公开(公告)号：US20150340742A1

公开(公告)日：2015-11-26

申请号：US14719742

申请日：2015-05-22

Applicant: General Electric Company

Inventor： Sundeep KUMAR ,  Mohamed RAHMANE ,  Hongbo CAO ,  Darren Michael STOHR ,  Raghavendra Rao ADHARAPURAPU ,  Ravikumar HANUMANTHA

IPC: H01M10/39 ,  H01M2/08

CPC classification number: H01M10/3963 ,  B23K35/3033 ,  B23K35/3046 ,  C04B37/026 ,  C04B2235/656 ,  C04B2235/6567 ,  C04B2235/6582 ,  C04B2237/122 ,  C04B2237/123 ,  C04B2237/126 ,  C04B2237/127 ,  C04B2237/128 ,  C04B2237/343 ,  C04B2237/405 ,  C04B2237/55 ,  C04B2237/597 ,  C04B2237/708 ,  C04B2237/72 ,  C04B2237/765 ,  C04B2237/80 ,  H01M2/08 ,  Y10T156/10 ,  Y10T428/12611

Abstract: A method for joining a metal component to a ceramic component is presented. The method includes disposing a metallic barrier layer on a metallized portion of the ceramic component, and joining the metal component to the metallized portion of the ceramic component through the metallic barrier layer. The metallic barrier layer comprises nickel and a melting point depressant. The metallic barrier layer is disposed by a screen printing process, followed by sintering the layer at a temperature less than about 1000 degrees Celsius. A sealing structure including a joint between a ceramic component and a metal component is also presented.

Abstract translation: 提出了一种将金属成分与陶瓷成分接合的方法。 该方法包括将金属阻挡层设置在陶瓷部件的金属化部分上，并通过金属阻挡层将金属部件连接到陶瓷部件的金属化部分。 金属阻挡层包括镍和熔点降低剂。 通过丝网印刷方法设置金属阻挡层，然后在小于约1000摄氏度的温度下烧结该层。 还提供了包括陶瓷部件和金属部件之间的接合部的密封结构。

公开(公告)号：US20180312751A1

公开(公告)日：2018-11-01

申请号：US15768562

申请日：2016-10-18

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Ravikumar HANUMANTHA ,  Prasanth Kumar NAMMALWAR ,  Digamber Gurudas POROB

IPC: C09K11/61

CPC classification number: C09K11/616

Abstract: A process for synthesizing a manganese doped phosphor of formula I: Ax [MFy]:Mn4+ is presented. The process includes contacting a first solution with a second solution and a third solution in the presence of a plurality of inert particles. The first solution and the second solution include a composition of formula II: Ax[MnFy]. The third solution includes a source of M, where A is Li, Na, K, Rb, Cs, or combinations thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or combinations thereof; x is an absolute value of a charge of the [MFy] ion; and y is 5, 6 or 7.