公开(公告)号：US11502212B2

公开(公告)日：2022-11-15

申请号：US16770388

申请日：2017-12-07

Applicant: First Solar, Inc.

Inventor： Hongbo Cao ,  Sachit Grover ,  William Hullinger Huber ,  Xiaoping Li ,  Dingyuan Lu ,  Roger Malik ,  Hongying Peng ,  Joseph John Shiang ,  Qianqian Xin ,  Gang Xiong

IPC: H01L31/0296 ,  H01L31/073 ,  H01L31/18

Abstract: A photovoltaic device (100) can include an absorber layer (160). The absorber layer (160) can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4×1015 cm−3. The absorber layer (160) can include oxygen in a central region of the absorber layer (160). The absorber layer (160) can include an alkali metal in the central region of the absorber layer (160). Methods for carrier activation can include exposing an absorber layer (160) to an annealing compound in a reducing environment (220). The annealing compound (224) can include cadmium chloride and an alkali metal chloride.

公开(公告)号：US09105802B2

公开(公告)日：2015-08-11

申请号：US14251280

申请日：2014-04-11

Applicant: First Solar, Inc.

Inventor： Hongbo Cao ,  Donald Franklin Foust

IPC: H01L31/073 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0296

CPC classification number: H01L31/18 ,  H01L31/022425 ,  H01L31/02963 ,  H01L31/073 ,  H01L31/1836 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method of making a photovoltaic device is presented. The method includes disposing an absorber layer on a window layer. The method further includes treating at least a portion of the absorber layer with a first solution including a first metal salt to form a first component, wherein the first metal salt comprises a first metal selected from the group consisting of manganese, cobalt, chromium, zinc, indium, tungsten, molybdenum, and combinations thereof. The method further includes treating at least a portion of the first component with cadmium chloride to form a second component. The method further includes treating at least a portion of the second component with a second solution including a second metal salt to form an interfacial layer on the second component, wherein the second metal salt comprises a second metal selected from the group consisting of manganese, cobalt, nickel, zinc, and combinations thereof.

Abstract translation: 提出了一种制造光伏器件的方法。 该方法包括在窗口层上设置吸收层。 该方法还包括用包含第一金属盐的第一溶液处理吸收层的至少一部分以形成第一组分，其中第一金属盐包含选自锰，钴，铬，锌的第一金属 ，铟，钨，钼及其组合。 该方法还包括用氯化镉处理至少一部分第一组分以形成第二组分。 该方法还包括用包含第二金属盐的第二溶液处理至少一部分第二组分以在第二组分上形成界面层，其中第二金属盐包含选自锰，钴 ，镍，锌及其组合。

公开(公告)号：US20230082990A1

公开(公告)日：2023-03-16

申请号：US17986747

申请日：2022-11-14

Applicant: First Solar, Inc.

Inventor： Hongbo Cao ,  Sachit Grover ,  William Hullinger Huber ,  Xiaoping Li ,  Dingyuan Lu ,  Roger Malik ,  Hongying Peng ,  Joseph John Shiang ,  Qianqian Xin ,  Gang Xiong

IPC: H01L31/0296 ,  H01L31/073 ,  H01L31/18

Abstract: According to the embodiments provided herein, a photovoltaic device can include an absorber layer. The absorber layer can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4×1015 cm−3. The absorber layer can include oxygen in a central region of the absorber layer. The absorber layer can include an alkali metal in the central region of the absorber layer. Methods for carrier activation can include exposing an absorber layer to an annealing compound in a reducing environment. The annealing compound can include cadmium chloride and an alkali metal chloride.

公开(公告)号：US20160181463A1

公开(公告)日：2016-06-23

申请号：US15057230

申请日：2016-03-01

Applicant: First Solar, Inc.

Inventor： Donald Franklin Foust ,  Hongbo Cao ,  Laura Anne Clark ,  Robert Andrew Garber ,  Scott Daniel Feldman-Peabody ,  Wyatt Keith Metzger ,  Yinghui Shan ,  Roman Shuba

IPC: H01L31/18

CPC classification number: H01L31/1828 ,  H01L21/02052 ,  H01L31/022425 ,  H01L31/03925 ,  H01L31/073 ,  Y02E10/50 ,  Y02E10/543

Abstract: Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented.

Abstract translation: 介绍了包括半导体材料在内的半导体层的处理方法。 一种方法包括使半导体材料的至少一部分与钝化剂接触。 该方法还包括通过将掺杂剂引入到半导体材料中来形成半导体层中的第一区域; 并形成富含硫族元素的区域。 该方法还包括在半导体层中形成第二区域，第二区域包括掺杂剂，其中第二区域中的掺杂剂的平均原子浓度大于第一区域中掺杂剂的平均原子浓度。 还介绍了光伏器件。

公开(公告)号：US20200381567A1

公开(公告)日：2020-12-03

申请号：US16770388

申请日：2017-12-07

Applicant: First Solar, Inc.

Inventor： Hongbo Cao ,  Sachit Grover ,  William Hullinger Huber ,  Xiaoping Li ,  Dingyuan Lu ,  Roger Malik ,  Hongying Peng ,  Joseph John Shiang ,  Qianqian Xin ,  Gang Xiong

IPC: H01L31/0296 ,  H01L31/073 ,  H01L31/18

Abstract: A photovoltaic device (100) can include an absorber layer (160). The absorber layer (160) can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4×1015cm-3. The absorber layer (160) can include oxygen in a central region of the absorber layer (160). The absorber layer (160) can include an alkali metal in the central region of the absorber layer (160). Methods for carrier activation can include exposing an absorber layer (160) to an annealing compound in a reducing environment (220). The annealing compound (224) can include cadmium chloride and an alkali metal chloride.

公开(公告)号：US20140220727A1

公开(公告)日：2014-08-07

申请号：US14251280

申请日：2014-04-11

Applicant: First Solar, Inc.

Inventor： Hongbo Cao ,  Donald Franklin Foust

IPC: H01L31/18

CPC classification number: H01L31/18 ,  H01L31/022425 ,  H01L31/02963 ,  H01L31/073 ,  H01L31/1836 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method of making a photovoltaic device is presented. The method includes disposing an absorber layer on a window layer. The method further includes treating at least a portion of the absorber layer with a first solution including a first metal salt to form a first component, wherein the first metal salt comprises a first metal selected from the group consisting of manganese, cobalt, chromium, zinc, indium, tungsten, molybdenum, and combinations thereof. The method further includes treating at least a portion of the first component with cadmium chloride to form a second component. The method further includes treating at least a portion of the second component with a second solution including a second metal salt to form an interfacial layer on the second component, wherein the second metal salt comprises a second metal selected from the group consisting of manganese, cobalt, nickel, zinc, and combinations thereof.

Abstract translation: 提出了一种制造光伏器件的方法。 该方法包括在窗口层上设置吸收层。 该方法还包括用包含第一金属盐的第一溶液处理吸收层的至少一部分以形成第一组分，其中第一金属盐包含选自锰，钴，铬，锌的第一金属 ，铟，钨，钼及其组合。 该方法还包括用氯化镉处理至少一部分第一组分以形成第二组分。 该方法还包括用包含第二金属盐的第二溶液处理至少一部分第二组分以在第二组分上形成界面层，其中第二金属盐包含选自锰，钴 ，镍，锌及其组合。