摘要:
A magneto-optical storage apparatus including an ultra-high density information recording media having an inorganic compound layer 12 on a substrate 11, and in the inorganic compound layer 12, an oxide of at least one kind selected from silicon oxide, aluminum oxide, titanium oxide, tantalum oxide, and zinc oxide exists in an amorphous state at a grain boundary of crystal grain of an oxide of at least one kind selected from cobalt oxide, iron oxide, and nickel oxide. The media has a magnetic layer 13 made of an artificial lattice multilayer obtained by alternately laminating a Co layer or an alloy layer consisting of Co as a main phase and a metal element layer of at least one kind selected from Pt and Pd onto the layer 12. Thus, a distribution of magnetic properties serving as a pinning site of the movement of a magnetic wall in case of recording information to the magnetic layer 13 is formed in the magnetic layer 13.
摘要:
A magnetic recording medium includes a non-magnetic substrate, an inorganic compound layer that is formed on the substrate and which contains a crystalline first oxide and a second oxide, and a magnetic layer that is formed on the inorganic compound layer. The crystalline first oxide comprises at least one oxide selected from cobalt oxide, chromium oxide, iron oxide and nickel oxide. The second oxide comprises at least one oxide selected from silicon oxide, aluminum oxide, titanium oxide, tantalum oxide and zinc oxide. The second oxide is present at a grain boundary of crystal grains of said first oxide. According to the present invention, magnetic recording media low in noise and diminished in thermal fluctuation and thermal decay can be obtained by making fine the crystal grains of a magnetic layer and controlling the dispersion of the grain size. Thus, magnetic recording apparatuses can be realized which can perform an ultrahigh density magnetic recording of higher than 20 Gb/in2.
摘要:
The magnetic recording medium includes an underlayer 12 formed of an inorganic compound layer, and a magnetic layer 13 formed over the underlayer 12. The inorganic compound layer as the underlayer 12 has crystal grains and at least one kind of oxide, the crystal grains having as main elements at least one of cobalt oxide, chromium oxide, iron oxide and nickel oxide, the at least one kind of oxide lying as a non-crystalline phase in grain boundaries between the crystal grains and selected from among silicon oxide, aluminum oxide, titanium oxide, tantalum oxide and zinc oxide.
摘要:
An ultra-high density information recording media has an inorganic compound layer 12 on a substrate 11, and in the inorganic compound layer 12, an oxide of at least one kind selected from silicon oxide, aluminum oxide, titanium oxide, tantalum oxide, and zinc oxide exists in an amorphous state at a grain boundary of crystal grain of an oxide of at least one kind selected from cobalt oxide, iron oxide, and nickel oxide. The media has a magnetic layer 13 made of an artificial lattice multilayer obtained by alternately laminating a Co layer or an alloy layer consisting of Co as a main phase and a metal element layer of at least one kind selected from Pt and Pd onto the layer 12. Thus, a distribution of magnetic properties serving as a pinning site of the movement of a magnetic wall in case of recording information to the magnetic layer 13 is formed in the magnetic layer 13.
摘要:
The magnetic recording medium includes an underlayer 12 formed of an inorganic compound layer, and a magnetic layer 13 formed over the underlayer 12. The inorganic compound layer as the underlayer 12 has crystal grains and at least one kind of oxide, the crystal grains having as main elements at least one of cobalt oxide, chromium oxide, iron oxide and nickel, the at least one kind of oxide lying as a non-crystalline phase in grain boundaries between the crystal grains and selected from among silicon oxide, aluminum oxide, titanium oxide, tantalum oxide and zinc oxide.
摘要:
A glass bonding material contains vanadium and phosphor as main glass components, and comprises in amounts converted as oxides of the elements in the components, 45 to 60% by weight of V2O5, 15 to 30% by weight of P2O5, 5 to 25% by weight of BaO, or contains a glass comprising at least vanadium, phosphor, barium and antimony, wherein the glass comprises in amounts converted as oxides, 15 to 35% by weight of BaO and Sb2O3 in total, and a weight ratio of BaO/Sb2O3 or Sb2O3/BaO is 0.3 or less.
摘要翻译:玻璃结合材料含有钒和磷光体作为主要玻璃组分,其含量以组分中元素的氧化物转化,45至60重量%的V 2 O 5,15至30重量%的P 2 O 5,5至25重量% 或含有至少包含钒,磷,钡和锑的玻璃,其中所述玻璃包含转化为氧化物的量,总计为15〜35重量%的BaO和Sb 2 O 3,BaO / Sb 2 O 3的重量比 或Sb2O3 / BaO为0.3以下。
摘要:
A sealing glass of a low melting point glass composition which is a phosphate glass that contains transition metal wherein the glass contains 15 to 35% of BaO and Sb2O3 (in total) and the ratio by weight of BaO to Sb2O3 or Sb2O3 to BaO is 0.3 or less. Particularly the transition metal is vanadium and the glass contains V2O5 of 45 to 60 wt % as vanadium oxide and P2O5 of 15 to 30 wt % as phosphorus oxide. The bonding material is a mixture of a filler and a vanadate-phosphate glass that contains V2O5 as the main ingredient and the glass contains V2O5 of 45 to 60%, P2O5 of 20 to 30%, BaO of 5 to 15%, TeO2 of 0 to 10%, Sb2O3 of 5 to 10%, and WO3 of 0 to 5%. The particle size of the filler is in the range of 1 to 150 μm and the ratio of filler is 80% by volume or less of the adhesive glass.
摘要翻译:作为含有过渡金属的磷酸盐玻璃的低熔点玻璃组合物的密封玻璃,其中玻璃含有15〜35%的BaO和Sb 2 O 3(在 总计)和BaO与Sb 2 O 3 3或Sb 2 O 3 3重量比与BaO的重量比为 0.3以下。 特别地,过渡金属是钒,并且玻璃含有作为氧化钒的45〜60重量%的V 2 O 5 O 3和P 2 O 2 > 5重量%为15〜30重量%。 接合材料是含有V 2 O 5 O 5作为主要成分的填料和含钒酸盐 - 磷酸盐玻璃的混合物,玻璃含有V 2, 45〜60%,5〜30%的O 2〜30%,5〜15%的BaO,5〜15% 0〜10%的2〜2%,Sb 2 O 3 3 3以上5〜10%,WO 3〜O 3为0〜 5%。 填料的粒径在1〜150μm的范围内,填料的比例为粘合玻璃的80体积%以下。
摘要:
It is an object of the present invention to provide a spacer which has an adequate Young's modulus for a spacer used in an image display panel and allows free adjustment of an electric resistance value, and an image display panel using the spacer. The spacer SPC holds a gap between a back panel PNL1 including a signal line CL, a scanning line GL, and an electronic source ELS provided for the main surface of a back substrate SUB1, and a front panel PNL2 including a fluorescent material PH, a black matrix BM, and an anode AD provided for the main surface of a front substrate SUB2. The spacer comprises phosphate glass including the same transition metal element with different valences. For electrical conduction, the included same transition metal element with different valences allows the use of hopping conduction between transition metal atoms with different valences to perform adjustment of electric resistance relatively easily. The transition metal element is at least one of vanadium (V), tungsten (W), molybdenum (Mo), niobium (Nb), and iron (Fe).
摘要:
The present invention is a semiconductor apparatus having at least a part of a semiconductor device conjugated to a metal material for heat sink via an electric insulating material, wherein said electric insulating material is a bismuth glass layer.
摘要:
A sealing glass of a low melting point phosphate glass composition contains 15 to 35% of BaO and Sb2O3 (in total) and the ratio by weight of BaO to Sb2O3 or Sb2O3 to BaO is 0.3 or less. Particularly the transition metal is vanadium and the glass contains V2O5 of 45 to 60 wt % as vanadium oxide and P2O5 of 15 to 30 wt % as phosphorus oxide. The bonding material is a mixture of a filler and a vanadate-phosphate glass that contains V2O5 of 45 to 60%, P2O5 of 20 to 30%, BaO of 5 to 15%, TeO2 of 0 to 10%, Sb2O3 of 5 to 10%, and WO3 of 0 to 5%. The particle size of the filler is in the range of 1 to 150 μm and the ratio of filler is 80% by volume or less of the adhesive glass.
摘要翻译:低熔点磷酸盐玻璃组合物的密封玻璃包含15〜35%的BaO和Sb 2 O 3(总计),BaO与Sb 2 O 3或Sb 2 O 3与BaO的重量比为0.3以下。 特别地,过渡金属为钒,玻璃中含有作为氧化钒的45〜60重量%的V 2 O 5,氧化磷15〜30重量%的P 2 O 5。 接合材料是填料和钒酸盐 - 磷酸盐玻璃的混合物,其含有45〜60%的V2O5,20〜30%的P2O5,5〜15%的BaO,0〜10%的TeO2,5〜10的Sb2O3 %,WO3为0〜5%。 填料的粒径在1〜150μm的范围内,填料的比例为粘合玻璃的80体积%以下。