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公开(公告)号:US20180158967A1
公开(公告)日:2018-06-07
申请号:US15886927
申请日:2018-02-02
Applicant: GLOBALFOUNDRIES INC.
Inventor: Juntao LI , Kangguo CHENG , Chengwen PEI , Geng WANG , Joseph ERVIN
CPC classification number: H01L31/02327 , G02B6/122 , G02B6/428 , G02B6/43 , G02B2006/12061 , G02B2006/12123 , H01L21/76898 , H01L23/481 , H01L31/02005
Abstract: The present disclosure relates to semiconductor structures and, more particularly, to electrical and optical via connections on a same chip and methods of manufacture. The structure includes an optical through substrate via (TSV) comprising an optical material filling the TSV. The structure further includes an electrical TSV which includes a liner of the optical material and a conductive material filling remaining portions of the electrical TSV.
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公开(公告)号:US20170365725A1
公开(公告)日:2017-12-21
申请号:US15187048
申请日:2016-06-20
Applicant: GLOBALFOUNDRIES INC.
Inventor: Juntao LI , Kangguo CHENG , Chengwen PEI , Geng WANG , Joseph ERVIN
CPC classification number: H01L31/02327 , G02B6/122 , G02B6/428 , G02B6/43 , G02B2006/12061 , G02B2006/12123 , H01L21/76898 , H01L23/481 , H01L31/02005
Abstract: The present disclosure relates to semiconductor structures and, more particularly, to electrical and optical via connections on a same chip and methods of manufacture. The structure includes an optical through substrate via (TSV) comprising an optical material filling the TSV. The structure further includes an electrical TSV which includes a liner of the optical material and a conductive material filling remaining portions of the electrical TSV.
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