Abstract:
A power generation device includes a thermoelectric conversion part; a cooling member configured to be disposed on one principal surface of the thermoelectric conversion part; and a heat generation part configured to be disposed on another principal surface of the thermoelectric conversion part, to be formed of a viscoelastic body having a plurality of cavities formed in the viscoelastic body, and to generate heat by violation.
Abstract:
An electronic device having a variable capacitance element, includes a support substrate providing physical support, a pair of anchors formed on the support substrate, and having support portions in a direction perpendicular to a surface of the substrate, a movable electrode supported by the support portions of the pair of anchors, having opposing first and second side surfaces constituting electrode surfaces, and at least partially capable of elastic deformation, a first fixed electrode supported above the support substrate, and having a first electrode surface opposing to the first side surface of the movable electrode, and a second fixed electrode supported above the support substrate, and having a second electrode surface opposing to the second side surface of the movable electrode.
Abstract:
An analysis method includes acquiring target data collected at edges; determining first analysis target satisfying a first condition, and specifying a first detection position indicating a position at which the first analysis target is detected at the edges and a first detection time; calculating a correlation coefficient of the feature amount; specifying a first range of the first detection position and a second range of the first detection time of the analysis target for which the correlation coefficient satisfies a predetermined relationship; determining second analysis target satisfying a second condition, and specifying a second detection position and a second detection time; determining whether the analysis target in which the second detection position is included in the first range and the second detection time; and acquiring any one of the analysis target from the edges when it is determined that the analysis target is included.
Abstract:
The present invention relates to a thermoelectric conversion element and a method for manufacturing the same and relates to suppression of breakage and deterioration of the thermoelectric conversion element due to partial pressurization from the vertical direction. This thermoelectric conversion element has: at least one n-type semiconductor body; at least one p-type semiconductor body; a first connecting electrode; a first out-put electrode for n-side output; and a second output electrode for p-side output, wherein areas of respective joint sections of the n-type semiconductor body with the first connecting electrode, the first output electrode, and the second output electrode and of the p-type semiconductor body with the first connecting electrode, the first output electrode, and the second output electrode are greater than respective cross-sectional areas in other positions, in an axial direction, of the n-type semiconductor body and the p-type semiconductor body.
Abstract:
There is provided a sensor system capable of being used semi-permanently in a maintenance-free state without exchanging batteries as well as being installed in an already-existing manhole lid by a simple work on the spot, and having a measurement unit, a power source unit, and a communication unit, and installed in a manhole lid, wherein the power source unit includes a thermoelectric power generation module configured to generate electric power by a difference in temperature between a first heat transfer unit thermally connected to the manhole lid and a second heat transfer unit thermally connected to a heat radiating unit within a manhole, and the measurement unit and the communication unit are driven by electric power generated by the thermoelectric power generation module and measurement data of the measurement unit is transmitted to the outside via the communication unit.
Abstract:
The invention relates to a semiconductor device, a method for manufacturing a semiconductor device and an electronic thermoelectric power generation device, a semiconductor device having a thermoelectric conversion element that is embedded in a semiconductor chip so as to be integrated with a semiconductor circuit can be implemented. A semiconductor substrate is provided with a through opening for a region in which a thermoelectric conversion element is to be formed, and a thermoelectric conversion element is embedded in the through opening, where the thermoelectric conversion element includes: a number of penetrating rods made of a thermoelectric conversion material; and an insulating reinforcement layer in which the penetrating rods are embedded and of which the thermal conductivity is lower than that of the thermoelectric conversion material.
Abstract:
A microchannel cooling device includes a heat sink having a liquid refrigerant flow channel having a microscopic cross section and connected to a heat source thermally, and a thermoelectric element provided on the heat sink and extending parallel to a direction of extension of the liquid refrigerant flow channel.