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公开(公告)号：US20190227427A1
公开(公告)日：2019-07-25
申请号：US15876540
申请日：2018-01-22
Applicant: GLOBALFOUNDRIES INC.
Inventor： Amr Y. Abdo , Lei Zhuang , Jed H. Rankin
Abstract: An extreme ultraviolet (EUV) mask including an absorber structure is disclosed. The absorber structure may include at least one slanted and/or concave sidewall. The absorber structure may include a sidewall including a step. A method of forming an absorber for an EUV mask is disclosed. The method may include etching an absorber layer using a mask to form an absorber structure having a sidewall wherein an outer edge of the top surface of the sidewall is closer to a central vertical axis of the absorber structure than an outer edge of the bottom surface of the sidewall. The method may include performing additional etching steps to form a step along the sidewall of the absorber structure. The etching may include combinations of anisotropic etching in different directions, and/or isotropic etching. The method may include etching an absorber layer including multiple absorber layers having different material properties on the ML reflector.
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Patent Agency Ranking
2.发明申请SAMPLE PLAN CREATION FOR OPTICAL PROXIMITY CORRECTION WITH MINIMAL NUMBER OF CLIPS 有权采用最小数量的光学近似校正的样本计划公开(公告)号：US20160246167A1
公开(公告)日：2016-08-25
申请号：US14628446
申请日：2015-02-23
Applicant: GLOBALFOUNDRIES INC.
Inventor： Amr Y. Abdo , Nathalie Casati , Maria Gabrani , James M. Oberschmidt , Ramya Viswanathan , Josef S. Watts
CPC classification number: G03F1/36 , G06F17/5081
Abstract: Methods, program products, and systems for improving optical proximity correction (OPC) calibration, and automatically determining a minimal number of clips, are disclosed. The method can include using a computing device to perform actions including: calculating a total relevancy score for a projected sample plan including a candidate clip, and wherein the relevancy score is derived from at least one relevancy criterion and a relevancy weight; calculating a relevancy score for the candidate clip, the relevancy score for the candidate clip being a contribution from the candidate clip to the total relevancy score; and adding the candidate clip to a sample plan for the IC layout and removing the candidate clip from the plurality of clips in response a difference in relevancy score between the projected sample plan and one or more previous sample plans substantially fitting a non-linear relevancy score function.
Abstract translation: 公开了用于改进光学邻近校正（OPC）校准以及自动确定最小数量的片段的方法，程序产品和系统。 该方法可以包括使用计算设备来执行动作，包括：计算包括候选剪辑的投影样本计划的总相关性得分，并且其中所述相关性得分来自至少一个相关性标准和相关权重; 计算候选剪辑的相关性分数，候选剪辑的相关性分数是从候选剪辑到总相关性分数的贡献; 以及将所述候选剪辑添加到所述IC布局的样本计划并从所述多个剪辑中移除所述候选剪辑，以响应所述预测样本计划与基本拟合非线性相关性得分的一个或多个先前样本计划之间的相关性得分的差异 功能。
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公开(公告)号：US10768521B2
公开(公告)日：2020-09-08
申请号：US15876540
申请日：2018-01-22
Applicant: GLOBALFOUNDRIES INC.
Inventor： Amr Y. Abdo , Lei Zhuang , Jed H. Rankin
Abstract: An extreme ultraviolet (EUV) mask including an absorber structure is disclosed. The absorber structure may include at least one slanted and/or concave sidewall. The absorber structure may include a sidewall including a step. A method of forming an absorber for an EUV mask is disclosed. The method may include etching an absorber layer using a mask to form an absorber structure having a sidewall wherein an outer edge of the top surface of the sidewall is closer to a central vertical axis of the absorber structure than an outer edge of the bottom surface of the sidewall. The method may include performing additional etching steps to form a step along the sidewall of the absorber structure. The etching may include combinations of anisotropic etching in different directions, and/or isotropic etching. The method may include etching an absorber layer including multiple absorber layers having different material properties on the ML reflector.
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4.发明授权公开(公告)号：US09904757B2
公开(公告)日：2018-02-27
申请号：US14985686
申请日：2015-12-31
Applicant: GLOBALFOUNDRIES INC.
Inventor： Amr Y. Abdo , Ioana Graur
IPC: G06F17/50
CPC classification number: G06F17/5081 , G06F17/5068
Abstract: A processor receives an integrated circuit design, divides the integrated circuit design into a test portion and a remaining portion, and adds sub-resolution assist features (SRAFs) having different size and spacing parameters to the test portion of the integrated circuit design to generate a single test pattern. Exposure and development equipment performs a single exposure and development process of the single test pattern to produce a single test photoresist. The processor analyzes the single test photoresist to determine which of the size and spacing parameters are unacceptable and which are acceptable, based on differences between the single test photoresist and a model photoresist that the test portion of the integrated circuit design without the SRAFs would produce. The processor adds SRAFs having the acceptable size and spacing parameters to the remaining portion of the integrated circuit design.
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5.发明申请公开(公告)号：US20170193150A1
公开(公告)日：2017-07-06
申请号：US14985686
申请日：2015-12-31
Applicant: GLOBALFOUNDRIES INC.
Inventor： Amr Y. Abdo , Ioana Graur
IPC: G06F17/50
CPC classification number: G06F17/5081 , G06F17/5068
Abstract: A processor receives an integrated circuit design, divides the integrated circuit design into a test portion and a remaining portion, and adds sub-resolution assist features (SRAFs) having different size and spacing parameters to the test portion of the integrated circuit design to generate a single test pattern. Exposure and development equipment performs a single exposure and development process of the single test pattern to produce a single test photoresist. The processor analyzes the single test photoresist to determine which of the size and spacing parameters are unacceptable and which are acceptable, based on differences between the single test photoresist and a model photoresist that the test portion of the integrated circuit design without the SRAFs would produce. The processor adds SRAFs having the acceptable size and spacing parameters to the remaining portion of the integrated circuit design.
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6.发明授权Sample plan creation for optical proximity correction with minimal number of clips 有权使用最少数量的剪辑进行光学邻近校正的示例计划创建公开(公告)号：US09405186B1
公开(公告)日：2016-08-02
申请号：US14628446
申请日：2015-02-23
Applicant: GLOBALFOUNDRIES INC.
Inventor： Amr Y. Abdo , Nathalie Casati , Maria Gabrani , James M. Oberschmidt , Ramya Viswanathan , Josef S. Watts
CPC classification number: G03F1/36 , G06F17/5081
Abstract: Methods, program products, and systems for improving optical proximity correction (OPC) calibration, and automatically determining a minimal number of clips, are disclosed. The method can include using a computing device to perform actions including: calculating a total relevancy score for a projected sample plan including a candidate clip, and wherein the relevancy score is derived from at least one relevancy criterion and a relevancy weight; calculating a relevancy score for the candidate clip, the relevancy score for the candidate clip being a contribution from the candidate clip to the total relevancy score; and adding the candidate clip to a sample plan for the IC layout and removing the candidate clip from the plurality of clips in response a difference in relevancy score between the projected sample plan and one or more previous sample plans substantially fitting a non-linear relevancy score function.
Abstract translation: 公开了用于改进光学邻近校正（OPC）校准以及自动确定最小数量的片段的方法，程序产品和系统。 该方法可以包括使用计算设备来执行动作，包括：计算包括候选剪辑的投影样本计划的总相关性得分，并且其中所述相关性得分来自至少一个相关性标准和相关权重; 计算候选剪辑的相关性分数，候选剪辑的相关性分数是从候选剪辑到总相关性分数的贡献; 以及将所述候选剪辑添加到所述IC布局的样本计划并从所述多个剪辑中移除所述候选剪辑，以响应所述预测样本计划与基本拟合非线性相关性得分的一个或多个先前样本计划之间的相关性得分的差异 功能。
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