公开(公告)号：US12105046B2

公开(公告)日：2024-10-01

申请号：US18207051

申请日：2023-06-07

申请人： FUJITSU LIMITED

发明人： Satoru Momose ,  Osamu Tsuboi ,  Ikuo Soga

IPC分类号： G01N27/407 ,  G01N27/406

CPC分类号： G01N27/4071 ,  G01N27/4073 ,  G01N27/4065

摘要： A gas sensor which includes a solid electrolyte layer including positive charge carriers to which detection-target gas coordinates, an electrode arranged on part of a plane of the solid electrolyte layer, and a unit configured to accelerate movements of the positive charge carriers.

公开(公告)号：US20210278357A1

公开(公告)日：2021-09-09

申请号：US17327825

申请日：2021-05-24

申请人： FUJITSU LIMITED

发明人： Satoru Momose ,  Michio USHIGOME ,  Kazuaki Karasawa ,  Osamu Tsuboi

IPC分类号： G01N27/12 ,  G01N33/84 ,  G01N33/497

摘要： A gas sensor device includes a first electrode, a second electrode, and a polythiophene film which is formed between the first and second electrodes to be electrically coupled to the first and second electrodes, and to which cuprous bromide is adsorbed.

公开(公告)号：US20180038822A1

公开(公告)日：2018-02-08

申请号：US15668422

申请日：2017-08-03

申请人： FUJITSU LIMITED

发明人： Satoru Momose ,  Michio USHIGOME ,  Osamu Tsuboi

IPC分类号： G01N27/407 ,  C01G3/02 ,  C01G3/04

摘要： A gas sensor device has a crystalline film of copper(I) bromide, wherein a crystal surface of the copper(I) bromide is formed of a stepped terrace having a flat face and a steep slope.

公开(公告)号：US20170299536A1

公开(公告)日：2017-10-19

申请号：US15466384

申请日：2017-03-22

申请人： FUJITSU LIMITED

发明人： Osamu Tsuboi ,  Satoru Momose ,  Michio USHIGOME ,  Kazuaki Karasawa ,  Ryozo Takasu

IPC分类号： G01N27/12 ,  G01N33/497

CPC分类号： G01N27/125 ,  G01N27/123 ,  G01N33/497

摘要： A gas analyzer including: a chamber; a first gas sensor provided in the chamber and including a first gas sensitive member; a second gas sensor provided in the chamber and including a second gas sensitive member; and a detector that detects each of resistance changes of the first and the second gas sensitive members; wherein the first gas sensitive member is an oxide semiconductor mainly composed of at least one of Sn, W, Zn and In or a semiconductor mainly composed of C, and the second gas sensitive member is mainly composed of a halide or an oxide of Cu or Ag.

公开(公告)号：US09601680B2

公开(公告)日：2017-03-21

申请号：US14251834

申请日：2014-04-14

申请人： FUJITSU LIMITED

发明人： Norinao Kouma ,  Osamu Tsuboi

IPC分类号： H01L35/00 ,  H01L35/34 ,  H01L37/00 ,  H01L35/32

CPC分类号： H01L35/32 ,  H01L35/34

摘要： The present invention relates to a thermoelectric conversion element and a method for manufacturing the same and relates to suppression of breakage and deterioration of the thermoelectric conversion element due to partial pressurization from the vertical direction. This thermoelectric conversion element has: at least one n-type semiconductor body; at least one p-type semiconductor body; a first connecting electrode; a first out-put electrode for n-side output; and a second output electrode for p-side output, wherein areas of respective joint sections of the n-type semiconductor body with the first connecting electrode, the first output electrode, and the second output electrode and of the p-type semiconductor body with the first connecting electrode, the first output electrode, and the second output electrode are greater than respective cross-sectional areas in other positions, in an axial direction, of the n-type semiconductor body and the p-type semiconductor body.

公开(公告)号：US09581621B2

公开(公告)日：2017-02-28

申请号：US13667213

申请日：2012-11-02

申请人： FUJITSU LIMITED

发明人： Osamu Tsuboi ,  Hiromitsu Soneda ,  Fumihiko Nakazawa

IPC分类号： G01R19/00 ,  G01R15/20 ,  G01R21/06

CPC分类号： G01R19/0092 ,  G01R15/202 ,  G01R21/06

摘要： A method of calculating a current correction formula may include first measuring voltage values at each of current measuring parts configured to measure currents in socket parts of a power strip in a state in which no current flows in the socket parts, second measuring the voltage values at each of the current measuring parts in a state in which a current flows in one of the socket parts, and calculating a correction formula formed by a inverse matrix of a matrix having as its elements differences between the voltage values measured by the second measuring and the voltage values measured by the first measuring.

摘要翻译： 计算当前校正公式的方法可以包括：在电流测量部件中的每一个上测量电压值的第一测量电压值，该电流测量部件被配置为在电流条中没有电流在插座部分中流动的状态下测量电源板的插座部分中的电流， 电流测量部分中的每一个处于电流在一个插座部分中流动的状态，并且计算由具有作为其元素的矩阵的逆矩阵形成的校正公式，所述矩阵具有由第二测量和 通过第一次测量测量的电压值。

公开(公告)号：US09534592B2

公开(公告)日：2017-01-03

申请号：US13953270

申请日：2013-07-29

申请人： FUJITSU LIMITED

发明人： Osamu Tsuboi ,  Yoshihiro Mizuno ,  Norinao Kouma

IPC分类号： F04B43/04 ,  H01H37/58 ,  H02N10/00 ,  F03G7/06 ,  F04B19/00

CPC分类号： F04B43/043 ,  F03G7/06 ,  F04B19/006 ,  H01H37/58 ,  H02N10/00

摘要： An actuator includes a first part having a magnetomotive element and configured to absorb heat up to at least a first temperature; a second part arranged so as to face the first part; a temperature-sensitive magnetic body provided between the first part and the second part and configured to move between a first position for contact with the first part and a second position for contact with the second part, the temperature-sensitive magnetic body having a Curie point lower than the first temperature and higher than a temperature of the second part; and a restoring part configured to restore the temperature-sensitive magnetic body from the first position to the second position.

摘要翻译： 致动器包括具有磁动元件的第一部件，并且被配置为将热量吸收至少至少第一温度; 布置成面对第一部分的第二部分; 设置在所述第一部分和所述第二部分之间并且构造成在与所述第一部分接触的第一位置和与所述第二部分接触的第二位置之间移动的感温磁体，所述感温磁体具有居里点 低于第一温度并高于第二部分的温度; 以及恢复部，被配置为将所述感温磁体从所述第一位置恢复到所述第二位置。

公开(公告)号：US09252070B2

公开(公告)日：2016-02-02

申请号：US14041073

申请日：2013-09-30

申请人： FUJITSU LIMITED

发明人： Yoshihiro Mizuno ,  Norinao Kouma ,  Osamu Tsuboi

IPC分类号： H01L23/46 ,  H01L23/473 ,  H01L25/065 ,  H01L25/00

CPC分类号： H01L23/46 ,  H01L23/473 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/50 ,  H01L2225/06551 ,  H01L2225/06589 ,  H01L2924/0002 ,  H01L2924/00

摘要： A three-dimensional mounting semiconductor device includes a layer structure including a plurality of first substrates with a trench-shaped concavity formed in and a plurality of second substrates with semiconductor elements formed in, which are alternately stacked, wherein an unevenness defined by a size difference between the first substrate and the second substrate is formed on a side surface, and a first through-hole are defined by an inside surface of the trench-shaped concavity and a surface of the second substrate, and a third substrate jointed to the side surface of the layer structure and having an unevenness formed on a surface jointed to the layer structure which are engaged with the unevenness formed on the side surface of the layer structure.

摘要翻译： 三维安装半导体器件包括：层结构，其包括形成有沟槽状凹部的多个第一基板和形成有交替层叠的半导体元件的多个第二基板，其中由尺寸差异限定的不平坦部 第一基板和第二基板之间形成在侧面上，并且第一通孔由沟槽状凹部的内表面和第二基板的表面限定，第三基板与侧面 并且具有形成在与形成在层结构的侧表面上的凹凸接合的层结构的表面上的凹凸。

公开(公告)号：US20160013140A1

公开(公告)日：2016-01-14

申请号：US14857946

申请日：2015-09-18

申请人： FUJITSU LIMITED

发明人： Osamu Tsuboi ,  Ikuo Soga ,  Tamotsu YAMAMOTO

IPC分类号： H01L23/58 ,  H01L29/786 ,  H01M10/42 ,  H01L27/28 ,  H01L29/66 ,  H01L27/12 ,  H01L51/05

CPC分类号： H01L23/58 ,  H01L21/568 ,  H01L24/18 ,  H01L24/20 ,  H01L24/96 ,  H01L25/16 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/283 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869 ,  H01L35/32 ,  H01L51/0545 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2924/12032 ,  H01L2924/1306 ,  H01L2924/15788 ,  H01L2924/19105 ,  H01M2/1066 ,  H01M10/052 ,  H01M10/0562 ,  H01M10/4257 ,  H01M2010/4271 ,  H01M2220/10 ,  H01M2220/30 ,  H01L2924/00

摘要： An electronic device includes: a substrate; a first all-solid-state secondary cell provided on the substrate, the first all-solid-state secondary cell including a first electrode layer, a solid electrolyte layer, and a second electrode layer; a first transistor including a first source drain, a second source drain electrically connected to the second electrode layer, and a first gate electrode; a first terminal electrically connected to the first electrode layer; a second terminal to control a potential of the first gate electrode; a third terminal electrically connected to the first source drain; and a sealing layer covering the first all-solid-state secondary cell and the first transistor, wherein the first terminal, the second terminal, and the third terminal are exposed on an upper surface of the sealing layer.

摘要翻译： 电子设备包括：基板; 设置在所述基板上的第一全固体二次电池，所述第一全固体二次电池包括第一电极层，固体电解质层和第二电极层; 第一晶体管，包括第一源极漏极，与第二电极层电连接的第二源极漏极和第一栅极电极; 电连接到第一电极层的第一端子; 用于控制第一栅电极的电位的第二端子; 电连接到第一源极漏极的第三端子; 以及覆盖第一全固体二次电池和第一晶体管的密封层，其中第一端子，第二端子和第三端子在密封层的上表面上露出。

公开(公告)号：US20150153237A1

公开(公告)日：2015-06-04

申请号：US14613834

申请日：2015-02-04

申请人： FUJITSU LIMITED

发明人： Osamu Tsuboi ,  NORINAO KOUMA

IPC分类号： G01K7/02 ,  H01L35/32

CPC分类号： G01K7/02 ,  G08C17/02 ,  H01L35/32 ,  H02N2/186 ,  H02N11/002

摘要： A power generation device includes a thermoelectric conversion part; a cooling member configured to be disposed on one principal surface of the thermoelectric conversion part; and a heat generation part configured to be disposed on another principal surface of the thermoelectric conversion part, to be formed of a viscoelastic body having a plurality of cavities formed in the viscoelastic body, and to generate heat by violation.

摘要翻译： 发电装置包括热电转换部; 被配置为设置在所述热电转换部的一个主表面上的冷却部件; 以及发热部，其被配置为设置在所述热电转换部的另一主面上，由具有形成在所述粘弹性体中的多个空腔的粘弹性体形成，并且通过违规发热。