公开(公告)号：US09716207B2

公开(公告)日：2017-07-25

申请号：US13948645

申请日：2013-07-23

Applicant: GLOBALFOUNDRIES INC.

Inventor： Keith E. Fogel ,  Jeehwan Kim ,  David B. Mitzi ,  Mark T. Winkler

IPC: H01L21/00 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/032 ,  H01L31/0749

CPC classification number: H01L31/1888 ,  H01L31/022483 ,  H01L31/02366 ,  H01L31/0326 ,  H01L31/0749 ,  Y02E10/541

Abstract: A method for forming a photovoltaic device includes forming a photovoltaic absorption stack on a substrate including one or more of I-III-VI2 and I2-II-IV-VI4 semiconductor material. A transparent conductive contact layer is deposited on the photovoltaic absorption stack at a temperature less than 200 degrees Celsius. The transparent conductive contact layer has a thickness of about one micron and is formed on a front light-receiving surface. The surface includes pyramidal structures due to an as deposited thickness. The transparent conductive contact layer is wet etched to further roughen the front light-receiving surface to reduce reflectance.