公开(公告)号：US09704746B1

公开(公告)日：2017-07-11

申请号：US15235892

申请日：2016-08-12

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jiehui Shu ,  Jinping Liu ,  Archana Subramaniyan

IPC: H01L21/768 ,  H01L21/311 ,  H01L21/027 ,  H01L21/02

CPC classification number: H01L21/76802 ,  H01L21/0337 ,  H01L21/31144

Abstract: A method of forming a metallization layer by ASAP is provided. Embodiments include forming an ULK layer; forming a SAC SiN layer over the ULK layer; forming mandrels directly on the SAC SiN layer; cutting the mandrels; selectively etching the SAC SiN layer across the cut mandrels, forming first trenches; filling the first trenches with a metal oxide; forming a conformal metal oxide layer over the cut mandrels, the metal oxide, and the SAC SiN layer; removing horizontal portions of the conformal metal oxide layer over the cut mandrels and the SAC SiN layer; removing the cut mandrels; removing exposed portions of the SAC SiN layer and etching the underlying ULK layer, forming second trenches; and stripping a remainder of the metal oxide, conformal metal oxide layer, and SAC SiN layer.