公开(公告)号：US20200161236A1

公开(公告)日：2020-05-21

申请号：US16197646

申请日：2018-11-21

Applicant: GLOBALFOUNDRIES INC.

Inventor： Il Goo KIM ,  Roderick A. AUGUR

IPC: H01L23/522 ,  H01L27/22 ,  H01L27/24 ,  H01L21/768

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to top electrode interconnect structures and methods of manufacture. The structure includes: a lower metallization feature; an upper metallization feature; a bottom electrode in direct contact with the lower metallization feature; one or more switching materials over the bottom electrode; a top electrode over the one or more switching materials; and a self-aligned via interconnection in contact with the top electrode and the upper metallization feature.

公开(公告)号：US20180151504A1

公开(公告)日：2018-05-31

申请号：US15875212

申请日：2018-01-19

Applicant: GLOBALFOUNDRIES INC.

Inventor： Xunyuan ZHANG ,  Roderick A. AUGUR ,  Hoon KIM

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/528 ,  H01L23/522

CPC classification number: H01L21/7682 ,  H01L21/76883 ,  H01L21/76885 ,  H01L21/76897 ,  H01L23/5221 ,  H01L23/53242 ,  H01L23/53295

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to self-aligned interconnect structures and methods of manufacture. The structure includes an interconnect structure which is self-aligned with an upper level via metallization, and both the interconnect structure and the upper level via metallization are composed of a Pt group material.