公开(公告)号：US20200066879A1

公开(公告)日：2020-02-27

申请号：US16108753

申请日：2018-08-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： Hui ZANG ,  Guowei XU

IPC: H01L29/66 ,  H01L21/8238 ,  H01L29/10 ,  H01L29/78 ,  H01L21/8234

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to replacement metal gate structures with reduced shorting and uniform chamfering, and methods of manufacture. The structure includes: a long channel device composed of a conductive gate material with a capping layer over the conductive gate material and extending to sides of the conductive gate material; and a short channel device composed of the conductive gate material and the capping layer over the conductive gate material.

公开(公告)号：US20200152749A1

公开(公告)日：2020-05-14

申请号：US16742981

申请日：2020-01-15

Applicant: GLOBALFOUNDRIES INC.

Inventor： Hui ZANG ,  Guowei XU ,  Keith TABAKMAN ,  Viraj SARDESAI

IPC: H01L29/417 ,  H01L27/088 ,  H01L21/768 ,  H01L21/311 ,  H01L21/28 ,  H01L29/66

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to middle of line structures and methods of manufacture. The structure includes: a plurality of gate structures comprising source and/or drain metallization features; spacers on sidewalls of the gate structures and composed of a first material and a second material; and contacts in electrical contact with the source and/or drain metallization features, and separated from the gate structures by the spacers.

公开(公告)号：US20190221650A1

公开(公告)日：2019-07-18

申请号：US15873565

申请日：2018-01-17

Applicant: GLOBALFOUNDRIES INC.

Inventor： Hui ZANG ,  Guowei XU ,  Keith TABAKMAN ,  Viraj SARDESAI

IPC: H01L29/417 ,  H01L21/768 ,  H01L21/311 ,  H01L27/088 ,  H01L21/28

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to middle of line structures and methods of manufacture. The structure includes: a plurality of gate structures comprising source and/or drain metallization features; spacers on sidewalls of the gate structures and composed of a first material and a second material; and contacts in electrical contact with the source and/or drain metallization features, and separated from the gate structures by the spacers.

公开(公告)号：US20200176444A1

公开(公告)日：2020-06-04

申请号：US16204506

申请日：2018-11-29

Applicant: GLOBALFOUNDRIES INC.

Inventor： Guowei XU ,  Hui ZANG ,  Ruilong XIE ,  Haiting WANG

IPC: H01L27/088 ,  H01L29/06 ,  H01L21/8234 ,  H01L29/66

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a single diffusion cut for gate structures and methods of manufacture. The structure includes: a plurality of fin structures composed of semiconductor material; a plurality of replacement gate structures extending over the plurality of fin structures; a plurality of diffusion regions adjacent to the each of the plurality of replacement gate structures; and a single diffusion break between the diffusion regions of the adjacent replacement gate structures, the single diffusion break being filled with an insulator material. In a first cross-sectional view, the single diffusion break extends into the semiconductor material and in a second cross-sectional view, the single diffusion break is devoid of semiconductor material of the plurality of fin structures.

公开(公告)号：US20190393221A1

公开(公告)日：2019-12-26

申请号：US16562481

申请日：2019-09-06

Applicant: GLOBALFOUNDRIES INC.

Inventor： Balaji KANNAN ,  Ayse M. OZBEK ,  Tao CHU ,  Bala HARAN ,  Vishal CHHABRA ,  Katsunori ONISHI ,  Guowei XU

IPC: H01L27/092 ,  H01L21/027 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/311 ,  H01L27/02 ,  H01L29/06

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a cut inside a replacement metal gate trench to mitigate n-p proximity effects and methods of manufacture. The structure described herein includes: a first device; a second device, adjacent to the first device; a dielectric material, of the first device and the second device, including a cut within a trench between the first device and the second device; and a common gate electrode shared with the first device and the second device, the common gate electrode provided over the dielectric material and contacting underlying material within the cut.

公开(公告)号：US20190164898A1

公开(公告)日：2019-05-30

申请号：US15823899

申请日：2017-11-28

Applicant: GLOBALFOUNDRIES INC.

Inventor： Hui ZANG ,  Guowei XU ,  Scott BEASOR ,  Ruilong Xie

IPC: H01L23/532 ,  H01L29/78 ,  H01L29/66 ,  H01L21/768 ,  H01L21/311

Abstract: In the manufacture of a FinFET device, an isolation architecture is provided between gate and source/drain contact locations. The isolation architecture may include a low-k spacer layer and a contact etch stop layer. An upper portion of the isolation architecture is removed and replaced with a high-k, etch-selective spacer layer adapted to resist degradation during an etch to open the source/drain contact locations. The high-k spacer layer, in conjunction with a self-aligned contact (SAC) capping layer disposed over the gate and overlapping a sidewall of the isolation layer, forms an improved isolation structure that inhibits short circuits or parasitic capacitance between the gate and source/drain contacts.

公开(公告)号：US20190115346A1

公开(公告)日：2019-04-18

申请号：US15783549

申请日：2017-10-13

Applicant: GLOBALFOUNDRIES INC.

Inventor： Balaji KANNAN ,  Ayse M. OZBEK ,  Tao CHU ,  Bala HARAN ,  Vishal CHHABRA ,  Katsunori ONISHI ,  Guowei XU

IPC: H01L27/092 ,  H01L29/06 ,  H01L27/02 ,  H01L21/311 ,  H01L21/027 ,  H01L29/66 ,  H01L21/8234

CPC classification number: H01L27/0924 ,  H01L21/0274 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823481 ,  H01L21/823828 ,  H01L21/823878 ,  H01L27/0207 ,  H01L27/1104 ,  H01L29/0649 ,  H01L29/517 ,  H01L29/66545

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a cut inside a replacement metal gate trench to mitigate n-p proximity effects and methods of manufacture. The structure described herein includes: a first device; a second device, adjacent to the first device; a dielectric material, of the first device and the second device, including a cut within a trench between the first device and the second device; and a common gate electrode shared with the first device and the second device, the common gate electrode provided over the dielectric material and contacting underlying material within the cut.