公开(公告)号：US20200044034A1

公开(公告)日：2020-02-06

申请号：US16054033

申请日：2018-08-03

Applicant: GLOBALFOUNDRIES INC.

Inventor： Laertis Economikos ,  Kevin J. Ryan ,  Ruilong Xie ,  Hui Zang

IPC: H01L29/40 ,  H01L29/78 ,  H01L29/66 ,  H01L21/3213 ,  H01L29/45 ,  H01L29/06

Abstract: The disclosure relates to methods of forming integrated circuit (IC) structures with a metal cap on a cobalt layer for source and drain regions of a transistor. An integrated circuit (IC) structure according to the disclosure may include: a semiconductor fin on a substrate; a gate structure over the substrate, the gate structure having a first portion extending transversely across the semiconductor fin; an insulator cap positioned on the gate structure above the semiconductor fin; a cobalt (Co) layer on the semiconductor fin adjacent to the gate structure, wherein an upper surface of the Co layer is below an upper surface of the gate structure; and a metal cap on the Co layer.

公开(公告)号：US10790363B2

公开(公告)日：2020-09-29

申请号：US16054033

申请日：2018-08-03

Applicant: GLOBALFOUNDRIES INC.

Inventor： Laertis Economikos ,  Kevin J. Ryan ,  Ruilong Xie ,  Hui Zang

IPC: H01L29/40 ,  H01L29/78 ,  H01L29/06 ,  H01L21/3213 ,  H01L29/45 ,  H01L29/66

Abstract: The disclosure relates to methods of forming integrated circuit (IC) structures with a metal cap on a cobalt layer for source and drain regions of a transistor. An integrated circuit (IC) structure according to the disclosure may include: a semiconductor fin on a substrate; a gate structure over the substrate, the gate structure having a first portion extending transversely across the semiconductor fin; an insulator cap positioned on the gate structure above the semiconductor fin; a cobalt (Co) layer on the semiconductor fin adjacent to the gate structure, wherein an upper surface of the Co layer is below an upper surface of the gate structure; and a metal cap on the Co layer.

公开(公告)号：US10062560B1

公开(公告)日：2018-08-28

申请号：US15497647

申请日：2017-04-26

Applicant: GLOBALFOUNDRIES INC.

Inventor： Kevin J. Ryan ,  Shariq Siddiqui ,  Frank W. Mont ,  Cornelius B. Peethala

IPC: H01L21/44 ,  H01L21/02 ,  C25F1/00 ,  H01L21/768 ,  H01L21/027

CPC classification number: H01L21/76877 ,  C25F1/00 ,  H01L21/02063

Abstract: Aspects of the present disclosure provide a method of cleaning a semiconductor device. The method includes providing a semiconductor wafer having an exposed cobalt surface and rinsing the exposed cobalt surface with cathode water having a pH greater than 9 and an oxidation reduction potential of less than 0.0.