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    NITRIDE SEMICONDUCTOR LASER ELEMENT
    2.
    发明申请
    NITRIDE SEMICONDUCTOR LASER ELEMENT 有权
    氮化物半导体激光元件

    公开(公告)号：US20080304530A1

    公开(公告)日：2008-12-11

    申请号：US12132880

    申请日：2008-06-04

    申请人： Tomonori MORIZUMI

    发明人： Tomonori MORIZUMI

    IPC分类号： H01S5/323

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/166 ,  H01S5/22

    摘要： A nitride semiconductor laser element comprises; a nitride semiconductor layer that includes a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer, and that has a cavity with end faces, and a first protective film that is in contact with at least one end face of the cavity, wherein the first protective film has a film structure in which bright and dark parts comprising a region in contact with the active layer and a region in contact with the first and second nitride semiconductor layers are observed under scanning transmission electron microscopy, or the first protective film has a film structure in which the crystallinity at a portion adjacent to the active layer is different from that at portions adjacent to the first and second nitride semiconductor layers.

    摘要翻译： 氮化物半导体激光元件包括： 包括第一氮化物半导体层，有源层和第二氮化物半导体层的氮化物半导体层，并且具有端面的空腔，以及与所述空腔的至少一个端面接触的第一保护膜 其中，所述第一保护膜具有膜结构，其中在扫描透射电子显微镜下观察到包括与所述有源层接触的区域的明暗部分和与所述第一和第二氮化物半导体层接触的区域，或所述第一保护膜 膜具有膜结构，其中与有源层相邻的部分的结晶度不同于与第一和第二氮化物半导体层相邻的部分处的结晶度。

    Semiconductor laser device and a method for the manufacture thereof
    3.
    发明授权
    Semiconductor laser device and a method for the manufacture thereof 失效
    半导体激光装置及其制造方法

    公开(公告)号：US5608750A

    公开(公告)日：1997-03-04

    申请号：US282312

    申请日：1994-07-29

    申请人： Shinichi Nakatsuka ,  Kenji Uchida ,  Misuzu Sagawa ,  Satoru Kikuchi

    发明人： Shinichi Nakatsuka ,  Kenji Uchida ,  Misuzu Sagawa ,  Satoru Kikuchi

    IPC分类号： H01S5/10 ,  H01S5/16 ,  H01S3/19

    CPC分类号： H01S5/16 ,  H01S5/1082 ,  H01S5/166

    摘要： A semiconductor laser device is provided which is designed to prevent end surface optical damage, thereby permitting an increase in the output of the semiconductor laser. To achieve this, an active layer at the light emitting end surface portion of the semiconductor laser device is recessed inwardly by a distance between 50 nm and 300 nm (depending on the amount of etching) from the end surfaces of the crystal layers lying on both sides of the active layer. The recess serves to improve the heat dissipation of the active layer portion. This results in improving the amount of light output of the semiconductor laser which is possible without causing optical damage. A method for making the device is also provided. This method permits achieving the above-noted advantages simply by adding an etching step to the conventional semiconductor laser fabrication process, without requiring special equipment or technique.

    摘要翻译： 提供了一种半导体激光器件，其设计用于防止端面光学损伤，从而允许半导体激光器的输出增加。 为了实现这一点，在半导体激光器件的发光端面部分处的有源层从位于两者上的晶体层的端面向内凹入50nm至300nm之间的距离（取决于蚀刻量） 活动层的两侧。 该凹部用于改善有源层部分的散热。 这导致可以在不引起光学损伤的情况下改善半导体激光器的光输出量。 还提供了制造该装置的方法。 该方法简单地通过在常规的半导体激光器制造工艺中添加蚀刻步骤来实现上述优点，而不需要特殊的设备或技术。

    Nitride semiconductor laser element
    6.
    发明授权
    Nitride semiconductor laser element 有权
    氮化物半导体激光元件

    公开(公告)号：US07804872B2

    公开(公告)日：2010-09-28

    申请号：US12132880

    申请日：2008-06-04

    申请人： Tomonori Morizumi

    发明人： Tomonori Morizumi

    IPC分类号： H01S5/00

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/166 ,  H01S5/22

    摘要： A nitride semiconductor laser element comprises; a nitride semiconductor layer that includes a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer, and that has a cavity with end faces, and a first protective film that is in contact with at least one end face of the cavity, wherein the first protective film has a film structure in which bright and dark parts comprising a region in contact with the active layer and a region in contact with the first and second nitride semiconductor layers are observed under scanning transmission electron microscopy, or the first protective film has a film structure in which the crystallinity at a portion adjacent to the active layer is different from that at portions adjacent to the first and second nitride semiconductor layers.

    摘要翻译： 氮化物半导体激光元件包括： 包括第一氮化物半导体层，有源层和第二氮化物半导体层的氮化物半导体层，并且具有端面的空腔，以及与所述空腔的至少一个端面接触的第一保护膜 其中，所述第一保护膜具有膜结构，其中在扫描透射电子显微镜下观察到包括与所述有源层接触的区域的明暗部分和与所述第一和第二氮化物半导体层接触的区域，或所述第一保护膜 膜具有膜结构，其中与有源层相邻的部分的结晶度不同于与第一和第二氮化物半导体层相邻的部分处的结晶度。

    High power semiconductor laser diode and method for making such a diode
    9.
    发明授权
    High power semiconductor laser diode and method for making such a diode 有权
    大功率半导体激光二极管及其制造方法

    公开(公告)号：US06798815B2

    公开(公告)日：2004-09-28

    申请号：US10131335

    申请日：2002-04-24

    申请人： Berthold Schmidt ,  Susanne Pawlik ,  Norbert Lichtenstein

    发明人： Berthold Schmidt ,  Susanne Pawlik ,  Norbert Lichtenstein

    IPC分类号： H01S303

    CPC分类号： H01S5/22 ,  H01S5/0202 ,  H01S5/10 ,  H01S5/1064 ,  H01S5/166 ,  H01S5/2036 ,  H01S5/204

    摘要： Semiconductor laser diodes, particularly high power ridge waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement in particular consisting of novel design of the ridge waveguide of the laser. Essentially the novel design consists in a segmented ridge waveguide having at least two straight segments, i.e. segments with constant, but different cross sections or widths, and at least one flared segment connecting the two different straight segments. A further improvement can be achieved by combining this approach with a laser diode design termed “unpumped end sections” and described in copending U.S. patent application Ser. No. 09/852,994, entitled “High Power Semiconductor Laser Diode”. Preferable for an advantageous manufacturing process is a segmented ridge waveguide design with three straight segments, at least two of them differing in cross section or width, and two flared segments connecting the differing straight segments. This latter design results in a wafer pattern of identical and identically oriented laser diode structures, thus allowing the use of standard manufacturing processes.

    摘要翻译： 半导体激光二极管，特别是高功率脊波导激光二极管，通常用作光电子学中所谓的用于光通信线路中光纤放大器的泵激光二极管。 为了提供这种激光二极管的期望的高功率输出和稳定性并且避免在使用期间的劣化，本发明涉及这种器件的改进的设计，其改进特别地包括激光器的脊形波导的新颖设计。 本质上，新颖的设计包括具有至少两个直段，即具有恒定但不同横截面或宽度的段的分段脊波导，以及连接两个不同直段的至少一个扩口段。 可以通过将该方法与称为“未抽头端部分”的激光二极管设计相结合并在共同未决的美国专利申请序列号Ser。 题为“大功率半导体激光二极管”的No.09 / 852,994。 优选的制造过程优选是具有三个直段的分段脊波导设计，其中至少两个横截面或宽度不同，以及两个连接不同直段的扩口段。 后一种设计导致相同且相同方向的激光二极管结构的晶片图案，从而允许使用标准制造工艺。