Antiferromagnetic storage device
    1.
    发明授权
    Antiferromagnetic storage device 有权
    反铁磁存储装置

    公开(公告)号:US09437269B2

    公开(公告)日:2016-09-06

    申请号:US15076992

    申请日:2016-03-22

    摘要: An antiferromagnetic nanostructure according to one embodiment includes an array of at least two antiferromagnetically coupled magnetic atoms having at least two magnetic states that are stable for at least one picosecond even in the absence of interaction with an external structure, the array having a net magnetic moment of zero or about zero, wherein the array has 100 atoms or less along a longest dimension thereof. An atomic-scale structure according to one embodiment has a net magnetic moment of zero or about zero; two or more stable magnetic states; and having an array of atoms that has magnetic moments that alternate between adjacent magnetic atoms along one or more directions. Such structures may be used to store data at ultra-high densities.

    摘要翻译: 根据一个实施方案的反铁磁性纳米结构包括具有至少两个具有至少两个磁状态的阵列,所述至少两个磁状态即使在与外部结构不相互作用的情况下,对于至少一皮秒是稳定的,该阵列具有净磁矩 为零或约零,其中该阵列沿其最长尺寸具有100个原子或更小。 根据一个实施例的原子尺度结构具有零或约零的净磁矩; 两个或多个稳定的磁状态; 并且具有具有沿着一个或多个方向在相邻磁性原子之间交替的磁矩的原子阵列。 这种结构可用于以超高密度存储数据。