公开(公告)号：US4101772A

公开(公告)日：1978-07-18

申请号：US759870

申请日：1977-01-17

申请人： Fumiya Konishi ,  Kenji Kusao ,  Yoshiaki Yoshioka

发明人： Fumiya Konishi ,  Kenji Kusao ,  Yoshiaki Yoshioka

IPC分类号： B23K15/00 ,  H01J37/301 ,  H01J37/305 ,  A61K27/02

CPC分类号： H01J37/301 ,  H01J37/3053

摘要： The present invention enables a decrease in etching velocity in an ion-beam etching system without decreasing the current density of the ion beam. The ion-etching is performed at a constant value of ion-beam current density and an increased partial pressure of oxygen or other suitable gas in the specimen chamber. The partial pressure of oxygen is increased until the intensity of a secondary ion-beam from the specimen reaches a saturation value. Under these conditions a stable reduced etching velocity is obtained, the value of which is determined by the ion-beam current density, the partial pressure of oxygen and the previously determined characteristics of the specimen.

公开(公告)号：US4298803A

公开(公告)日：1981-11-03

申请号：US112464

申请日：1980-01-16

申请人： Shizuya Matsuura ,  Fumiya Konishi

发明人： Shizuya Matsuura ,  Fumiya Konishi

IPC分类号： G03F7/039 ,  G03F7/20 ,  H01J37/317 ,  H01L21/027 ,  H01J37/06

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/20 ,  G03F7/2022 ,  H01J37/3174 ,  H01J2237/31771

摘要： In a process for projecting or irradiating a pattern on a resist film or the like on a substrate such as a semiconductive wafer, the entire area of the resist film is subjected to a pre-exposure at an intensity less than a sensitivity or a critical exposure level of the resist film at which the resist at a selected (exposed or unexposed) area may be completely dissolved away and then a desired pattern is projected or irradiated on the pre-exposed resist film. These steps may be reversed. In both cases, the apparent sensitivity of the resist film may be improved so that the pattern making time may become very short. An apparatus for carrying out the above process is also disclosed.

摘要翻译： 在用于在诸如半导体晶片的衬底上的抗蚀剂膜等上投影或照射图案的过程中，以小于灵敏度或临界曝光的强度对抗蚀剂膜的整个面积进行预曝光 在所选择的（曝光或未曝光）区域处的抗蚀剂可以完全溶解掉的抗蚀剂膜的水平面，然后将期望的图案投影或照射在预曝光的抗蚀剂膜上。 这些步骤可能会相反。 在这两种情况下，可以提高抗蚀剂膜的表观灵敏度，使得图案制作时间可能变得非常短。 还公开了一种用于执行上述过程的装置。

公开(公告)号：US4189639A

公开(公告)日：1980-02-19

申请号：US878875

申请日：1978-02-17

申请人： Yoshiaki Kai ,  Wataru Sakurai ,  Fumiya Konishi

发明人： Yoshiaki Kai ,  Wataru Sakurai ,  Fumiya Konishi

IPC分类号： G01N27/62 ,  G01T1/29 ,  G01T5/10 ,  H01J49/02 ,  H01J49/26 ,  H01J39/34

CPC分类号： H01J49/025 ,  G01T1/29

摘要： A process for analyzing charged particles wherein charged particles are impinged on a film of resist which is made of polymethylmethacrylate sensitive to charged particles, the resist film is dissolved and the mass of charged particles impinged is measured in terms of the dissolved resist or the resist left.

摘要翻译： 用于分析带电粒子的方法，其中带电粒子撞击由对带电粒子敏感的聚甲基丙烯酸甲酯制成的抗蚀剂膜，抗蚀剂膜被溶解，并且以溶解的抗蚀剂或抗蚀剂留下被测量的带电粒子的质量 。