公开(公告)号：US3689991A

公开(公告)日：1972-09-12

申请号：US3689991D

申请日：1970-03-06

Applicant: GEN ELECTRIC

Inventor： AIRD ALANSON D

IPC: H01L21/48 ,  H01L21/60 ,  H01L23/495 ,  H01L7/00

CPC classification number: H01L24/50 ,  H01L21/4839 ,  H01L23/49524 ,  H01L23/49568 ,  H01L23/49572 ,  H01L2224/32245 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/1305 ,  H01L2924/14 ,  Y10T29/49121 ,  H01L2924/00

Abstract: Semiconductor devices such as transistors are manufactured by use of a longitudinally extending tape-like carrier including a metallic layer secured to a flexible insulative layer, with the insulative layer having centrally located longitudinally spaced apertures. These apertures are covered by the metallic layer and are dimensioned to encompass contact regions of a semiconductor body such as a transistor or monolithic integrated circuit pellet. Longitudinally spaced sets of finger-like leads are formed from the metallic layer with the inner portions of the leads of each set extending cantilever-wise within the periphery of a respective adjacent aperture for registry with the contact portions of a semiconductor pellet. The leads of each set are connected to the contacts of a pellet registered with the adjacent aperture, the respective pellets and portions of the leads connected thereto are encapsulated, and the carrier may be reeled or otherwise automatically handled, with individual devices obtainable by severance from the carrier.

Abstract translation: 诸如晶体管的半导体器件通过使用纵向延伸的带状载体制造，该载体包括固定到柔性绝缘层的金属层，绝缘层具有位于中心的纵向间隔开的孔。 这些孔被金属层覆盖，并且尺寸设计成包括诸如晶体管或单片集成电路芯片的半导体本体的接触区域。 从金属层形成纵向间隔的一组指状的引线，其中各组的引线的内部在相应的相邻孔的周边内悬臂延伸，以与半导体芯片的接触部分对准。 每组的引线连接到与相邻孔径注册的颗粒的触点，各个颗粒和与其连接的引线的部分被封装，并且载体可以被卷绕或以其他方式自动处理，其中可以通过从 承运人

公开(公告)号：US3893229A

公开(公告)日：1975-07-08

申请号：US41064073

申请日：1973-10-29

Applicant: GEN ELECTRIC

Inventor： AIRD ALANSON D

IPC: H01L31/00 ,  H01L33/00 ,  H01L33/38 ,  H01L33/40 ,  B01J17/00

CPC classification number: H01L33/40 ,  H01L31/00 ,  H01L33/00 ,  H01L33/38

Abstract: A layer of titanium is deposited on a glass substrate and a layer of gold is deposited over the layer of titanium. The titanium layer is approximately 100 to 1,000 A thick and the gold layer is approximately 5,000 to 15,000 A, thick. The goldtitanium layer is then masked and etched so that a selected portion of the glass substrate is exposed. The selected portion has dimensions slightly smaller than those of the surface of the N-layer of a gallium arsenide light-emitting diode pellet. A layer of germanium approximately 1,000 to 5,000 A thick is deposited over the gold-titanium layer and is masked and etched so that it, too, exposes the selected portion of the glass substrate. The light-emitting diode pellet is placed with the peripheral portion of the surface of its N-layer in overlapping contact with the germanium layer and the remainder of the surface of the N-layer in registry with the selected portion of the substrate. The light-emitting diode is then pressed against the germanium layer for several seconds at an elevated temperature sufficient to form a gold-germanium alloy which bonds the pellet to the titanium.

Abstract translation: 一层钛沉积在玻璃基底上，一层金沉积在钛层上。 钛层的厚度约为100至1000埃，金层的厚度约为5,000至15,000埃。 然后对金 - 钛层进行掩模和蚀刻，使得玻璃基板的选定部分被暴露。 所选择的部分的尺寸略小于砷化镓发光二极管芯片的N层表面的尺寸。 在金钛层上沉积大约1,000至5,000厚的锗层，并对其进行掩模和蚀刻，使其暴露玻璃基板的选定部分。 放置发光二极管颗粒，其N层的表面的周边部分与锗层重叠接触，并且N层表面的其余部分与衬底的选定部分对准。 然后将发光二极管在足以形成将颗粒粘合到钛上的金 - 锗合金的高温下压在锗层上几秒钟。

公开(公告)号：US3049214A

公开(公告)日：1962-08-14

申请号：US84150959

申请日：1959-09-22

Applicant: GEN ELECTRIC

Inventor： CORMIA KEITH C ,  AIRD ALANSON D

IPC: H01J9/46 ,  H01J19/46

CPC classification number: H01J9/46 ,  H01J19/46 ,  H01J2893/0007

公开(公告)号：US2985947A

公开(公告)日：1961-05-30

申请号：US71081958

申请日：1958-01-23

Applicant: GEN ELECTRIC

Inventor： AIRD ALANSON D ,  CRANE WILLIAM F

IPC: H01J19/46

CPC classification number: H01J19/46 ,  H01J2893/0006 ,  Y10T29/53265