公开(公告)号：US20240006849A1

公开(公告)日：2024-01-04

申请号：US18468800

申请日：2023-09-18

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Yasumasa KAWAKITA ,  Yoshito SAIJO ,  Yutaka OHKI

IPC: H01S5/10 ,  H01S5/16 ,  H01S5/028 ,  H01S5/343 ,  H01S5/02

CPC classification number: H01S5/1082 ,  H01S5/16 ,  H01S5/0282 ,  H01S5/34313 ,  H01S5/34353 ,  H01S5/0202

Abstract: A semiconductor laser device includes: a layered structure in which a first conductivity type cladding layer, an active layer, a second conductivity type cladding layer, and a contact layer are layered in a first direction, the layered structure including a facet in a second direction intersecting the first direction, the facet outputting laser light, a non-window region, and a window region, the window region having a bandgap larger than a bandgap of the non-window region; a first electrode electrically connected to the first conductivity type cladding layer; a second electrode that is formed on the contact layer and constitutes a current path through the layered structure with the first electrode; a passivation layer formed on the facet and having a bandgap larger than the bandgap of the window region; and a dielectric reflecting coating configured to cover an opposite side of the passivation layer from the facet.