公开(公告)号：US10593555B2

公开(公告)日：2020-03-17

申请号：US15925928

申请日：2018-03-20

Applicant: GLOBALFOUNDRIES INC.

Inventor： Qun Gao ,  Naved Siddiqui ,  Ankur Arya ,  John R Sporre

IPC: H01L21/311 ,  H01L29/66 ,  H01L21/768 ,  H01L21/033 ,  H01L21/762 ,  H01L21/3105

Abstract: The manufacture of a FinFET device includes the formation of a composite sacrificial gate. The composite sacrificial gate includes a sacrificial gate layer such as a layer of amorphous silicon, and an etch selective layer such as a layer of silicon germanium. The etch selective layer, which underlies the sacrificial gate layer, enables the formation of a gate cut opening having a controlled critical dimension that extends through the composite sacrificial gate.