Dynamic alignment by electrical potential and flow control to single-wall carbon nanotube field effect transistors
    1.
    发明授权
    Dynamic alignment by electrical potential and flow control to single-wall carbon nanotube field effect transistors 有权
    通过电势和流量控制对单壁碳纳米管场效应晶体管的动态对准

    公开(公告)号:US09236575B1

    公开(公告)日:2016-01-12

    申请号:US14478115

    申请日:2014-09-05

    Abstract: After forming a plurality of metal anchors arranged in a matrix of rows and columns and a plurality trenches separating adjacent rows of metal anchors on a substrate, a dispersion comprising charged single-wall carbon nanotubes (SWCNTs) having a surface binding group on each end of the charged SWCNTs is directed to flow through the plurality of trenches. During the flow process, one end of each of the charged SWCNTs binds to a corresponding metal anchor through a surface binding group. An electric field is then applied to align the charged SWCNTs parallel to lengthwise directions of the plurality of trenches such that another end of the each of the SWCNTs binds to an adjacent metal anchor through another surface binding group. The aligned charged SWCNTs can be used as conducting channels for field effect transistors (FETs).

    Abstract translation: 在形成布置成行和列的矩阵的多个金属锚定件和在衬底上分隔相邻的金属锚定排的多个沟槽之后,分散体包括在每个端部具有表面结合基团的带电荷的单壁碳纳米管(SWCNT) 带电的SWCNT被引导流过多个沟槽。 在流动过程中,每个带电的SWCNT的一端通过表面结合基团与相应的金属锚结合。 然后施加电场以使带电的SWCNT平行于多个沟槽的长度方向排列,使得每个SWCNT的另一端通过另一表面结合基团结合相邻的金属锚。 对准的带电SWCNT可用作场效应晶体管(FET)的导通通道。

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