公开(公告)号：US09691658B1

公开(公告)日：2017-06-27

申请号：US15159186

申请日：2016-05-19

Applicant: GLOBALFOUNDRIES INC.

Inventor： Emre Alptekin ,  Raghu Mangu ,  Cung D. Tran ,  Domingo A. Ferrer

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/3213 ,  H01L21/311

CPC classification number: H01L21/76865 ,  H01L21/31138 ,  H01L21/32139 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/485 ,  H01L23/53266

Abstract: A method of forming an electrical contact in an integrated circuit, and an integrated circuit are disclosed. In an embodiment, the integrated circuit comprises a substrate, an insulating layer, and a metal layer. An opening is formed through the insulating layer to expose an active area of the substrate. The metal layer forms a cusp at a top end of the opening, narrowing this end of the opening. In embodiments, the method comprises depositing a conductive layer in the opening to form a liner, applying a filler material inside the opening to protect a portion of the liner, removing the cusp to widen the top of the opening while the filler material protects the portion of the liner covered by this material, removing the filler material from the opening, re-lining the opening, and filling the opening with a conductive material to form a contact through the insulating layer.