公开(公告)号：US20150364540A1

公开(公告)日：2015-12-17

申请号：US14837288

申请日：2015-08-27

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ki Young LEE ,  Sanggil BAE ,  Jae Ho JOUNG

IPC: H01L49/02 ,  H01L27/108

CPC classification number: H01L28/60 ,  H01L27/10805

Abstract: Capacitor and contact structures are provided, as well as methods for forming the capacitor and contact structures. The methods include, for instance, providing a layer of conductive material above a conductive structure and above a lower electrode of a capacitor; etching the layer of conductive material to define a conductive material hard mask and an upper electrode of the capacitor, the conductive material hard mask being disposed at least partially above the conductive structure; and forming a first conductive contact structure and a second conductive contact structure, the first conductive contact structure extending through an opening in the conductive material hard mask and conductively contacting the conductive structure, and the second conductive contact structure conductively contacting one of the lower electrode of the capacitor, or the upper electrode of the capacitor.

Abstract translation: 提供了电容器和接触结构，以及形成电容器和接触结构的方法。 所述方法包括例如在导电结构之上和电容器的下电极之上提供导电材料层; 蚀刻导电材料层以限定导电材料硬掩模和电容器的上电极，导电材料硬掩模至少部分地设置在导电结构之上; 以及形成第一导电接触结构和第二导电接触结构，所述第一导电接触结构延伸穿过所述导电材料硬掩模中的开口并导电地接触所述导电结构，并且所述第二导电接触结构导电地接触所述导电接触结构的下电极之一 电容器或电容器的上电极。

公开(公告)号：US20160336172A1

公开(公告)日：2016-11-17

申请号：US14712197

申请日：2015-05-14

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Linus JANG ,  Sanggil BAE ,  Daeyoup LEE

IPC: H01L21/027 ,  G03F7/09 ,  G03F7/11 ,  H01L21/033 ,  H01L29/06

CPC classification number: H01L21/0273 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11 ,  G03F7/40 ,  G03F7/42 ,  H01L21/0332 ,  H01L21/0337 ,  H01L22/12 ,  H01L22/20 ,  H01L29/0649 ,  H01L29/0692

Abstract: Lithography stack, intermediate semiconductor devices, and methods of fabrication are provided. The method includes obtaining an intermediate semiconductor device with a substrate, applying a spin on carbon layer over the substrate, and applying a hardmask layer over the spin on carbon layer. The intermediate semiconductor device includes a substrate, a spin on carbon layer over the substrate, and a hardmask layer over the spin on carbon layer. The lithography stack includes a spin on carbon layer, an invisible hardmask layer over the spin on carbon layer, and a photoresist layer over the invisible hardmask layer.

Abstract translation: 提供了平版印刷叠层，中间半导体器件和制造方法。 该方法包括获得具有衬底的中间半导体器件，在衬底上施加在碳层上的自旋，以及在碳层上的自旋上施加硬掩模层。 中间半导体器件包括衬底，在衬底上的自旋碳层，以及在碳层上的旋涂上的硬掩模层。 光刻堆叠包括在碳层上的自旋，在碳层上的自旋上的不可见的硬掩模层，以及在不可见的硬掩模层上的光致抗蚀剂层。

公开(公告)号：US20140098459A1

公开(公告)日：2014-04-10

申请号：US13648504

申请日：2012-10-10

Applicant: GLOBALFOUNDRIES, INC.

Inventor： Ki Young LEE ,  Sanggil BAE ,  Jae Ho JOUNG

IPC: H01G4/228

CPC classification number: H01L28/60 ,  H01L27/10805

Abstract: Capacitor and contact structures are provided, as well as methods for forming the capacitor and contact structures. The methods include, for instance, providing a layer of conductive material above a conductive structure and above a lower electrode of a capacitor; etching the layer of conductive material to define a conductive material hard mask and an upper electrode of the capacitor, the conductive material hard mask being disposed at least partially above the conductive structure; and forming a first conductive contact structure and a second conductive contact structure, the first conductive contact structure extending through an opening in the conductive material hard mask and conductively contacting the conductive structure, and the second conductive contact structure conductively contacting one of the lower electrode of the capacitor, or the upper electrode of the capacitor.

Abstract translation: 提供了电容器和接触结构，以及形成电容器和接触结构的方法。 所述方法包括例如在导电结构之上和电容器的下电极之上提供导电材料层; 蚀刻导电材料层以限定导电材料硬掩模和电容器的上电极，导电材料硬掩模至少部分地设置在导电结构之上; 以及形成第一导电接触结构和第二导电接触结构，所述第一导电接触结构延伸穿过所述导电材料硬掩模中的开口并导电地接触所述导电结构，并且所述第二导电接触结构导电地接触所述导电接触结构的下电极之一 电容器或电容器的上电极。