公开(公告)号：US10685705B2

公开(公告)日：2020-06-16

申请号：US16047529

申请日：2018-07-27

Applicant: GLOBALFOUNDRIES INC.

Inventor： Faraz Khan ,  Norman W. Robson ,  Toshiaki Kirihata ,  Danny Moy ,  Darren L. Anand

IPC: G11C16/04 ,  G11C11/56 ,  H01L29/792 ,  H01L27/11573 ,  H01L29/73 ,  G11C16/10 ,  G11C16/14

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to program and erase memory structures and methods of manufacture. The semiconductor memory includes: a charge trap transistor; and a self-heating circuit which selectively applies voltages to terminals of the charge trap transistor to assist in erase operations of the charge trap transistor.