公开(公告)号：US20190393221A1

公开(公告)日：2019-12-26

申请号：US16562481

申请日：2019-09-06

Applicant: GLOBALFOUNDRIES INC.

Inventor： Balaji KANNAN ,  Ayse M. OZBEK ,  Tao CHU ,  Bala HARAN ,  Vishal CHHABRA ,  Katsunori ONISHI ,  Guowei XU

IPC: H01L27/092 ,  H01L21/027 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/311 ,  H01L27/02 ,  H01L29/06

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a cut inside a replacement metal gate trench to mitigate n-p proximity effects and methods of manufacture. The structure described herein includes: a first device; a second device, adjacent to the first device; a dielectric material, of the first device and the second device, including a cut within a trench between the first device and the second device; and a common gate electrode shared with the first device and the second device, the common gate electrode provided over the dielectric material and contacting underlying material within the cut.

公开(公告)号：US20190115346A1

公开(公告)日：2019-04-18

申请号：US15783549

申请日：2017-10-13

Applicant: GLOBALFOUNDRIES INC.

Inventor： Balaji KANNAN ,  Ayse M. OZBEK ,  Tao CHU ,  Bala HARAN ,  Vishal CHHABRA ,  Katsunori ONISHI ,  Guowei XU

IPC: H01L27/092 ,  H01L29/06 ,  H01L27/02 ,  H01L21/311 ,  H01L21/027 ,  H01L29/66 ,  H01L21/8234

CPC classification number: H01L27/0924 ,  H01L21/0274 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823481 ,  H01L21/823828 ,  H01L21/823878 ,  H01L27/0207 ,  H01L27/1104 ,  H01L29/0649 ,  H01L29/517 ,  H01L29/66545

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a cut inside a replacement metal gate trench to mitigate n-p proximity effects and methods of manufacture. The structure described herein includes: a first device; a second device, adjacent to the first device; a dielectric material, of the first device and the second device, including a cut within a trench between the first device and the second device; and a common gate electrode shared with the first device and the second device, the common gate electrode provided over the dielectric material and contacting underlying material within the cut.