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公开(公告)号:US3986043A
公开(公告)日:1976-10-12
申请号:US534945
申请日:1974-12-20
IPC分类号: H03K19/0185 , H03K5/02 , H03K17/687 , H03K19/017 , H03K19/08 , H03K19/0948 , H03K19/32 , H03K19/34 , H03K19/36
CPC分类号: H03K5/023 , H03K19/017 , H03K19/08 , H03K19/0948
摘要: A negative shunt feedback amplifier is disclosed for connection to the output node of a complex complementary metal oxide semiconductor logic circuit to increase the performance and reduce the FET device size. A CMOS inverter is coupled to the amplifier to restore the logic levels and to form the logic output. A first embodiment of the invention uses a resistor feedback and a second embodiment of the invention uses parallel N-channel and P-channel FETs to form the feedback impedance. The circuit has application in environments where a logic function requires a large number of FET devices resulting in a large output node capacitance and, thereby slowing the logic speed, as for example in a large DOT-OR circuit or at each output of a FET memory array.
摘要翻译: 公开了一种用于连接到复杂互补金属氧化物半导体逻辑电路的输出节点的负分流反馈放大器,以增加性能并降低FET器件尺寸。 CMOS反相器耦合到放大器以恢复逻辑电平并形成逻辑输出。 本发明的第一实施例使用电阻器反馈,并且本发明的第二实施例使用并行N沟道和P沟道FET来形成反馈阻抗。 该电路应用在逻辑功能需要大量FET器件的环境中,导致大的输出节点电容,从而减慢逻辑速度,例如在大DOT-OR电路中或在FET存储器的每个输出端 数组。
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公开(公告)号:US3986041A
公开(公告)日:1976-10-12
申请号:US534950
申请日:1974-12-20
IPC分类号: H03K19/0185 , H03K5/02 , H03K17/687 , H03K19/017 , H03K19/08 , H03K19/0948 , H03K19/32 , H03K19/34 , H03K19/36
CPC分类号: H03K5/023 , H03K19/017 , H03K19/08 , H03K19/0948
摘要: A negative shunt feedback amplifier is disclosed for connection to the output node of a complex complementary metal oxide semiconductor logic circuit to increase the performance and reduce the FET device size. A CMOS inverter is coupled to the amplifier to restore the logic levels and to form the logic output. A first embodiment of the invention uses a resistor feedback and a second embodiment of the invention uses parallel N-channel and P-channel FETs to form the feedback impedance. The circuit has application in environments where a logic function requires a large number of FET devices resulting in a large output node capacitance and, thereby slowing the logic speed, as for example in a large DOT-OR circuit or at each output of a FET memory array.
摘要翻译: 公开了一种用于连接到复杂互补金属氧化物半导体逻辑电路的输出节点的负分流反馈放大器,以增加性能并降低FET器件尺寸。 CMOS反相器耦合到放大器以恢复逻辑电平并形成逻辑输出。 本发明的第一实施例使用电阻器反馈,并且本发明的第二实施例使用并行N沟道和P沟道FET来形成反馈阻抗。 该电路应用在逻辑功能需要大量FET器件的环境中,导致大的输出节点电容,从而减慢逻辑速度,例如在大DOT-OR电路中或在FET存储器的每个输出端 数组。
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