公开(公告)号：US10594356B1

公开(公告)日：2020-03-17

申请号：US16526778

申请日：2019-07-30

Applicant: GLOBALFOUNDRIES INC.

Inventor： Saquib Bin Halim ,  Md Sayed Kaysar Bin Rahim ,  Marcel Wieland

IPC: H04B1/38 ,  H04B1/40 ,  H01L23/66 ,  H01L21/56 ,  H01L23/48 ,  H01L23/31 ,  H01L23/552 ,  H01L21/768

Abstract: A semiconductor device comprising an on-mold antenna for transmitting and/or receiving a millimeter-wave radio frequency signal is provided. The semiconductor device includes a semiconductor layer; a polymer layer proximal to the semiconductor layer; a mold proximal to the polymer layer; a plurality of nodes proximal to the semiconductor layer and distal to the polymer layer; an antenna disposed on the mold; and a conductive element providing electrical communication between the antenna and a first node. The mold may be from 500 μm to 1000 μm thick, such as from 750 μm to 800 μm thick, such as about 775 μm.

公开(公告)号：US10923397B2

公开(公告)日：2021-02-16

申请号：US16203619

申请日：2018-11-29

Applicant: GLOBALFOUNDRIES INC.

Inventor： Mohamed A. Rabie ,  Md Sayed Kaysar Bin Rahim

IPC: H01L21/768 ,  H01L21/311 ,  H01L23/00 ,  H01L23/48

Abstract: A semiconductor device is provided that includes a substrate, an integrated circuit with a conductive member and a through-substrate-via (TSV) structure. The substrate includes a front surface and a back surface that is opposite the front surface. The integrated circuit with the conductive member is formed over the front surface of the substrate. The TSV structure having vertical sidewalls is formed in the back surface of the substrate connecting with the conductive member. The TSV structure includes a tapered first insulation layer, a conformal conductive layer and a second insulation layer, with the conformal conductive layer positioned between the first and second insulation layers. The conformal conductive layer is electrically connected to the conductive member.

公开(公告)号：US10712499B2

公开(公告)日：2020-07-14

申请号：US16202037

申请日：2018-11-27

Applicant: GLOBALFOUNDRIES INC.

Inventor： Selaka Bandara Bulumulla ,  Md Sayed Kaysar Bin Rahim ,  Tanya Andreeva Atanasova

IPC: G02B6/12 ,  H01L23/00 ,  G02B6/122 ,  H01L23/522 ,  H01L23/64 ,  H01L49/02 ,  G02B6/13

Abstract: The present disclosure relates to packaging of integrated circuit chips for semiconductor devices. More particularly, the present disclosure relates to packaging of multiple chips for silicon photonics devices. The present disclosure provides a semiconductor device including a photonic integrated circuit (PIC) chip, an inductor positioned over the PIC chip, and a transimpedance amplifier (TIA) chip positioned over the PIC chip. The inductor has a first terminal end and a second terminal end, and the first terminal end is connected to the PIC chip.