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公开(公告)号:US20160332865A1
公开(公告)日:2016-11-17
申请号:US15155448
申请日:2016-05-16
发明人: Chien-Chan CHEN , Yi-Der LIANG , Shiao-Yi LIN , Cheng-Kuang YANG
CPC分类号: B81B3/0054 , B81B2201/0257 , B81B2203/0118 , B81B2203/0361 , B81B2207/015 , B81B2207/07 , B81C1/00246 , B81C2201/013 , B81C2201/053 , B81C2203/0714 , B81C2203/0735 , H04R19/005 , H04R19/04
摘要: A support pillar is formed under a movable film for support. The support pillar includes a plurality of first metal micropillars, a base metal connection pillar layer and a first oxide encapsulation layer. The first metal micropillars are formed under the movable film and conductively connected to the movable film via metal connection. The base metal connection pillar layer is formed under the first metal micropillars and conductively connected to the first metal micropillars. The first oxide encapsulation layer fully or partially encapsulates the first metal micropillars to insulate the first metal micropillars from air, and shape the support pillar into a column shape.
摘要翻译: 支撑柱形成在用于支撑的可移动膜下。 支撑柱包括多个第一金属微柱,贱金属连接柱层和第一氧化物封装层。 第一金属微透镜形成在可动膜下方,并通过金属连接导电地连接到可动膜上。 基底金属连接柱层形成在第一金属微柱下面,并与第一金属微柱导电连接。 第一氧化物封装层完全或部分地封装第一金属微柱,以将第一金属微柱与空气绝缘,并将支柱形成柱形。
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公开(公告)号:US20170355592A1
公开(公告)日:2017-12-14
申请号:US15689530
申请日:2017-08-29
发明人: Chien-Chang CHEN , Yi-Der LIANG , Shiao-Yi LIN , Cheng-Kuang YANG
CPC分类号: B81B3/0054 , B81B3/0078 , B81B2201/0257 , B81B2203/0118 , B81B2203/0127 , B81B2203/0307 , B81B2203/0361 , B81B2207/015 , B81B2207/07 , B81C1/00246 , B81C2201/013 , B81C2201/053 , B81C2203/0714 , B81C2203/0735 , H04R19/005 , H04R19/04
摘要: The present invention disclosed a CMOS sensing component, a CMOS single chip and a method of manufacturing the same. The CMOS single chip comprises a movable film, at least one support pillar, a base metal layer and a circuit integration. The movable film is disposed on a top layer of the CMOS single chip and has a plurality of through-vias. The support pillar is disposed under the movable film to provide a supporting force of the movable film. The base metal layer is formed under the support pillars and isolated from the support pillars, and faces towards the movable film to form a micro capacitor to sense one of the outside sensing signals, the area of the base metal layer larger than the area of the movable film. The circuit integration is formed under the base metal layer, or formed under the base metal layer and on the side of the movable film, and connected to the movable film and the base metal layer, to provide operation voltages to the movable film and the base metal layer, and to receive the outside sensing signal generated sensed by the movable film and the base metal layer and convert the outside sensing signal into an output signal.
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公开(公告)号:US20170313576A1
公开(公告)日:2017-11-02
申请号:US15652960
申请日:2017-07-18
发明人: Chien-Chang CHEN , Yi-Der LIANG , Shiao-Yi LIN , Cheng-Kuang YANG
CPC分类号: B81B3/0054 , B81B3/0078 , B81B2201/0257 , B81B2203/0118 , B81B2203/0127 , B81B2203/0307 , B81B2203/0361 , B81B2207/015 , B81B2207/07 , B81C1/00246 , B81C2201/013 , B81C2201/053 , B81C2203/0714 , B81C2203/0735 , H04R19/005 , H04R19/04
摘要: The present invention disclosed a micro acoustic collector with a lateral cavity, comprising: a base metal layer; a movable film, an annular side wall; a lateral metal layer. The movable film faces towards the base metal layer to form a hollow space. The lateral metal layer is formed at a side of the movable film and around the movable film, fixed by the annular side wall and spaced apart from peripheral of the movable film by a distance, and the lateral metal layer faces towards the base metal layer to form a lateral cavity to assist an acoustic collection.
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公开(公告)号:US20170313575A1
公开(公告)日:2017-11-02
申请号:US15652920
申请日:2017-07-18
发明人: Chien-Chang CHEN , Yi-Der LIANG , Shiao-Yi LIN , Cheng-Kuang YANG
CPC分类号: B81B3/0054 , B81B3/0078 , B81B2201/0257 , B81B2203/0118 , B81B2203/0127 , B81B2203/0307 , B81B2203/0361 , B81B2207/015 , B81B2207/07 , B81C1/00246 , B81C2201/013 , B81C2201/053 , B81C2203/0714 , B81C2203/0735 , H04R19/005 , H04R19/04
摘要: The present invention disclosed a micro acoustic collector and CMOS microphone single chip. The micro acoustic collector comprising: a plurality of leaf-shaped structures annularly arranged with symmetry, each of the plurality of leaf-shaped structure having a suspended arm and a restrained arm, and the suspended arm of the plurality of leaf-shaped structures connected to a suspended fulcrum, and a plurality of through-vias formed in the suspended fulcrum and the plurality of leaf-shaped structures; a plurality of support pillars uniformly disposed under edges of the plurality of leaf-shaped structures corresponding to the restrained arms and the suspend arms; and a base metal layer formed under and insulated from the plurality of support pillars, and facing towards the inner-annular-supported acoustic collection film to form a hollow space.
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