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    Ridge laser
    2.
    发明授权
    Ridge laser 有权
    脊激光

    公开(公告)号：US09281656B2

    公开(公告)日：2016-03-08

    申请号：US14416625

    申请日：2013-06-03

    申请人： OSRAM Opto Semiconductors GmbH

    发明人： Jens Mueller ,  Adrian Stefan Avramescu

    IPC分类号： H01S5/042 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/343

    CPC分类号： H01S5/0425 ,  H01S5/2009 ,  H01S5/2018 ,  H01S5/22 ,  H01S5/2206 ,  H01S5/221 ,  H01S5/2222 ,  H01S5/2231 ,  H01S5/2232 ,  H01S5/34333 ,  H01S2301/166 ,  H01S2301/176

    摘要： In at least one embodiment, the bar laser (1) has a semiconductor layer sequence (2) with an active zone (20). A waveguide (3) with a defined width (B) is formed as an elevation from the semiconductor layer sequence (2). A contact metallization (4) is applied to an upper side (30) of the waveguide (3) facing away from the active zone (20). A current flow layer (5) is in direct contact with the contact metallization (4). The contact metallization (4) is electrically connected via the current flow layer (5). A current flow width (C) of the active zone (20) and/or the waveguide (3) is less than the width (B) of the waveguide (3).

    摘要翻译： 在至少一个实施例中，条形激光器（1）具有带有活性区域（20）的半导体层序列（2）。 具有限定宽度（B）的波导（3）从半导体层序列（2）形成为仰角。 接触金属化（4）被施加到面向远离有效区（20）的波导（3）的上侧（30）。 电流流动层（5）与接触金属化（4）直接接触。 接触金属化（4）经由电流流动层（5）电连接。 有源区（20）和/或波导（3）的电流流动宽度（C）小于波导（3）的宽度（B）。

    PASSIVE WAVEGUIDE STRUCTURE WITH ALTERNATING GAINAS/ALINAS LAYERS FOR MID-INFRARED OPTOELECTRONIC DEVICES
    3.
    发明申请
    PASSIVE WAVEGUIDE STRUCTURE WITH ALTERNATING GAINAS/ALINAS LAYERS FOR MID-INFRARED OPTOELECTRONIC DEVICES 有权
    具有中等红外光电设备的替代增益/亚铝层的被动波形结构

    公开(公告)号：US20150249319A1

    公开(公告)日：2015-09-03

    申请号：US14628394

    申请日：2015-02-23

    申请人： Thorlabs Quantum Electronics, Inc.

    发明人： Catherine Genevieve Caneau ,  Feng Xie ,  Chung-En Zah

    IPC分类号： H01S5/026 ,  H01S5/02 ,  H01S5/20 ,  H01S5/34

    CPC分类号： H01S5/026 ,  H01S5/0208 ,  H01S5/06256 ,  H01S5/2031 ,  H01S5/2206 ,  H01S5/3401 ,  H01S5/3402 ,  H01S2301/185

    摘要： Disclosed is a semiconductor optical emitter having an optical mode and a gain section, the emitter comprising a low loss waveguide structure made of two alternating layers of semiconductor materials A and B, having refractive indexes of Na and Nb, respectively, with an effective index No of the optical mode in the low loss waveguide between Na and Nb, wherein No is within a 5% error margin of identical to a refractive index of the gain section and wherein the gain section is butt-jointed with the low loss waveguide, and wherein the size and shape of the optical mode(s) in the low loss waveguide and gain section are within a 10% error margin of equal. Desirably, at least one of the semiconductor materials A and B has a sufficiently large band gap that the passive waveguide structure blocks current under a voltage bias of 15 V.

    摘要翻译： 公开了一种具有光学模式和增益部分的半导体光发射器，发射极包括分别具有折射率为Na和Nb的两个交替层的半导体材料A和B的低损耗波导结构，其有效指数为 在Na和Nb之间的低损耗波导中的光学模式，其中No在与增益部分的折射率相同的5％误差范围内，并且其中增益部分与低损耗波导对接，并且其中 低损耗波导和增益部分中的光学模式的尺寸和形状在相等的10％误差范围内。 期望地，半导体材料A和B中的至少一个具有足够大的带隙，无源波导结构在15V的电压偏压下阻挡电流。

    SEMICONDUCTOR LASER AND METHOD OF MANUFACTURING THE SAME
    6.
    发明申请
    SEMICONDUCTOR LASER AND METHOD OF MANUFACTURING THE SAME 审中-公开
    半导体激光器及其制造方法

    公开(公告)号：US20130070798A1

    公开(公告)日：2013-03-21

    申请号：US13587036

    申请日：2012-08-16

    申请人： Go Sakaino ,  Harunaka Yamaguchi ,  Takashi Nagira

    发明人： Go Sakaino ,  Harunaka Yamaguchi ,  Takashi Nagira

    IPC分类号： H01S5/24 ,  H01L33/02

    CPC分类号： H01S5/2275 ,  H01S5/12 ,  H01S5/2009 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/2224

    摘要： A semiconductor laser includes a semiconductor laser portion including an active layer portion having a p-type cladding layer, an active layer, and an n-type cladding layer on a p-type InP semiconductor substrate; and current confining structures that fill spaces on both sides of the semiconductor laser portion. Each of the current confining structures includes a first p-type InP layer, a Ru-doped InP layer, and a second p-type InP layer. The Ru-doped InP layer is in contact only with the first and second p-type InP layers. To obtain the structure, timing of introduction of a halogen-containing gas is adjusted.

    摘要翻译： 半导体激光器包括在p型InP半导体衬底上包括具有p型覆层，有源层和n型覆层的有源层部分的半导体激光器部分; 以及填充半导体激光器部分两侧的空间的电流限制结构。 每个电流限制结构包括第一p型InP层，Ru掺杂InP层和第二p型InP层。 Ru掺杂的InP层仅与第一和第二p型InP层接触。 为了获得结构，调节含卤素气体的引入时间。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
    7.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号：US20120181504A1

    公开(公告)日：2012-07-19

    申请号：US13352804

    申请日：2012-01-18

    申请人： Shigeyuki Takagi ,  Hidehiko Yabuhara

    发明人： Shigeyuki Takagi ,  Hidehiko Yabuhara

    IPC分类号： H01L33/04 ,  H01L33/30

    CPC分类号： H01S5/34313 ,  B82Y20/00 ,  H01S5/2022 ,  H01S5/22 ,  H01S5/2206 ,  H01S5/222 ,  H01S5/2275 ,  H01S5/3213 ,  H01S5/3218 ,  H01S5/3402

    摘要： According to an embodiment, a semiconductor light emitting device is configured to emit light by energy relaxation of an electron between subbands of a plurality of quantum wells. The device includes an active layer and at least a pair of cladding layers. The active layer is provided in a stripe shape extending in a direction parallel to an emission direction of the light, and includes the plurality of quantum wells; and the active layer emits the light with a wavelength of 10 μm or more. Each of the cladding layers is provided both on and under the active layer respectively and have a lower refractive index than the active layer. At least one portion of the cladding layers contains a material having a different lattice constant from the active layer and has a lower optical absorption at a wavelength of the light than the other portion.

    摘要翻译： 根据实施例，半导体发光器件被配置为通过在多个量子阱的子带之间的电子的能量弛豫来发光。 该器件包括有源层和至少一对覆层。 有源层设置成在与光的发射方向平行的方向上延伸的条纹形状，并且包括多个量子阱; 有源层发射波长为10μm以上的光。 每个包层分别设置在有源层上和下方，并且具有比有源层更低的折射率。 包覆层的至少一部分包含与有源层具有不同晶格常数的材料，并且在比其他部分的光的波长处具有较低的光吸收。

    LASER DIODE AND SEMICONDUCTOR LIGHT-EMITTING DEVICE PRODUCING VISIBLE-WAVELENGTH RADIATION
    8.
    发明申请
    LASER DIODE AND SEMICONDUCTOR LIGHT-EMITTING DEVICE PRODUCING VISIBLE-WAVELENGTH RADIATION 失效
    产生可见波长辐射的激光二极管和半导体发光器件

    公开(公告)号：US20110280268A1

    公开(公告)日：2011-11-17

    申请号：US13188208

    申请日：2011-07-21

    申请人： Naoto Jikutani ,  Shunichi Sato

    发明人： Naoto Jikutani ,  Shunichi Sato

    IPC分类号： H01S5/343 ,  H01S5/22 ,  H01S5/00

    CPC分类号： H01S5/2202 ,  B82Y20/00 ,  H01S5/22 ,  H01S5/2206 ,  H01S5/2209 ,  H01S5/221 ,  H01S5/2231 ,  H01S5/3201 ,  H01S5/3434

    摘要： A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a pair of current-blocking regions of AlGaInP formed on the etching stopper layer so as to define a strip region therebetween, an optical waveguide layer of AlGaInP formed on the pair of current-blocking regions so as to cover the etching stopper layer in the stripe region, and a second cladding layer of AlGaInP formed on the optical waveguide layer, wherein the current-blocking regions having an Al content substantially identical with an Al content of the second cladding layer.

    摘要翻译： 激光二极管包括具有GaAs晶格常数或GaAs和GaP之间的基板，在基板上形成的AlGaInP的第一包层，形成在第一包层上的GaInAsP的有源层，形成在第一包层上的GaInP的蚀刻停止层 有源层，形成在蚀刻阻挡层上的一对电流阻挡区域，以便在其间限定条带区域，形成在一对电流阻挡区上的覆盖蚀刻阻挡层的AlGaInP光波导层 以及形成在光波导层上的AlGaInP的第二包覆层，其中，所述电流阻挡区域的Al含量基本上与第二包层的Al含量相同。

    Laser diode and semiconductor light-emitting device producing visible-wavelength radiation
    9.
    发明授权
    Laser diode and semiconductor light-emitting device producing visible-wavelength radiation 有权
    产生可见光波长的激光二极管和半导体发光器件

    公开(公告)号：US08009714B2

    公开(公告)日：2011-08-30

    申请号：US12696322

    申请日：2010-01-29

    申请人： Naoto Jikutani ,  Takashi Takahashi ,  Shunichi Sato

    发明人： Naoto Jikutani ,  Takashi Takahashi ,  Shunichi Sato

    IPC分类号： H01S5/00

    CPC分类号： H01S5/2202 ,  B82Y20/00 ,  H01S5/22 ,  H01S5/2206 ,  H01S5/2209 ,  H01S5/221 ,  H01S5/2231 ,  H01S5/3201 ,  H01S5/3434

    摘要： A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a pair of current-blocking regions of AlGaInP formed on the etching stopper layer so as to define a strip region therebetween, an optical waveguide layer of AlGaInP formed on the pair of current-blocking regions so as to cover the etching stopper layer in the stripe region, and a second cladding layer of AlGaInP formed on the optical waveguide layer, wherein the current-blocking regions having an Al content substantially identical with an Al content of the second cladding layer.

    摘要翻译： 激光二极管包括具有GaAs晶格常数或GaAs和GaP之间的基板，在基板上形成的AlGaInP的第一包层，形成在第一包层上的GaInAsP的有源层，形成在第一包层上的GaInP的蚀刻停止层 有源层，形成在蚀刻阻挡层上的一对电流阻挡区域，以便在其间限定条带区域，形成在一对电流阻挡区上的覆盖蚀刻阻挡层的AlGaInP光波导层 以及形成在光波导层上的AlGaInP的第二包覆层，其中，所述电流阻挡区域的Al含量基本上与第二包层的Al含量相同。