公开(公告)号：US09324890B2

公开(公告)日：2016-04-26

申请号：US14086513

申请日：2013-11-21

Applicant: GLOBALFOUNDRIES INC.

Inventor： David B. Mitzi ,  Wei Liu ,  Min Yuan

IPC: H01L31/18 ,  H01L31/032 ,  H01L31/0749

CPC classification number: H01L31/0324 ,  H01L31/0322 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

Abstract: The present invention provides a photovoltaic device, such as, a solar cell, having a substrate and an absorber layer disposed on the substrate. The absorber layer includes a doped or undoped composition represented by the formula: Cu1-yIn1-xGaxSe2-zSz wherein 0≦x≦1; 0≦y≦0.15 and 0≦z≦2; wherein the absorber layer is formed by a solution-based deposition process which includes the steps of contacting hydrazine and a source of Cu, a source of In, a source of Ga, a source of Se, and optionally a source of S, and further optionally a source of a dopant, under conditions sufficient to produce a homogeneous solution; coating the solution on the substrate to produce a coated substrate; and heating the coated substrate to produce the photovoltaic device. A photovoltaic device and a process for making same based on a hydrazinium-based chalcogenide precursor are also provided.

Abstract translation: 本发明提供了一种太阳能电池的光电器件，其具有衬底和设置在衬底上的吸收层。 吸收层包括由下式表示的掺杂或未掺杂的组合物：Cu1-yIn1-xGaxSe2-zSz，其中0＆nlE; x＆nlE; 1; 0＆nlE; y＆nlE; 0.15和0＆nlE; z＆nlE; 2; 其中所述吸收层是通过基于溶液的沉积工艺形成的，所述方法包括以下步骤：使肼和Cu源，In源，Ga源，Se源，以及任选的S源 任选的掺杂剂源，在足以产生均匀溶液的条件下; 将溶液涂布在基材上以产生涂布的基材; 并加热涂覆的基底以产生光伏器件。 还提供了一种光电器件及其基于肼基硫族化物前体制备方法。

公开(公告)号：US09716207B2

公开(公告)日：2017-07-25

申请号：US13948645

申请日：2013-07-23

Applicant: GLOBALFOUNDRIES INC.

Inventor： Keith E. Fogel ,  Jeehwan Kim ,  David B. Mitzi ,  Mark T. Winkler

IPC: H01L21/00 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/032 ,  H01L31/0749

CPC classification number: H01L31/1888 ,  H01L31/022483 ,  H01L31/02366 ,  H01L31/0326 ,  H01L31/0749 ,  Y02E10/541

Abstract: A method for forming a photovoltaic device includes forming a photovoltaic absorption stack on a substrate including one or more of I-III-VI2 and I2-II-IV-VI4 semiconductor material. A transparent conductive contact layer is deposited on the photovoltaic absorption stack at a temperature less than 200 degrees Celsius. The transparent conductive contact layer has a thickness of about one micron and is formed on a front light-receiving surface. The surface includes pyramidal structures due to an as deposited thickness. The transparent conductive contact layer is wet etched to further roughen the front light-receiving surface to reduce reflectance.