公开(公告)号：US10411752B1

公开(公告)日：2019-09-10

申请号：US16174145

申请日：2018-10-29

Applicant: GLOBALFOUNDRIES INC.

Inventor： Saquib Bin Halim ,  MD Sayed Kaysar Bin Rahim ,  Marcel Wieland

IPC: H04B1/38 ,  H04B1/40 ,  H01L23/31 ,  H01L23/48 ,  H01L23/552 ,  H01L21/56 ,  H01L21/768 ,  H01L23/66

Abstract: A semiconductor device comprising an on-mold antenna for transmitting and/or receiving a millimeter-wave radio frequency signal is provided. The semiconductor device includes a semiconductor layer; a polymer layer proximal to the semiconductor layer; a mold proximal to the polymer layer; a plurality of nodes proximal to the semiconductor layer and distal to the polymer layer; an antenna disposed on the mold; and a conductive element providing electrical communication between the antenna and a first node. The mold may be from 500 μm to 1000 μm thick, such as from 750 μm to 800 μm thick, such as about 775 μm.

公开(公告)号：US10594356B1

公开(公告)日：2020-03-17

申请号：US16526778

申请日：2019-07-30

Applicant: GLOBALFOUNDRIES INC.

Inventor： Saquib Bin Halim ,  Md Sayed Kaysar Bin Rahim ,  Marcel Wieland

IPC: H04B1/38 ,  H04B1/40 ,  H01L23/66 ,  H01L21/56 ,  H01L23/48 ,  H01L23/31 ,  H01L23/552 ,  H01L21/768

Abstract: A semiconductor device comprising an on-mold antenna for transmitting and/or receiving a millimeter-wave radio frequency signal is provided. The semiconductor device includes a semiconductor layer; a polymer layer proximal to the semiconductor layer; a mold proximal to the polymer layer; a plurality of nodes proximal to the semiconductor layer and distal to the polymer layer; an antenna disposed on the mold; and a conductive element providing electrical communication between the antenna and a first node. The mold may be from 500 μm to 1000 μm thick, such as from 750 μm to 800 μm thick, such as about 775 μm.

公开(公告)号：US20200075513A1

公开(公告)日：2020-03-05

申请号：US16118791

申请日：2018-08-31

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Marcel Wieland ,  Christian Goetze

IPC: H01L23/66 ,  H01L23/498 ,  H01L23/00

Abstract: RF semiconductor chips may be packaged on wafer level on the basis of a two-step process for providing a package material, thereby providing very short electrical connections between antenna structures formed in the package material and the semiconductor chip. In some illustrative embodiments, the antenna structures may be provided above the semiconductor chip, which results in a very space-efficient overall configuration.

公开(公告)号：US10580745B1

公开(公告)日：2020-03-03

申请号：US16118791

申请日：2018-08-31

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Marcel Wieland ,  Christian Goetze

IPC: H01L21/00 ,  H01L23/66 ,  H01L23/498 ,  H01L23/00

Abstract: RF semiconductor chips may be packaged on wafer level on the basis of a two-step process for providing a package material, thereby providing very short electrical connections between antenna structures formed in the package material and the semiconductor chip. In some illustrative embodiments, the antenna structures may be provided above the semiconductor chip, which results in a very space-efficient overall configuration.

公开(公告)号：US09136234B2

公开(公告)日：2015-09-15

申请号：US13937361

申请日：2013-07-09

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Matthias Lehr ,  Marcel Wieland ,  Martin O'Toole

IPC: H01L23/48 ,  H01L23/00

CPC classification number: H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05624 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/13021 ,  H01L2224/1308 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/351 ,  H01L2924/01202 ,  H01L2924/00

Abstract: When forming sophisticated semiconductor devices including metal pillars arranged on contact pads, which may comprise aluminum, device performance and reliability may be improved by avoiding exposure of the contact pad material to the ambient atmosphere, in particular during and between dicing and packaging processes. To this end, the contact pad material may be covered by a protection layer or may be protected by the metal pillars itself, thereby concurrently improving mechanical stress distribution in the device.

Abstract translation: 当形成复杂的半导体器件时，包括布置在可包括铝的接触焊盘上的金属柱，可以通过避免将接触垫材料暴露于环境大气中，特别是在切割和封装过程期间以及在切割和包装过程之间，从而提高器件的性能和可靠性。 为此，接触垫材料可以被保护层覆盖，或者可以被金属支柱本身保护，从而同时改善装置中的机械应力分布。

公开(公告)号：US20150014843A1

公开(公告)日：2015-01-15

申请号：US13937361

申请日：2013-07-09

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Matthias Lehr ,  Marcel Wieland ,  Martin O'Toole

IPC: H01L23/00

CPC classification number: H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05624 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/13021 ,  H01L2224/1308 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/351 ,  H01L2924/01202 ,  H01L2924/00

Abstract: When forming sophisticated semiconductor devices including metal pillars arranged on contact pads, which may comprise aluminum, device performance and reliability may be improved by avoiding exposure of the contact pad material to the ambient atmosphere, in particular during and between dicing and packaging processes. To this end, the contact pad material may be covered by a protection layer or may be protected by the metal pillars itself, thereby concurrently improving mechanical stress distribution in the device.

Abstract translation: 当形成复杂的半导体器件时，包括布置在可包括铝的接触焊盘上的金属柱，可以通过避免将接触垫材料暴露于环境大气中，特别是在切割和封装过程期间以及在切割和包装过程之间，从而提高器件的性能和可靠性。 为此，接触垫材料可以被保护层覆盖，或者可以被金属支柱本身保护，从而同时改善装置中的机械应力分布。