公开(公告)号：US10056381B2

公开(公告)日：2018-08-21

申请号：US15259268

申请日：2016-09-08

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ryan Sporer ,  Amy Child ,  George Mulfinger

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/10 ,  H01L21/225 ,  H01L21/308 ,  H01L21/324 ,  H01L29/167

CPC classification number: H01L27/0924 ,  H01L21/2256 ,  H01L21/308 ,  H01L21/324 ,  H01L21/823821 ,  H01L29/1083 ,  H01L29/167

Abstract: Device structures for a FinFET and fabrication methods for making a device structure for a FinFET. A first layer containing a first dopant is formed on a first region of a substrate. A second layer containing a second dopant is formed on a second region of the substrate. A first plurality of fins are formed and are each located in a respective trench extending from the substrate through the first layer. A second plurality of fins are formed and are each located in a respective trench extending from the substrate through the second layer. The first dopant is transferred from the first layer to a first section in each of the first plurality of fins and the second dopant is transferred from the second layer to a first section in each of the second plurality of fins.

公开(公告)号：US20180069005A1

公开(公告)日：2018-03-08

申请号：US15259268

申请日：2016-09-08

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ryan Sporer ,  Amy Child ,  George Mulfinger

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/10 ,  H01L21/225 ,  H01L21/308 ,  H01L21/324 ,  H01L29/167

CPC classification number: H01L27/0924 ,  H01L21/2256 ,  H01L21/308 ,  H01L21/324 ,  H01L21/823821 ,  H01L29/1083 ,  H01L29/167

Abstract: Device structures for a FinFET and fabrication methods for making a device structure for a FinFET. A first layer containing a first dopant is formed on a first region of a substrate. A second layer containing a second dopant is formed on a second region of the substrate. A first plurality of fins are formed and are each located in a respective trench extending from the substrate through the first layer. A second plurality of fins are formed and are each located in a respective trench extending from the substrate through the second layer. The first dopant is transferred from the first layer to a first section in each of the first plurality of fins and the second dopant is transferred from the second layer to a first section in each of the second plurality of fins.