摘要:
A semiconductor device capable of stable operation with low power consumption is provided. A logic circuit having a circuit configuration using a transistor including an oxide semiconductor in a channel formation region is included. The logic circuit is a two-input/two-output two-wire logic circuit. Transistors included in the logic circuit each include a gate and a back gate. An input terminal is electrically connected to one of a gate and a back gate of a transistor electrically connected to a wiring for supplying a high power supply potential. An output terminal is connected to the other of the gate and the back gate of the transistor electrically connected to the wiring for supplying a high power supply potential. An output terminal is electrically connected to one of a source and a drain of a transistor electrically connected to a wiring for supplying a low power supply potential. A gate or a back gate of the transistor electrically connected to the wiring for supplying a low power supply potential is electrically connected to an input terminal.
摘要:
A size setting method for a power switch transistor and a system thereof are proposed. A load current extracting step is performed to extract a first load current and a second load current. A limited voltage drop calculating step is performed to calculate a limited voltage drop according to a speed proportional value, the first load current and the second load current. A standard supply current calculating step is performed to calculate a standard supply current according to the limited voltage drop. A simulated supply current calculating step is performed to calculate a simulated supply current according to the standard supply current, the limited voltage drop and a line voltage value. A size setting step is performed to compare the first load current with the simulated supply current to calculate a size parameter, and set a size of the power switch transistor according to the size parameter.
摘要:
A pre-driver for driving an LVDS (Low Voltage Differential Signaling) driving circuit is provided. The pre-driver includes a first inverter, a high-pass filter, and a second inverter. The first inverter has an input terminal coupled to an input node of the pre-driver, and an output terminal coupled to a first node. The high-pass filter is coupled between the first node and a second node. The second inverter has an input terminal coupled to the second node, and an output terminal coupled to an output node of the pre-driver. The high-pass filter is configured to improve a high-frequency response of the pre-driver.
摘要:
A level shift circuit configured to generate an output signal having higher amplitude than that of an input signal. The level shift circuit includes serially-connected first and second level shift circuit for two-step amplitude increase of the input signal. The first level shift circuit includes first to fourth transistors, each of which has a control terminal and first and second current terminals, and first and second resistance elements respectively connected between the first and third transistors, and between the second and fourth transistors. A potential difference between two ends of each resistance element is respectively smaller than, or no smaller than, a respective predetermined potential difference when a current does not flow, or flows, therethrough. The second level shift circuit has fifth to tenth transistors, each of which has a control terminal and first and second current terminals. The output signal is outputted through a connection between the second current terminals of the fifth and ninth transistors.
摘要:
A transistor includes a source region, a drain region, a channel region, a gate electrode and a layer of a stress-creating material. The stress-creating material provides a stress that is variable in response to a signal acting on the stress-creating material. The layer of stress-creating material is arranged to provide a stress in at least the channel region. The stress provided in at least the channel region is variable in response to the signal acting on the stress-creating material. Layers of stress-creating material providing a stress that is variable in response to a signal acting on the stress-creating material may also be used in circuit elements other than transistors, for example, resistors.
摘要:
An integrated circuit and a method are provided. An integrated circuit comprises a first circuit, with a first character and at least one external control signal, and a character control unit. The character control unit controls the at least one external control signal and has a second circuit, with a second character essentially proportional to the first character, a character adjuster for adjusting the at least one external control signal, and a character monitor for monitoring the operation behavior of the second circuit to control the character adjuster to adjust the at least one external control signal accordingly.
摘要:
An integrated circuit of a memory is provided. The integrated circuit comprises a first data driving circuit and a transmitting transistor. The first data driving circuit outputs a first data voltage to a first node. The transmitting transistor is coupled between the first node and a second node. When the transmitting transistor receives a bias voltage and the voltage level of the first node is a first voltage level, the transmitting transistor makes the voltage level of the second node to be set as a third voltage level, third voltage level is close to or substantially equal to the first voltage level. When the transmitting transistor receives the bias voltage and the voltage level of the first node is the second voltage level, the voltage level of the second node is independently of the voltage level of the first node.
摘要:
A method for increasing responding speed and lifespan of a buffer includes detecting an edge of an input signal of the buffer, triggering a pulse signal with a predetermined period according to the detected edge, and driving the buffer for generating an output signal according to the pulse signal and the input signal.
摘要:
A method for increasing responding speed and lifespan of a buffer includes detecting an edge of an input signal of the buffer, triggering a pulse signal with a predetermined period according to the detected edge, and driving the buffer for generating an output signal according to the pulse signal and the input signal.
摘要:
A source driver includes four output switches, two resistors, and a charge-sharing switch. The first output switch and the first resistor are coupled in series to a first output channel of the source driver. The second output switch and the second resistor are coupled in series to a second output channel of the source driver. The third output switch is coupled in parallel to the first output switch. The fourth output switch is coupled in parallel to the second output switch. The charge-sharing switch is coupled between the first resistor and the second resistor. The third output switch and the fourth output switch are controlled to adjust the resistance of the output current path of the source driver.