translation: 提供一种包括具有第一导电类型的半导体衬底的半导体光器件; 具有淀积在半导体衬底上方的第一导电类型的第一包层; 活性层 具有第二导电类型的第二覆层; 和接触层。 有源层包括通过空位的扩散而无序的窗口部分和具有比窗口部分更少的无序的非窗口部分，并且接触层包括位于第一区域之下并且具有更大亲和力的第一区域和第二区域 用于氢气比第一区域。
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公开(公告)号：US20240006849A1
公开(公告)日：2024-01-04
申请号：US18468800
申请日：2023-09-18
Applicant: FURUKAWA ELECTRIC CO., LTD.
Inventor： Yasumasa KAWAKITA , Yoshito SAIJO , Yutaka OHKI
CPC classification number: H01S5/1082 , H01S5/16 , H01S5/0282 , H01S5/34313 , H01S5/34353 , H01S5/0202
Abstract: A semiconductor laser device includes: a layered structure in which a first conductivity type cladding layer, an active layer, a second conductivity type cladding layer, and a contact layer are layered in a first direction, the layered structure including a facet in a second direction intersecting the first direction, the facet outputting laser light, a non-window region, and a window region, the window region having a bandgap larger than a bandgap of the non-window region; a first electrode electrically connected to the first conductivity type cladding layer; a second electrode that is formed on the contact layer and constitutes a current path through the layered structure with the first electrode; a passivation layer formed on the facet and having a bandgap larger than the bandgap of the window region; and a dielectric reflecting coating configured to cover an opposite side of the passivation layer from the facet.
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公开(公告)号：US20210367400A1
公开(公告)日：2021-11-25
申请号：US17394978
申请日：2021-08-05
Applicant: FURUKAWA ELECTRIC CO., LTD.
Inventor： Kazuyuki UMENO , Yutaka OHKI
IPC: H01S5/042 , H01S5/323 , H01S5/0234
Abstract: An electrode comprising a Ti layer and a Pt layer that are sequentially laid on a surface of a p-type semiconductor layer. Further, a thermal impedance per unit area of a contact portion that is in contact with the surface of the p-type semiconductor layer is equal to or smaller than 1.2×104 K/W·m2.
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