公开(公告)号：US10276442B1

公开(公告)日：2019-04-30

申请号：US15993017

申请日：2018-05-30

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ruilong Xie ,  Julien Frougier ,  Kangguo Cheng ,  Adra Carr ,  Nicolas Loubet

IPC: H01L29/76 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/8238 ,  H01L29/423 ,  H01L29/786

Abstract: Structures for a field-effect transistor and methods of forming structures for a field-effect transistor. A first field-effect transistor has a first source/drain region, and a second field-effect transistor has a second source/drain region. A first silicide layer is arranged to wrap around the first source/drain region, and a second silicide layer is arranged to wrap around the second source/drain region. The first silicide layer contains a first metal, and the second silicide layer contains a second metal different from the first metal.