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Patent Agency Ranking
公开(公告)号：US12040697B2
公开(公告)日：2024-07-16
申请号：US17607606
申请日：2020-04-29
Inventor： Martin Geske , Hendrik Gloes , Thomas Brueckner
CPC classification number: H02M1/36 , H02M1/08 , H02M1/32 , H02M5/4585
Abstract: A power converter system is described. The system includes a power converter with a first converter including a plurality of semiconductor devices. Each semiconductor device includes at least a controllable semiconductor switch having a threshold voltage and a gate voltage for normal on-state conduction. The first converter has first and second DC terminals connected to a DC circuit, and a plurality of AC terminals. A controller is configured to supply current to the first converter (e.g., from an AC power source) and enable a short circuit state of the first converter by controlling semiconductor switches of the first converter to create at least one short circuit path through the first converter that carries the supplied current. At least one of the semiconductor switches in at least one of the short circuit paths is operated with modified on-state conduction in order to increase conduction losses. A gate driver applies to the semiconductor switch a modified gate voltage that is less than the gate voltage for normal on-state conduction.
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公开(公告)号：US20190199193A1
公开(公告)日：2019-06-27
申请号：US16229733
申请日：2018-12-21
Inventor： Hendrik Gloes , Martin Geske , Piotr Szczupak
IPC: H02M1/08 , H03K17/687
CPC classification number: H02M1/08 , H02M1/44 , H02M7/538 , H02M2001/0054 , H03K17/163 , H03K17/6871
Abstract: A method and a device for controlling a commutation process of a load current between two switching modules are disclosed that each have a MOSFET that can be controlled by a gate-source voltage, and an intrinsic-body inverse diode. To reduce oscillations in the down-commutation of the inverse diodes caused by parasitic circuit parameters, after switching off one of the switching modules, the gate-source control voltage applied to this switching module is temporarily switched off until being increased again the vicinity of the threshold voltage for switching on the MOSFET, before and while the other switching module is switched on, in order to commutate the current from the inverse diode of the one switching module to the MOSFET of the other switching module.
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公开(公告)号：US20220231599A1
公开(公告)日：2022-07-21
申请号：US17607606
申请日：2020-04-29
Inventor： Martin Geske , Hendrik Gloes , Thomas Brueckner
Abstract: A power converter system is described. The system includes a power converter with a first converter including a plurality of semiconductor devices. Each semiconductor device includes at least a controllable semiconductor switch having a threshold voltage and a gate voltage for normal on-state conduction. The first converter has first and second DC terminals connected to a DC circuit, and a plurality of AC terminals. A controller is configured to supply current to the first converter (e.g., from an AC power source) and enable a short circuit state of the first converter by controlling semiconductor switches of the first converter to create at least one short circuit path through the first converter that carries the supplied current. At least one of the semiconductor switches in at least one of the short circuit paths is operated with modified on-state conduction in order to increase conduction losses. A gate driver applies to the semiconductor switch a modified gate voltage that is less than the gate voltage for normal on-state conduction.
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公开(公告)号：US11038438B2
公开(公告)日：2021-06-15
申请号：US16708401
申请日：2019-12-09
Inventor： Hendrik Gloes , Martin Geske , Thomas Brueckner
IPC: H02J3/38 , H02M7/5387 , H02M1/32 , H02M1/36 , H02M7/487
Abstract: An inverter system is described. The inverter system includes a DC power source such as a plurality of photovoltaic (PV) panels, an inverter and a controller. The inverter includes a plurality of semiconductor devices (e.g., controllable semiconductor switches such as IGBTs and anti-parallel connected diodes) arranged in a suitable inverter topology. The inverter includes DC input terminals connected to the PV panels by means of a DC link and at least one AC output terminal. When starting the inverter, the controller is configured to enable a short circuit state of the inverter by controlling the semiconductor switches to create a short circuit between the DC input terminals such that the inverter carries a current substantially equal to the short circuit current of the PV panels. This short circuit current may be used to pre-heat the semiconductor devices of the inverter to reduce failure rates caused by cosmic radiation when the semiconductor devices subsequently experience high blocking voltages during normal operation of the inverter.
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公开(公告)号：US10651719B2
公开(公告)日：2020-05-12
申请号：US16229733
申请日：2018-12-21
Inventor： Hendrik Gloes , Martin Geske , Piotr Szczupak
Abstract: A method and a device for controlling a commutation process of a load current between two switching modules are disclosed that each have a MOSFET that can be controlled by a gate-source voltage, and an intrinsic-body inverse diode. To reduce oscillations in the down-commutation of the inverse diodes caused by parasitic circuit parameters, after switching off one of the switching modules, the gate-source control voltage applied to this switching module is temporarily switched off until being increased again the vicinity of the threshold voltage for switching on the MOSFET, before and while the other switching module is switched on, in order to commutate the current from the inverse diode of the one switching module to the MOSFET of the other switching module.
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