公开(公告)号：US20160049327A1

公开(公告)日：2016-02-18

申请号：US14459444

申请日：2014-08-14

Applicant: GLOBALFOUNDRIES INC.

Inventor： Sunil Kumar SINGH ,  Ravi Prakash SRIVASTAVA ,  Teck Jung TANG ,  Mark Alexander ZALESKI

IPC: H01L21/768

CPC classification number: H01L21/76814 ,  H01L21/3105 ,  H01L21/31144 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76825 ,  H01L2221/1047

Abstract: Methods are provided for fabricating an interlayer structure useful in, for instance, providing BEOL interconnect for circuit structures. The method includes, for instance, providing an interlayer structure, including: providing an uncured insulating layer above a substrate structure; forming an energy removal film over the uncured insulated layer; forming at least one opening through the energy removal film and extending at least partially into the uncured insulating layer; and applying energy to cure the uncured insulating layer, establishing a cured insulating layer, and decomposing in part the energy removal film, establishing a reduced thickness, energy removal film over the cured insulating layer, the interlayer structure including the cured insulating layer, and the applying energy decreasing an aspect ratio(s) of the one opening(s). In one implementation, the uncured insulating layer includes porogens which also decompose partially during applying energy to further improve the aspect ratio(s).

Abstract translation: 提供了用于制造用于例如为电路结构提供BEOL互连的层间结构的方法。 该方法包括例如提供层间结构，包括：在衬底结构之上提供未固化的绝缘层; 在未固化的绝缘层上形成能量去除膜; 通过所述能量去除膜形成至少一个开口并且至少部分地延伸到所述未固化的绝缘层中; 并施加能量以固化未固化绝缘层，建立固化绝缘层，并部分分解能量去除膜，在固化绝缘层上形成厚度减小的能量去除膜，包括固化绝缘层的层间结构，以及 施加减小一个开口的纵横比的能量。 在一个实施方案中，未固化的绝缘层包括在施加能量的同时分解部分以进一步改善纵横比的致孔剂。

公开(公告)号：US20150076705A1

公开(公告)日：2015-03-19

申请号：US14027479

申请日：2013-09-16

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Sunil Kumar SINGH ,  Matthew HERRICK ,  Teck Jung TANG ,  Dewei XU

IPC: H01L23/48 ,  H01L21/768 ,  H01L21/48

CPC classification number: H01L23/5226 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76835 ,  H01L21/76849 ,  H01L21/76877 ,  H01L23/481 ,  H01L23/5222 ,  H01L23/528 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Interlayer fabrication methods and interlayer structure are provided having reduced dielectric constants. The methods include, for example: providing a first uncured insulating layer with an evaporable material; and disposing a second uncured insulating layer having porogens above the first uncured insulating layer. The interlayer structure includes both the first and second insulating layers, and the methods further include curing the interlayer structure, leaving air gaps in the first insulating layer, and pores in the second insulating layer, where the air gaps are larger than the pores, and where the air gaps and pores reduce the dielectric constant of the interlayer structure.