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公开(公告)号：US20080145539A1
公开(公告)日：2008-06-19
申请号：US12068710
申请日：2008-02-11
IPC分类号： B05D3/02
CPC分类号： G03F7/40 , H01L21/0273
摘要： It is disclosed a method of forming fine patterns comprising: subjecting a substrate having photoresist patterns to a hydrophilic treatment, covering the substrate having photoresist patterns with an over-coating agent for forming fine patterns, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between adjacent photoresist patterns is lessened by the resulting thermal shrinking action, and removing the over-coating agent substantially completely.
摘要翻译： 公开了一种形成精细图案的方法，包括：对具有光致抗蚀剂图案的基板进行亲水处理，用用于形成精细图案的过涂层覆盖具有光致抗蚀剂图案的基板，进行热处理以引起过热， 使得相邻的光致抗蚀剂图案之间的间隔由于所得的热收缩作用而减轻，并且基本上完全除去覆盖剂。
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2.发明授权Agent for forming coating for narrowing patterns and method for forming fine pattern using the same 有权用于形成缩小图案的涂层剂和使用其形成精细图案的方法公开(公告)号：US07235345B2
公开(公告)日：2007-06-26
申请号：US10471772
申请日：2002-11-05
IPC分类号： G03C5/00
CPC分类号： G03F7/40
摘要： It is disclosed an over-coating agent for forming fine patterns which is applied to cover a substrate having photoresist patterns thereon and allowed to shrink under heat so that the spacing between the adjacent photoresist patterns is lessened, further characterized by containing a water-soluble polymer and a surfactant. Also disclosed is a method of forming fine-line patterns using the over-coating agent. According to the invention, one can obtain fine-line patterns which exhibit good profiles while satisfying the characteristics required of semiconductor devices, being excellent in controlling the dimension of patterns.
摘要翻译： 公开了一种用于形成精细图案的过涂层剂，其用于覆盖其上具有光刻胶图案的基材并在加热下使其收缩，使得相邻的光致抗蚀剂图案之间的间隔减小，其特征还在于含有水溶性聚合物 和表面活性剂。 还公开了使用过涂层剂形成细线图案的方法。 根据本发明，可以获得在满足半导体器件所要求的特性的情况下具有良好外形的精细线图形，并且控制图案的尺寸是优异的。
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3.发明申请公开(公告)号：US20060258809A1
公开(公告)日：2006-11-16
申请号：US11487330
申请日：2006-07-17
CPC分类号： G03F7/40 , G03F7/0035
摘要： It is disclosed an over-coating agent for forming fine-line patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, with the applied film of the over-coating agent being removed substantially completely to form or define fine trace patterns, further characterized by containing a copolymer or a mixture of polyvinyl alcohol with a water-soluble polymer other than polyvinyl alcohol. Also disclosed is a method of forming fine-line patterns using the over-coating agent. According to the invention, one can effectively increase the shrinkage amount (the amount of heat shrinking) of the agent, thereby achieving a remarkably improved effect of forming or defining fine-line patterns and which also present satisfactory profiles and meet the characteristics required of today's semiconductor devices.
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公开(公告)号：US20060003601A1
公开(公告)日：2006-01-05
申请号：US11207807
申请日：2005-08-22
IPC分类号： H01L21/31 , H01L21/44 , G03C5/00 , H01L21/3205
CPC分类号： G03F7/40 , H01L21/0273
摘要： It is disclosed a method of forming fine patterns comprising: subjecting a substrate having photoresist patterns to a hydrophilic treatment, covering the substrate having photoresist patterns with an over-coating agent for forming fine patterns, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between adjacent photoresist patterns is lessened by the resulting thermal shrinking action, and removing the over-coating agent substantially completely.
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5.发明授权Over-coating agent for forming fine patterns and a method of forming fine patterns using such agent 有权用于形成精细图案的过涂层剂和使用这种试剂形成精细图案的方法公开(公告)号：US08124318B2
公开(公告)日：2012-02-28
申请号：US12862130
申请日：2010-08-24
CPC分类号： G03F7/40 , H01L2051/0063
摘要： It is disclosed an over-coating agent for forming fine patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, with the applied film of the over-coating agent being removed substantially completely to form or define fine trace patterns, further characterized by containing either a water-soluble polymer and an amide group-containing monomer or a water-soluble polymer which contains at least (meth)acrylamide as a monomeric component. Also disclosed is a method of forming fine-line patterns using any one of said over-coating agents. According to the invention, the thermal shrinkage of the over-coating agent for forming fine patterns in the heat treatment can be extensively increased, and one can obtain fine-line patterns which exhibit good profiles while satisfying the characteristics required of semiconductor devices.
摘要翻译： 公开了一种用于形成精细图案的覆盖剂，其用于覆盖其上具有光致抗蚀剂图案的基底并且允许在加热下收缩，使得相邻的光致抗蚀剂图案之间的间隔被减小，涂覆剂的涂布膜 基本上完全除去以形成或限定精细痕迹图案，其特征还在于含有水溶性聚合物和含酰胺基的单体或至少含有（甲基）丙烯酰胺作为单体组分的水溶性聚合物。 还公开了使用任何一种所述覆盖剂形成细线图案的方法。 根据本发明，可以广泛地提高用于在热处理中形成精细图案的外涂剂的热收缩率，并且可以获得在满足半导体器件所需的特性的情况下具有良好外形的细线图案。
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6.发明申请OVER-COATING AGENT FOR FORMING FINE PATTERNS AND A METHOD OF FORMING FINE PATTERNS USING SUCH AGENT 有权用于形成精细图案的超涂层剂和使用这种代理形成精细图案的方法公开(公告)号：US20100316802A1
公开(公告)日：2010-12-16
申请号：US12862130
申请日：2010-08-24
CPC分类号： G03F7/40 , H01L2051/0063
摘要： It is disclosed an over-coating agent for forming fine patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, with the applied film of the over-coating agent being removed substantially completely to form or define fine trace patterns, further characterized by containing either a water-soluble polymer and an amide group-containing monomer or a water-soluble polymer which contains at least (meth)acrylamide as a monomeric component. Also disclosed is a method of forming fine-line patterns using any one of said over-coating agents. According to the invention, the thermal shrinkage of the over-coating agent for forming fine patterns in the heat treatment can be extensively increased, and one can obtain fine-line patterns which exhibit good profiles while satisfying the characteristics required of semiconductor devices.
摘要翻译： 公开了一种用于形成精细图案的覆盖剂，其用于覆盖其上具有光致抗蚀剂图案的基底并且允许在加热下收缩，使得相邻的光致抗蚀剂图案之间的间隔被减小，涂覆剂的涂布膜 基本上完全除去以形成或限定精细痕迹图案，其特征还在于含有水溶性聚合物和含酰胺基的单体或至少含有（甲基）丙烯酰胺作为单体组分的水溶性聚合物。 还公开了使用任何一种所述覆盖剂形成细线图案的方法。 根据本发明，可以广泛地提高用于在热处理中形成精细图案的外涂剂的热收缩率，并且可以获得在满足半导体器件所需的特性的情况下具有良好外形的细线图案。
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公开(公告)号：US20100272909A1
公开(公告)日：2010-10-28
申请号：US12830584
申请日：2010-07-06
IPC分类号： B05D3/02
CPC分类号： G03F7/0035 , G03F7/40 , H01L21/0277
摘要： It is disclosed a method of forming fine patterns comprising repeating plural times the following course of steps: covering a substrate having thereon photoresist patterns with an over-coating agent for forming fine patterns, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between the adjacent photoresist patterns is lessened by the resulting thermal shrinking action, and removing the over-coating agent. The invention provides a method of forming fine patterns which has high ability to control pattern dimensions and provide fine patterns that have a satisfactory profile and satisfy the characteristics required of semiconductor devices, even in the case of employing a substrate having thick-film photoresist patterns in a thickness of about 1.0 μm or more.
摘要翻译： 公开了一种形成精细图案的方法，其包括多次重复以下步骤：用用于形成精细图案的过涂层覆盖其上具有光致抗蚀剂图案的基材，进行热处理以引起外涂层的热收缩 使得相邻的光致抗蚀剂图案之间的间隔由于所得到的热收缩作用而减轻，并且除去覆盖剂。 本发明提供一种形成精细图案的方法，其具有很高的控制图案尺寸的能力，并且提供具有令人满意的轮廓并且满足半导体器件所要求的特性的精细图案，即使在使用具有厚膜光致抗蚀剂图案的基板的情况下 约1.0μm以上的厚度。
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8.发明申请Over-coating agent for forming fine patterns and a method of forming fine patterns using such agent 审中-公开用于形成精细图案的过涂层剂和使用这种试剂形成精细图案的方法公开(公告)号：US20090126855A1
公开(公告)日：2009-05-21
申请号：US12318899
申请日：2009-01-12
CPC分类号： G03F7/40 , H01L21/0273 , H01L21/0338 , H01L21/31144
摘要： It is disclosed an over-coating agent for forming fine-line patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, further characterized by comprising a water-soluble polymer which contains at least methacrylic acid and/or methyl methacrylate as the constitutive monomer thereof. Also disclosed is a method of forming fine-line patterns using the over-coating agent. The advantages of the invention are that the exposure margin is large, that the dimension control of photoresist patterns can be reflected on the dimension controllability in forming fine-line patterns, that the dimension control and planning of forming fine trace patterns after treatment for thermal shrinkage can be attained with ease in the stage of photoresist patterning, that the original photoresist pattern profile can be kept as such and the top of the photoresist pattern is not rounded after thermal shrinkage, that the degree of thermal shrinkage of the over-coating agent is large and thus the agent is effective in forming fine-line patterns.
摘要翻译： 公开了一种用于形成细线图案的过涂层剂，其用于覆盖其上具有光致抗蚀剂图案的基材并且允许在加热下收缩，使得相邻光致抗蚀剂图案之间的间隔减小，其特征还在于包含水溶性 至少含有甲基丙烯酸和/或甲基丙烯酸甲酯作为其组成单体的聚合物。 还公开了使用过涂层剂形成细线图案的方法。 本发明的优点在于曝光裕度大，光刻胶图案的尺寸控制可以反映在形成细线图案的尺寸可控性上，尺寸控制和规划在热收缩处理后形成精细痕迹图案 可以在光致抗蚀剂图案化阶段容易地获得，原始光致抗蚀剂图案轮廓可以保持原样，并且光致抗蚀剂图案的顶部在热收缩之后不是圆形的，因此外涂层的热收缩程度是 因此该试剂在形成细线图案方面是有效的。
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9.发明申请Over-coating agent for forming fine patterns and a method of forming fine patterns using such agent 审中-公开用于形成精细图案的过涂层剂和使用这种试剂形成精细图案的方法公开(公告)号：US20060079628A1
公开(公告)日：2006-04-13
申请号：US11282702
申请日：2005-11-21
IPC分类号： C08L29/04
CPC分类号： G03F7/40 , G03F7/0046
摘要： It is disclosed an over-coating agent for forming fine patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, with the applied film of the over-coating agent being removed substantially completely to form or define fine trace patterns, further characterized by containing a water-soluble polymer and a water-soluble fluorine compound (e.g. a fluoroalkyl alcohol or a fluoroalkyl carboxylic acid). Also disclosed is a method of forming fine-line patterns using the over-coating agent. According to the invention, one can reduce microfoaming and defects to produce fine-line patterns that have good leveling and coating properties and which also present satisfactory profiles and meet the characteristics required of today's semiconductor devices.
摘要翻译： 公开了一种用于形成精细图案的覆盖剂，其用于覆盖其上具有光致抗蚀剂图案的基底并且允许在加热下收缩，使得相邻的光致抗蚀剂图案之间的间隔被减小，涂覆剂的涂布膜 基本上完全除去以形成或限定精细痕迹图案，其特征还在于含有水溶性聚合物和水溶性氟化合物（例如氟烷基醇或氟代烷基羧酸）。 还公开了使用过涂层剂形成细线图案的方法。 根据本发明，可以减少微发泡和缺陷，以产生具有良好流平性和涂层性能的细线图案，并且还具有令人满意的轮廓并满足当今半导体器件所需的特性。
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10.发明申请Over-coating agent for forming fine patterns and a method of forming fine patterns using such agent 审中-公开用于形成精细图案的过涂层剂和使用这种试剂形成精细图案的方法公开(公告)号：US20100139838A1
公开(公告)日：2010-06-10
申请号：US12457765
申请日：2009-06-19
CPC分类号： G03F7/40 , G03F7/0046
摘要： It is disclosed an over-coating agent for forming fine patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, with the applied film of the over-coating agent being removed substantially completely to form or define fine trace patterns, further characterized by containing a water-soluble polymer and a water-soluble fluorine compound (e.g. a fluoroalkyl alcohol or a fluoroalkyl carboxylic acid). Also disclosed is a method of forming fine-line patterns using the over-coating agent. According to the invention, one can reduce microfoaming and defects to produce fine-line patterns that have good leveling and coating properties and which also present satisfactory profiles and meet the characteristics required of today's semiconductor devices.
摘要翻译： 公开了一种用于形成精细图案的覆盖剂，其用于覆盖其上具有光致抗蚀剂图案的基底并且允许在加热下收缩，使得相邻的光致抗蚀剂图案之间的间隔被减小，涂覆剂的涂布膜 基本上完全除去以形成或限定精细痕迹图案，其特征还在于含有水溶性聚合物和水溶性氟化合物（例如氟烷基醇或氟代烷基羧酸）。 还公开了使用过涂层剂形成细线图案的方法。 根据本发明，可以减少微发泡和缺陷，以产生具有良好流平性和涂层性能的细线图案，并且还具有令人满意的轮廓并满足当今半导体器件所需的特性。
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