公开(公告)号：US09825041B1

公开(公告)日：2017-11-21

申请号：US15236608

申请日：2016-08-15

Applicant: GLOBALFOUNDRIES INC.

Inventor： William L. Nicoll ,  Byeong Y. Kim

IPC: H01L27/108 ,  H01L27/12 ,  H01L29/792 ,  H01L29/78 ,  H01L29/51 ,  H01L21/311

CPC classification number: H01L27/10826 ,  H01L27/10879 ,  H01L27/10891 ,  H01L27/1211 ,  H01L29/785

Abstract: Various embodiments include methods and integrated circuit (IC) structures. In some cases, an IC can include: a substrate; a deep trench within the substrate; a buried oxide (BOX) layer adjacent the deep trench; a first fin structure over the deep trench; a second fin structure over the BOX layer; an ONO layer over the first fin structure; and a gate electrode contacting the ONO layer.

公开(公告)号：US09607993B1

公开(公告)日：2017-03-28

申请号：US15007937

申请日：2016-01-27

Applicant: GLOBALFOUNDRIES INC.

Inventor： Byeong Y. Kim ,  William L. Nicoll

IPC: H01L29/94 ,  H01L27/108

CPC classification number: H01L27/10867 ,  H01L27/10826 ,  H01L27/10829 ,  H01L27/10879 ,  H01L27/1211 ,  H01L29/66795 ,  H01L29/945

Abstract: Capacitor strap connections for a memory cell and device structures for making such capacitor strap connections. A deep trench capacitor is formed in a substrate. A collar comprised of an electrical insulator is formed at least partially inside an upper section of a deep trench in which the deep trench capacitor is formed. A portion of the collar is removed to define a notch extending through the collar, and a connection strap is formed in the notch. A fin is formed from a portion of the substrate, and is coupled by the connection strap with an electrode of the deep trench capacitor that is located inside the deep trench.