公开(公告)号：US10446665B2

公开(公告)日：2019-10-15

申请号：US15904982

申请日：2018-02-26

Applicant: GLOBALFOUNDRIES INC.

Inventor： Xiuyu Cai ,  Ying Hao Hsieh

IPC: H01L27/092 ,  H01L29/78 ,  H01L29/51 ,  H01L29/66 ,  H01L21/8238 ,  H01L21/8234 ,  H01L29/165

Abstract: Embodiments of the present invention provide methods and structures for protecting gates during epitaxial growth. An inner spacer of a first material is deposited adjacent a transistor gate. An outer spacer of a different material is deposited adjacent the inner spacer. Stressor cavities are formed adjacent the transistor gate. The inner spacer is recessed, forming a divot. The divot is filled with a material to protect the transistor gate. The stressor cavities are then filled. As the gate is safely protected, unwanted epitaxial growth (“mouse ears”) on the transistor gate is prevented.

公开(公告)号：US09941388B2

公开(公告)日：2018-04-10

申请号：US14309096

申请日：2014-06-19

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Xiuyu Cai ,  Ying Hao Hsieh

IPC: H01L21/336 ,  H01L29/66 ,  H01L29/78 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/165

CPC classification number: H01L29/6656 ,  H01L21/823814 ,  H01L21/823864 ,  H01L27/092 ,  H01L29/165 ,  H01L29/6653 ,  H01L29/66636 ,  H01L29/7848

Abstract: Embodiments of the present invention provide methods and structures for protecting gates during epitaxial growth. An inner spacer of a first material is deposited adjacent a transistor gate. An outer spacer of a different material is deposited adjacent the inner spacer. Stressor cavities are formed adjacent the transistor gate. The inner spacer is recessed, forming a divot. The divot is filled with a material to protect the transistor gate. The stressor cavities are then filled. As the gate is safely protected, unwanted epitaxial growth (“mouse ears”) on the transistor gate is prevented.

公开(公告)号：US20180190787A1

公开(公告)日：2018-07-05

申请号：US15904982

申请日：2018-02-26

Applicant: GLOBALFOUNDRIES INC.

Inventor： Xiuyu Cai ,  Ying Hao Hsieh

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/165

CPC classification number: H01L29/6656 ,  H01L21/823418 ,  H01L21/823468 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823864 ,  H01L27/092 ,  H01L29/165 ,  H01L29/6653 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848

Abstract: Embodiments of the present invention provide methods and structures for protecting gates during epitaxial growth. An inner spacer of a first material is deposited adjacent a transistor gate. An outer spacer of a different material is deposited adjacent the inner spacer. Stressor cavities are formed adjacent the transistor gate. The inner spacer is recessed, forming a divot. The divot is filled with a material to protect the transistor gate. The stressor cavities are then filled. As the gate is safely protected, unwanted epitaxial growth (“mouse ears”) on the transistor gate is prevented.

公开(公告)号：US20150372108A1

公开(公告)日：2015-12-24

申请号：US14309096

申请日：2014-06-19

Applicant: GlobalFoundries Inc.

Inventor： Xiuyu Cai ,  Ying Hao Hsieh

IPC: H01L29/66 ,  H01L27/092 ,  H01L29/51 ,  H01L29/78 ,  H01L29/49

CPC classification number: H01L29/6656 ,  H01L21/823814 ,  H01L21/823864 ,  H01L27/092 ,  H01L29/165 ,  H01L29/6653 ,  H01L29/66636 ,  H01L29/7848

Abstract: Embodiments of the present invention provide methods and structures for protecting gates during epitaxial growth. An inner spacer of a first material is deposited adjacent a transistor gate. An outer spacer of a different material is deposited adjacent the inner spacer. Stressor cavities are formed adjacent the transistor gate. The inner spacer is recessed, forming a divot. The divot is filled with a material to protect the transistor gate. The stressor cavities are then filled. As the gate is safely protected, unwanted epitaxial growth (“mouse ears”) on the transistor gate is prevented.

Abstract translation: 本发明的实施例提供了用于在外延生长期间保护栅极的方法和结构。 第一材料的内部间隔物沉积在晶体管栅极附近。 不同材料的外部间隔物邻近内部间隔物沉积。 在晶体管栅极附近形成应力腔。 内部间隔件凹入，形成一个凹槽。 该divot充满了材料，以保护晶体管门。 然后填充压力腔。 当门被安全地保护时，防止晶体管栅极上的不期望的外延生长（“鼠标耳”）。