-
1.发明申请Material removing processes in device formation and the devices formed thereby 有权器件形成中的材料去除工艺以及由此形成的器件公开(公告)号：US20100102398A1
公开(公告)日：2010-04-29
申请号：US12290054
申请日：2008-10-27
IPC分类号： H01L27/088 , H01L21/311
CPC分类号： H01L21/32134 , B81C1/00047
摘要： Devices having voids are producible by employing an electrochemical corrosion process. For example, an electrically conductive region is formed to have a surrounding chemically distinct region. Such formation is possible through conventional semiconductor processing techniques such as a copper damascene process. The surrounded conducting material is configured to be in electrical communication with a charge separation structure. The electrically conducting region is contacted with a fluid electrolyte and electromagnetic radiation is made to illuminate the charge separation region to induce separation of electrons and holes. The resulting separated charges are used to drive an electrochemical corrosion process at the conductive material/electrolyte interface resulting in the removal of at least a portion of the electrically conducting material. The induced corrosion leaves a void that is useful, for example, as a highly effective dielectric in integrated circuits, functions to allow component separation such as gear separation in microelectromechanical devices or produces long cavities useful for material separation analogous to the distillation columns used in liquid chromatography.
摘要翻译： 具有空隙的装置可通过采用电化学腐蚀工艺生产。 例如，形成导电区域以具有周围的化学上不同的区域。 这种形成可以通过常规的半导体处理技术例如铜镶嵌工艺来实现。 包围的导电材料被配置为与电荷分离结构电连通。 导电区域与流体电解质接触，并且使电磁辐射照射电荷分离区域以引起电子和空穴的分离。 所得到的分离的电荷用于在导电材料/电解质界面处驱动电化学腐蚀过程，导致去除至少一部分导电材料。 诱发的腐蚀会留下一个有用的空隙，例如作为集成电路中的高效电介质，有助于组件分离，如微机电装置中的齿轮分离，或产生类似于液体中使用的蒸馏塔的材料分离的长腔 色谱法。
-
公开(公告)号：US20090029490A1
公开(公告)日：2009-01-29
申请号：US12220169
申请日：2008-07-22
IPC分类号： H01L21/66
CPC分类号： H01L22/24 , H01L22/34 , H01L27/0629 , H01L29/945
摘要： It has been found that for silicon integrated circuits having capacitor structures or other p-n junctions structure at a technology node of 32 nm or smaller, photovoltaic induced corrosion of copper in the metallization stack is a significant issue. Thus processing conditions or device configurations are employed that preclude such corrosion. In one embodiment photovoltaic induced corrosion is monitored to prevent completion of devices with corrosion defects.
摘要翻译： 已经发现，对于在32nm或更小的技术节点处具有电容器结构或其它p-n结结构的硅集成电路，金属化堆叠中的铜的光诱导腐蚀是重要的问题。 因此采用排除这种腐蚀的加工条件或装置构型。 在一个实施例中，监视光伏诱发的腐蚀以防止具有腐蚀缺陷的装置的完成。
-
3.发明授权Material removing processes in device formation and the devices formed thereby 有权器件形成中的材料去除工艺以及由此形成的器件公开(公告)号：US07972873B2
公开(公告)日：2011-07-05
申请号：US12290054
申请日：2008-10-27
IPC分类号： H01L21/00 , H01L21/302 , H01L31/062
CPC分类号： H01L21/32134 , B81C1/00047
摘要： Devices having voids are producible by employing an electrochemical corrosion process. For example, an electrically conductive region is formed to have a surrounding chemically distinct region. Such formation is possible through conventional semiconductor processing techniques such as a copper damascene process. The surrounded conducting material is configured to be in electrical communication with a charge separation structure. The electrically conducting region is contacted with a fluid electrolyte and electromagnetic radiation is made to illuminate the charge separation region to induce separation of electrons and holes. The resulting separated charges are used to drive an electrochemical corrosion process at the conductive material/electrolyte interface resulting in the removal of at least a portion of the electrically conducting material. The induced corrosion leaves a void that is useful, for example, as a highly effective dielectric in integrated circuits, functions to allow component separation such as gear separation in microelectromechanical devices or produces long cavities useful for material separation analogous to the distillation columns used in liquid chromatography.
摘要翻译： 具有空隙的装置可通过采用电化学腐蚀工艺生产。 例如，形成导电区域以具有周围的化学上不同的区域。 这种形成可以通过常规的半导体处理技术例如铜镶嵌工艺来实现。 包围的导电材料被配置为与电荷分离结构电连通。 导电区域与流体电解质接触，并且使电磁辐射照射电荷分离区域以引起电子和空穴的分离。 所得到的分离的电荷用于在导电材料/电解质界面处驱动电化学腐蚀过程，导致去除至少一部分导电材料。 诱发的腐蚀会留下一个有用的空隙，例如作为集成电路中的高效电介质，有助于组件分离，如微机电装置中的齿轮分离，或产生类似于液体中使用的蒸馏塔的材料分离的长腔 色谱法。
-
公开(公告)号：US07291849B1
公开(公告)日：2007-11-06
申请号：US11237410
申请日：2005-09-28
CPC分类号： H01J37/263 , H01J2237/2826
摘要： A calibration standard includes a silicon substrate having a plurality of defined regions and a plurality of calibration marks placed on respective defined regions of the silicon substrate. Each calibration mark comprises a different calibration dimension indicator and a corresponding dimension identifier. A method for calibrating a transmission electron microscope using the standard comprises positioning the calibration standard in a viewing area of the transmission electron microscope and sequentially viewing the marks and adjusting the calibration of the microscope for each mark viewed.
摘要翻译： 校准标准包括具有多个限定区域的硅衬底和放置在硅衬底的相应限定区域上的多个校准标记。 每个校准标记包括不同的校准维度指示符和对应的维度标识符。 使用标准校准透射电子显微镜的方法包括将校准标准物定位在透射电子显微镜的观察区域中，并且依次观察标记并调整每个标记的显微镜校准。
-
公开(公告)号：US6110831A
公开(公告)日：2000-08-29
申请号：US923316
申请日：1997-09-04
IPC分类号： H01L21/3205 , H01L21/304 , H01L21/3105 , H01L21/66 , H01L23/544 , H01L21/465
CPC分类号： B24B37/013 , H01L21/31053 , H01L22/26 , H01L22/34 , H01L2924/0002
摘要： A method of manufacturing integrated circuits utilizing chemical mechanical polishing (CMP) is disclosed. A dielectric layer, illustratively, having a dopant, dye, etc. termed a "marker layer" is formed upon a wafer having partially fabricated integrated circuits thereon. An undoped, undyed layer is deposited upon the marker layer. The undoped or undyed layer is polished and the waste slurry is monitored until a signal indicating the exposure of the signal layer is obtained. Analysis of the signal provides an indication of when the CMP process should be terminated.
摘要翻译： 公开了利用化学机械抛光（CMP）制造集成电路的方法。 示例性地，具有称为“标记层”的掺杂剂，染料等的介电层形成在其上具有部分制造的集成电路的晶片上。 未标记的未染色层沉积在标记层上。 对未掺杂或未染色的层进行抛光，并监测废料浆料，直到获得指示信号层曝光的信号。 信号分析提供了CMP过程何时终止的指示。
-
-
-
-
搜索结果
5 条记录 (耗时 0.023 秒)
