公开(公告)号：US08895211B2

公开(公告)日：2014-11-25

申请号：US13710498

申请日：2012-12-11

申请人： GLOBALFOUNDRIES, Inc.

发明人： Guoxiang Ning ,  Chunyu Wong ,  Paul Ackmann ,  Sarasvathi Thangaraju

IPC分类号： G03F1/26

CPC分类号： G03F7/20 ,  G03F1/28 ,  G03F1/42 ,  G03F1/50

摘要： A mask is disclosed which includes a plurality of first phase shift regions disposed on a first side of the mask, and a plurality of second phase shift regions disposed on a second side of the mask. The first phase shift regions and second phase shift regions may be alternating phase shift regions in which phase shift of the first phase shift regions is out of phase, for instance by 180 degrees, from phase shift of the second phase shift regions. A method for forming the mask, and a semiconductor device fabrication method using the mask is also disclosed.

摘要翻译： 公开了一种掩模，其包括设置在掩模的第一侧上的多个第一相移区域和设置在掩模的第二侧上的多个第二相移区域。 第一相移区域和第二相移区域可以是交变相移区域，其中第一相移区域的相移与第二相移区域的相移相异，例如180度。 还公开了一种形成掩模的方法和使用该掩模的半导体器件制造方法。

公开(公告)号：US09658531B2

公开(公告)日：2017-05-23

申请号：US14475967

申请日：2014-09-03

申请人： GLOBALFOUNDRIES, INC.

发明人： Guoxiang Ning ,  Chunyu Wong ,  Paul Ackmann ,  Sarasvathi Thangaraju

IPC分类号： G03F1/26 ,  G03F7/20 ,  G03F1/28 ,  G03F1/50 ,  G03F1/42

CPC分类号： G03F7/20 ,  G03F1/28 ,  G03F1/42 ,  G03F1/50

摘要： A mask is disclosed which includes a plurality of first phase shift regions disposed on a first side of the mask, and a plurality of second phase shift regions disposed on a second side of the mask. The first phase shift regions and second phase shift regions may be alternating phase shift regions in which phase shift of the first phase shift regions is out of phase, for instance by 180 degrees, from phase shift of the second phase shift regions. A method for forming the mask, and a semiconductor device fabrication method using the mask is also disclosed.