公开(公告)号：US10134585B2

公开(公告)日：2018-11-20

申请号：US14830131

申请日：2015-08-19

Applicant: The Regents of the University of California ,  GLOBALFOUNDRIES, Inc. ,  Applied Materials, Inc.

Inventor： Kasra Sardashti ,  Tobin Kaufman-Osborn ,  Tyler Kent ,  Andrew Kummel ,  Shariq Siddiqui ,  Bhagawan Sahu ,  Adam Brand ,  Naomi Yoshida

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/306 ,  H01L29/94

Abstract: Surface pretreatment of SiGe or Ge surfaces prior to gate oxide deposition cleans the SiGe or Ge surface to provide a hydrogen terminated surface or a sulfur passivated (or S—H) surface. Atomic layer deposition (ALD) of a high-dielectric-constant oxide at a low temperature is conducted in the range of 25-200° C. to form an oxide layer. Annealing is conducted at an elevated temperature. A method for oxide deposition on a damage sensitive III-V semiconductor surface conducts in-situ cleaning of the surface with cyclic pulsing of hydrogen and TMA (trimethyl aluminum) at a low temperature in the range of 100-200° C. Atomic layer deposition (ALD) of a high-dielectric-constant oxide forms an oxide layer. Annealing is conducted at an elevated temperature. The annealing can create a silicon terminated interfaces.

公开(公告)号：US20170301767A1

公开(公告)日：2017-10-19

申请号：US15641861

申请日：2017-07-05

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GLOBALFOUNDRIES INC.

Inventor： Hiroaki Niimi ,  Shariq Siddiqui ,  Tenko Yamashita

IPC: H01L29/45 ,  H01L21/02 ,  H01L29/08 ,  H01L27/092 ,  H01L21/768 ,  H01L21/3213 ,  H01L21/285 ,  H01L29/161 ,  H01L29/417

CPC classification number: H01L21/76843 ,  H01L21/02244 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/285 ,  H01L21/28512 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/32134 ,  H01L21/32136 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/7684 ,  H01L21/76846 ,  H01L21/7685 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76865 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76895 ,  H01L21/823814 ,  H01L21/823871 ,  H01L23/485 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/535 ,  H01L27/092 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/165 ,  H01L29/41725 ,  H01L29/41783 ,  H01L29/45 ,  H01L29/665 ,  H01L29/66628 ,  H01L29/7848

Abstract: An electrical device including a first semiconductor device having a silicon and germanium containing source and drain region, and a second semiconductor device having a silicon containing source and drain region. A first device contact to at least one of said silicon and germanium containing source and drain region of the first semiconductor device including a metal liner of an aluminum titanium and silicon alloy and a first tungsten fill. A second device contact is in contact with at least one of the silicon containing source and drain region of the second semiconductor device including a material stack of a titanium oxide layer and a titanium layer. The second device contact may further include a second tungsten fill.

公开(公告)号：US09508560B1

公开(公告)日：2016-11-29

申请号：US14743511

申请日：2015-06-18

Applicant: International Business Machines Corporation ,  GLOBALFOUNDRIES Inc. ,  STMicroelectronics, Inc.

Inventor： Yann Mignot ,  Brown C. Peethala ,  Shariq Siddiqui

IPC: H01L21/311 ,  H01L21/033 ,  H01L21/027

CPC classification number: H01L21/31116 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/3115 ,  H01L21/76816

Abstract: A method that allows effective removal of a silicon-containing antireflective coating (SiARC) layer in a block mask after defining an unblock area in a sidewall image transfer (SIT) patterning process without causing a height loss of the SIT spacers is provided. The method includes first modifying the SiARC layer with a dry etch utilizing an etching gas comprising a nitrogen gas followed by treating the modified SiARC layer with a wet chemical etch utilizing an aqueous solution including dilute hydrofluoric acid and citric acid.

Abstract translation: 提供一种在限制了侧壁图像转印（SIT）图案化工艺中的未封闭区域而不引起SIT间隔物的高度损失之前有效去除块掩模中的含硅抗反射涂层（SiARC）层的方法。 该方法包括首先利用包含氮气的蚀刻气体进行干法蚀刻来修饰SiARC层，然后利用包含稀氢氟酸和柠檬酸的水溶液进行湿化学蚀刻来处理改性的SiARC层。

公开(公告)号：US09373543B1

公开(公告)日：2016-06-21

申请号：US14876023

申请日：2015-10-06

Applicant: GLOBALFOUNDRIES Inc. ,  International Business Machines Corporation

Inventor： Frank W. Mont ,  Shariq Siddiqui ,  Douglas M. Trickett ,  Brown Cornelius Peethala

IPC: H01L21/4763 ,  H01L21/768 ,  H01L21/311

CPC classification number: H01L21/76808 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76816 ,  H01L21/76897

Abstract: A method includes forming a stack of materials including a first dielectric layer having a conductive feature positioned therein, and a second dielectric layer positioned above the first dielectric layer. An etch mask including a plurality of spaced apart mask elements is formed above the second dielectric layer. The mask elements define at least a first via opening exposing the second dielectric layer. A patterning layer is formed above the etch mask. A second via opening is formed in the patterning layer to expose the first via opening in the etch mask. The second dielectric layer is etched through the second via opening to define a third via opening in the second dielectric layer exposing the conductive feature. The patterning layer and the etch mask are removed. A conductive via contacting the conductive feature is formed in the third via opening.

Abstract translation: 一种方法包括形成包括其中定位有导电特征的第一介电层的材料堆叠和位于第一介电层上方的第二介电层。 包括多个间隔开的掩模元件的蚀刻掩模形成在第二介电层的上方。 掩模元件至少限定了暴露第二介电层的第一通孔。 在蚀刻掩模上方形成图形层。 在图案化层中形成第二通孔，以露出蚀刻掩模中的第一通孔。 通过第二通孔开口蚀刻第二电介质层，以在暴露导电特征的第二电介质层中限定第三通孔。 图案化层和蚀刻掩模被去除。 在第三通孔中形成有与导电特征接触的导电通路。

公开(公告)号：US20200083040A1

公开(公告)日：2020-03-12

申请号：US16123042

申请日：2018-09-06

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Frank W. Mont ,  Han You ,  Shariq Siddiqui ,  Brown C. Peethala

IPC: H01L21/02 ,  H01L21/285

Abstract: One illustrative method disclosed includes, among other things, forming a first dielectric layer and forming first and second conductive structures comprising cobalt embedded in the first dielectric layer. A second dielectric layer is formed above and contacting the first dielectric layer. The first and second dielectric layers comprise different materials, and a portion of the second dielectric layer comprises carbon or nitrogen. A first cap layer is formed above the first and second conductive structures and the second dielectric layer.

公开(公告)号：US10340146B2

公开(公告)日：2019-07-02

申请号：US15647495

申请日：2017-07-12

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Rohit Galatage ,  Shariq Siddiqui ,  Chung-Ju Yang

IPC: H01L21/00 ,  H01L21/28 ,  H01L21/02 ,  H01L21/311 ,  H01L29/51

Abstract: Structures for reliability caps used in the manufacture of a field-effect transistor and methods for forming reliability caps used in the manufacture of a field-effect transistor. A layer comprised of a metal silicon nitride is deposited on a high-k dielectric material. The high-k dielectric material is thermally processed in an oxygen-containing ambient environment with the layer arranged as a cap between the high-k dielectric material and the ambient environment. Due at least in part to its composition, the layer blocks transport of oxygen from the ambient environment to the high-k dielectric material.

公开(公告)号：US10211094B2

公开(公告)日：2019-02-19

申请号：US15641861

申请日：2017-07-05

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GLOBALFOUNDRIES INC.

Inventor： Hiroaki Niimi ,  Shariq Siddiqui ,  Tenko Yamashita

IPC: H01L21/02 ,  H01L21/285 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/8238 ,  H01L23/485 ,  H01L23/532 ,  H01L23/535 ,  H01L27/092 ,  H01L29/08 ,  H01L29/161 ,  H01L29/165 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L29/78

Abstract: An electrical device including a first semiconductor device having a silicon and germanium containing source and drain region, and a second semiconductor device having a silicon containing source and drain region. A first device contact to at least one of said silicon and germanium containing source and drain region of the first semiconductor device including a metal liner of an aluminum titanium and silicon alloy and a first tungsten fill. A second device contact is in contact with at least one of the silicon containing source and drain region of the second semiconductor device including a material stack of a titanium oxide layer and a titanium layer. The second device contact may further include a second tungsten fill.

公开(公告)号：US10170574B2

公开(公告)日：2019-01-01

申请号：US15792206

申请日：2017-10-24

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GLOBALFOUNDRIES INC.

Inventor： Hiroaki Niimi ,  Shariq Siddiqui ,  Tenko Yamashita

IPC: H01L21/8238 ,  H01L21/02 ,  H01L21/285 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/485 ,  H01L23/532 ,  H01L27/092 ,  H01L29/08 ,  H01L29/161 ,  H01L29/165 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L29/78 ,  H01L23/535

Abstract: An electrical device including a first semiconductor device having a silicon and germanium containing source and drain region, and a second semiconductor device having a silicon containing source and drain region. A first device contact to at least one of said silicon and germanium containing source and drain region of the first semiconductor device including a metal liner of an aluminum titanium and silicon alloy and a first tungsten fill. A second device contact is in contact with at least one of the silicon containing source and drain region of the second semiconductor device including a material stack of a titanium oxide layer and a titanium layer. The second device contact may further include a second tungsten fill.

公开(公告)号：US09799559B1

公开(公告)日：2017-10-24

申请号：US15158827

申请日：2016-05-19

Applicant: GLOBALFOUNDRIES Inc. ,  International Business Machines Corporation

Inventor： Shariq Siddiqui ,  Frank W. Mont ,  Xunyuan Zhang ,  Brown Peethala ,  Douglas M. Trickett

IPC: H01L21/768 ,  H01L21/44 ,  H01L21/311 ,  H01L21/302 ,  H01L21/475 ,  H01L21/469 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L21/7688 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76883 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53219 ,  H01L23/53223 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53257 ,  H01L23/53266

Abstract: A method includes, for example, providing an intermediate semiconductor structure comprising a metallic layer, a patternable layer disposed over the metallic layer, and a hard mask disposed over the patternable layer, the intermediate semiconductor structure comprising a plurality of vias extending through the hard mask onto the metallic layer, depositing a sacrificial barrier layer over the intermediate semiconductor structure and in the plurality of vias, removing a portion of the sacrificial barrier layer between the plurality of vias while maintaining a portion of the sacrificial barrier layer in the plurality of vias, forming a trench in the patternable layer between the removed portion of the sacrificial barrier layer and the plurality of vias, and removing the remaining portions of the sacrificial barrier layer from the plurality of vias.

公开(公告)号：US20160372334A1

公开(公告)日：2016-12-22

申请号：US14743511

申请日：2015-06-18

Applicant: International Business Machines Corporation ,  GLOBALFOUNDRIES Inc. ,  STMicroelectronics, Inc.

Inventor： Yann Mignot ,  Brown C. Peethala ,  Shariq Siddiqui

IPC: H01L21/311 ,  H01L21/027 ,  H01L21/033

CPC classification number: H01L21/31116 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/3115 ,  H01L21/76816

Abstract: A method that allows effective removal of a silicon-containing antireflective coating (SiARC) layer in a block mask after defining an unblock area in a sidewall image transfer (SIT) patterning process without causing a height loss of the SIT spacers is provided. The method includes first modifying the SiARC layer with a dry etch utilizing an etching gas comprising a nitrogen gas followed by treating the modified SiARC layer with a wet chemical etch utilizing an aqueous solution including dilute hydrofluoric acid and citric acid.

Abstract translation: 提供一种在限制了侧壁图像转印（SIT）图案化工艺中的未封闭区域而不引起SIT间隔物的高度损失之前有效去除块掩模中的含硅抗反射涂层（SiARC）层的方法。 该方法包括首先利用包含氮气的蚀刻气体进行干法蚀刻来修饰SiARC层，然后利用包含稀氢氟酸和柠檬酸的水溶液进行湿化学蚀刻来处理改性的SiARC层。