-
公开(公告)号：US11223297B2
公开(公告)日：2022-01-11
申请号：US15755771
申请日：2016-08-22
Inventor： Martin Geske , Duro Basic
Abstract: A modular multipoint power converter for converting an AC voltage to a DC voltage or vice versa, and a method of operating it are provided. The multipoint power converter has a converter branches, whereby two converter branches are connected to each other respectively to form a phase branch of the converter. Each converter branch has a plurality of similar submodules, each of which is formed from a half-bridge circuit with power semiconductor switches. The branch currents through the converter branches are controlled in operation by increasing the DC component of the DC current or the DC intermediate circular current such that a unipolar current flows through the converter branches. As a result, with the same plurality of submodules per converter branch, the transmissible power can be increased, the power semi-conductor elements can be better utilized, or the plurality of submodules can be reduced while the transmissible power remains the same.
-
公开(公告)号：US20220231599A1
公开(公告)日：2022-07-21
申请号：US17607606
申请日：2020-04-29
Inventor： Martin Geske , Hendrik Gloes , Thomas Brueckner
Abstract: A power converter system is described. The system includes a power converter with a first converter including a plurality of semiconductor devices. Each semiconductor device includes at least a controllable semiconductor switch having a threshold voltage and a gate voltage for normal on-state conduction. The first converter has first and second DC terminals connected to a DC circuit, and a plurality of AC terminals. A controller is configured to supply current to the first converter (e.g., from an AC power source) and enable a short circuit state of the first converter by controlling semiconductor switches of the first converter to create at least one short circuit path through the first converter that carries the supplied current. At least one of the semiconductor switches in at least one of the short circuit paths is operated with modified on-state conduction in order to increase conduction losses. A gate driver applies to the semiconductor switch a modified gate voltage that is less than the gate voltage for normal on-state conduction.
-
公开(公告)号：US11038438B2
公开(公告)日：2021-06-15
申请号：US16708401
申请日：2019-12-09
Inventor： Hendrik Gloes , Martin Geske , Thomas Brueckner
IPC: H02J3/38 , H02M7/5387 , H02M1/32 , H02M1/36 , H02M7/487
Abstract: An inverter system is described. The inverter system includes a DC power source such as a plurality of photovoltaic (PV) panels, an inverter and a controller. The inverter includes a plurality of semiconductor devices (e.g., controllable semiconductor switches such as IGBTs and anti-parallel connected diodes) arranged in a suitable inverter topology. The inverter includes DC input terminals connected to the PV panels by means of a DC link and at least one AC output terminal. When starting the inverter, the controller is configured to enable a short circuit state of the inverter by controlling the semiconductor switches to create a short circuit between the DC input terminals such that the inverter carries a current substantially equal to the short circuit current of the PV panels. This short circuit current may be used to pre-heat the semiconductor devices of the inverter to reduce failure rates caused by cosmic radiation when the semiconductor devices subsequently experience high blocking voltages during normal operation of the inverter.
-
Patent Agency Ranking
公开(公告)号：US10651719B2
公开(公告)日：2020-05-12
申请号：US16229733
申请日：2018-12-21
Inventor： Hendrik Gloes , Martin Geske , Piotr Szczupak
Abstract: A method and a device for controlling a commutation process of a load current between two switching modules are disclosed that each have a MOSFET that can be controlled by a gate-source voltage, and an intrinsic-body inverse diode. To reduce oscillations in the down-commutation of the inverse diodes caused by parasitic circuit parameters, after switching off one of the switching modules, the gate-source control voltage applied to this switching module is temporarily switched off until being increased again the vicinity of the threshold voltage for switching on the MOSFET, before and while the other switching module is switched on, in order to commutate the current from the inverse diode of the one switching module to the MOSFET of the other switching module.
-
公开(公告)号：US12040697B2
公开(公告)日：2024-07-16
申请号：US17607606
申请日：2020-04-29
Inventor： Martin Geske , Hendrik Gloes , Thomas Brueckner
CPC classification number: H02M1/36 , H02M1/08 , H02M1/32 , H02M5/4585
Abstract: A power converter system is described. The system includes a power converter with a first converter including a plurality of semiconductor devices. Each semiconductor device includes at least a controllable semiconductor switch having a threshold voltage and a gate voltage for normal on-state conduction. The first converter has first and second DC terminals connected to a DC circuit, and a plurality of AC terminals. A controller is configured to supply current to the first converter (e.g., from an AC power source) and enable a short circuit state of the first converter by controlling semiconductor switches of the first converter to create at least one short circuit path through the first converter that carries the supplied current. At least one of the semiconductor switches in at least one of the short circuit paths is operated with modified on-state conduction in order to increase conduction losses. A gate driver applies to the semiconductor switch a modified gate voltage that is less than the gate voltage for normal on-state conduction.
-
公开(公告)号：US10367407B2
公开(公告)日：2019-07-30
申请号：US15665684
申请日：2017-08-01
Inventor： Martin Geske
Abstract: A method and a device for controlling a voltage-controlled power semiconductor switch that can be switched off again, which has a first and a second connection and a control connection and which is conductive in the switched on state between the first and the second connection is provided. Firstly, a first control voltage comprising a first value is applied to the control connection to switch on the power semiconductor switch. Subsequently, conditions are detected, which indicate the progress of the switch-on procedure of the power semiconductor switch. As soon as conditions are detected, which are indicative of the fact that the switch-on procedure is deemed to be complete, a second control voltage comprising a second value higher than the first value is applied to the control connection to operate the power semiconductor switch in the conductive state with a higher control voltage to reduce its conduction losses.
-
公开(公告)号：US10938317B2
公开(公告)日：2021-03-02
申请号：US15618862
申请日：2017-06-09
Inventor： Martin Geske , Joerg Janning
IPC: H02M7/219 , H02M1/32 , H02M7/483 , H02M7/5387
Abstract: A double submodule for a modular multilevel converter comprising a first and second submodule coupled to the first. Each submodule comprises an asymmetric H bridge circuit with two parallel bridges branches, connected between a first and a second direct voltage node of the submodule. Each bridge branch is formed by a series connection from a controllable power semiconductor switch and a diode. A storage capacitor is connected in parallel to the asymmetric H bridge circuit between the first and the second direct voltage node of the submodule. The first and the second submodule are interconnected in such a way that a power semiconductor switch or a diode is part of a bridge branch of the first submodule as well as part of a bridge branch of the second submodule. A modular multilevel converter, comprises a series connection of such double submodules in each of its converter branches, is also disclosed.
-
公开(公告)号：US20190199193A1
公开(公告)日：2019-06-27
申请号：US16229733
申请日：2018-12-21
Inventor： Hendrik Gloes , Martin Geske , Piotr Szczupak
IPC: H02M1/08 , H03K17/687
CPC classification number: H02M1/08 , H02M1/44 , H02M7/538 , H02M2001/0054 , H03K17/163 , H03K17/6871
Abstract: A method and a device for controlling a commutation process of a load current between two switching modules are disclosed that each have a MOSFET that can be controlled by a gate-source voltage, and an intrinsic-body inverse diode. To reduce oscillations in the down-commutation of the inverse diodes caused by parasitic circuit parameters, after switching off one of the switching modules, the gate-source control voltage applied to this switching module is temporarily switched off until being increased again the vicinity of the threshold voltage for switching on the MOSFET, before and while the other switching module is switched on, in order to commutate the current from the inverse diode of the one switching module to the MOSFET of the other switching module.
-
-
-
-
-
-
-
Search Results
8
records
(took 0.018 seconds)
